An apparatus for processing a specimen with two or more particle beams, wherein the specimen has a milled side that is processed by a first particle beam and observed by a second particle beam. The specimen is milled during a first milling operation by the first particle beam with the specimen in a first position. Thereafter, the specimen tilts in a second position around an axis of tilt of the specimen. Thereafter, the specimen is milled during a second milling operation. Milling can be performed during continuous tilting of the specimen around the axis of tilt. The axis of tilt of the specimen intersects the milled side. In all the aforementioned positions of the specimen, the second particle beam impinges on the milled side, which enables monitoring of the milling in real time.

A method for detecting a discharge site for a charged particle beam emitting apparatus includes switchable first and second modes. The first mode enables a beam of charged particles to be deflected by applying voltages to electrodes. The second mode enables acquisition of data items indicative of potential of each of the electrodes while the beam is being emitted without applying the voltages. The method includes, in the second mode, detecting an occurrence of a discharge when a fluctuation in potential indicated by data items relating to one of the electrodes exceeds a predetermined threshold value; and detecting a site corresponding to the electrode, as a site having an occurrence of the discharge.

A method of milling a sample that includes a first layer formed over a second layer, where the first and second layers are different materials, the method comprising: milling the region of the sample by scanning a focused ion beam over the region a plurality of iterations in which, for each iteration, the focused ion beam removes material from the sample generating byproducts from the milled region; detecting, during the milling, the partial pressures of one or more byproducts with a residual gas analyzer positioned to have a direct line of sight to the milled region; generating, in real-time, an output detection signal from the residual gas analyzer indicative of an amount of the one or more byproducts detected; and stopping the milling based on the output signal.

This invention pertains to an imaging method, the purpose of which is to reveal, over a wide range, information about a plurality of layers contained in a multilayer structure, or form an image of the revealed applicable layers. The method proposed includes: a step in which, while rotating the sample with the axis of the normal line of the sample surface as the axis of rotation, the sample is irradiated with an ion beam from a direction inclined with respect to the normal line direction, via a mask having an opening which selectively allows the passage of an ion beam and which is disposed at a position distant from the sample, thereby forming a hole with a band-shaped sloped surface that is inclined with respect to the sample surface; and a step in which a first image viewed from a direction intersecting with the sloped surface of the applicable layer is formed, on the basis of a signal obtained by irradiating, with a charged particle beam, the applicable layer contained in the band-shaped sloped surface.

A specimen machining device for machining a specimen by irradiating the specimen with an ion beam includes an ion source for irradiating the specimen with the ion beam, a shielding member disposed on the specimen to block the ion beam, a specimen stage for holding the specimen, a camera for photographing the specimen, a coaxial illumination device for irradiating the specimen with illumination light along an optical axis of the camera, and a processing unit for determining whether to terminate the machining based on an image photographed by the camera. The processing unit performs processing for acquiring information indicating a target machined width, processing for acquiring the image, processing for measuring a machined width on the acquired image, and processing for terminating the machining when the measured machined width equals or exceeds the target machined width.

A method for positioning a movable object in a sample chamber of a particle beam microscope is carried out with the aid of a flexible particle beam barrier. The particle beam microscope comprises at least one particle beam column for producing a beam of charged particles, and a sample chamber, a detector for detecting interaction signals and a control and evaluation unit. In the method, initially an object is provided in the sample chamber. Next, a barrier region is defined, which is subsequently scanned with the beam of charged particles. The interaction signals produced during the scan are detected. The object is moved towards the barrier region, wherein the detected interaction signals are monitored and signal changes are registered, with the result that it is possible to detect when the object moves into the barrier region or leaves the barrier region.

A method to compensate for drift while controlling a charged particle beam (CPB) system having at least one charged particle beam controllable in position. Sources of drift include mechanical variations in the stage supporting the sample, beam deflection shifts, and environmental impacts, such as temperature. The method includes positioning a sample supported by a stage in the CPB system, monitoring a reference fiducial on a surface of the sample from a start time to an end time, determining a drift compensation to compensate for a drift that causes an unintended change in the position of a first charged particle beam relative to the sample by a known amount over a period of time based on a change in the position of the reference fiducial between the start time and the end time, and adjusting positions of the first charged particle beam by applying the determined drift compensation during an operation of the CPB system.

The invention relates to a method for processing an object using a material processing device that has a particle beam apparatus. The method comprises the following steps: determining a region of interest of the object on or in a first material region of the object, ablating material from a second material region adjoining the first material region by means of an ablation device, recognizing a geometric shape of the first material region, the geometric shape having a center, ablating material from a second portion of the first material region adjoining a first portion by means of a particle beam, the first portion having a first subregion and a second subregion, the region of interest being arranged in the first subregion, recognizing a further geometric shape of the first material region, the further geometric shape having a further center at a second position, relative positioning of the object such that the first position corresponds to the second position, and ablating material from the second subregion by means of the particle beam.

The focused ion beam apparatus includes: an electron beam column; a focused ion beam column; a sample stage; a coordinate acquisition unit configured to acquire, when a plurality of irradiation positions to which the focused ion beam is to be applied are designated on a sample, plane coordinates of each of the irradiation positions; a movement amount calculation unit configured to calculate, based on the plane coordinates, a movement amount by which the sample stage is to be moved to a eucentric height so that the eucentric height matches an intersection position at which the electron beam and the focused ion beam match each other at each of the irradiation positions; and a sample stage movement control unit configured to move, based on the movement amount, the sample stage to the eucentric height at each of the irradiation positions.

A method of evaluating a region of a sample that includes two or more sub-regions adjacent to each other that have different milling rates. The method can include: scanning a focused ion beam over the region during a single scan frame such that the ion beam is scanned over a first sub-region of the region having a first milling rate at a first scan rate and then scanned over a second sub-region of the region having a second milling rate at a second scan rate, where the second milling rate is faster than the first milling rate and second scan rate is faster than the first scan rate; and repeating the scanning process a plurality of times to etch the region to a desired depth.