There is provided an ion milling apparatus that can enhance reproducibility of ion distribution.

The ion milling apparatus includes an ion source 101, a sample stage 102 on which a sample processed by radiating a non-convergent ion beam from the ion source 101 is placed, a drive unit 107 that moves a measurement member holding section 106 holding an ion beam current measurement member 105 along a track located between the ion source and the sample stage, and an electrode 112 that is disposed near the track, in which a predetermined positive voltage is applied to the electrode 112, the ion beam current measurement member 105 is moved within a radiation range of the ion beam by the drive unit 107, in a state in which the ion beam is output from the ion source 101 under a first radiation condition, and an ion beam current that flows when the ion beam is radiated to the ion beam current measurement member 105 is measured.

There is provided an ion milling apparatus that can enhance reproducibility of ion distribution.

The ion milling apparatus includes an ion source 101, a sample stage 102 on which a sample processed by radiating a non-convergent ion beam from the ion source 101 is placed, a drive unit 107 that moves a measurement member holding section 106 holding an ion beam current measurement member 105 along a track located between the ion source and the sample stage, and an electrode 112 that is disposed near the track, in which a predetermined positive voltage is applied to the electrode 112, the ion beam current measurement member 105 is moved within a radiation range of the ion beam by the drive unit 107, in a state in which the ion beam is output from the ion source 101 under a first radiation condition, and an ion beam current that flows when the ion beam is radiated to the ion beam current measurement member 105 is measured.

A manufacturing system performs a deposition of an etch-compatible film over a substrate. The etch-compatible film includes a first surface and a second surface opposite to the first surface. The manufacturing system performs a partial removal of the etch-compatible film to create a surface profile on the first surface with a plurality of depths relative to the substrate. The manufacturing system performs a deposition of a second material over the profile created in the etch-compatible film. The manufacturing system performs a planarization of the second material to obtain a plurality of etch heights of the second material in accordance with the plurality of depths in the profile created in the etch-compatible film. The manufacturing system performs a lithographic patterning of a photoresist deposited over the planarized second material to obtain the plurality of etch heights and one or more duty cycles in the second material.

Exemplary semiconductor processing systems may include a remote plasma source. The remote plasma source may include a first plasma block segment defining an inlet to an internal channel of the first plasma block segment. The first plasma block segment may also define a cooling channel between the internal channel of the first plasma block segment and a first exterior surface of the first plasma block segment. The remote plasma source may include a second plasma block segment defining an outlet from an internal channel of the second plasma block segment. The second plasma block segment may also define a cooling channel between the internal channel of the second plasma block segment and a first exterior surface of the second plasma block segment. The systems may include a semiconductor processing chamber defining an inlet fluidly coupled with the outlet from the remote plasma source.

Methods of introducing a small molecule into a crystal of a macromolecule, of obtaining a microcrystal having a macromolecule and a small molecule from a crystal of the macromolecule, of determining a structural model for a complex having a macromolecule and a small molecule, of identifying a small molecule that complexes with a macromolecule, and of screening a library of small molecules for their binding to a macromolecule are disclosed.

Methods of introducing a small molecule into a crystal of a macromolecule, of obtaining a microcrystal having a macromolecule and a small molecule from a crystal of the macromolecule, of determining a structural model for a complex having a macromolecule and a small molecule, of identifying a small molecule that complexes with a macromolecule, and of screening a library of small molecules for their binding to a macromolecule are disclosed.

An FIB system includes an ion source for producing the ion beam, a lens system which includes an objective lens and which is operative to focus the ion beam onto a sample such that secondary electrons are produced from the sample, a detector for detecting the secondary electrons, and a controller for controlling the lens system. The controller operates i) to provide control so that a focus of the ion beam is varied by directing the ion beam onto the sample, ii) to measure a signal intensity from the secondary electrons produced from the sample during the variation of the strength of the objective lens, iii) to adjust the focus of the ion beam, iv) to acquire a secondary electron image containing an image of a trace of a spot, and v) to correct the deviation of the field of view of the ion beam.

An FIB system includes an ion source for producing the ion beam, a lens system which includes an objective lens and which is operative to focus the ion beam onto a sample such that secondary electrons are produced from the sample, a detector for detecting the secondary electrons, and a controller for controlling the lens system. The controller operates i) to provide control so that a focus of the ion beam is varied by directing the ion beam onto the sample, ii) to measure a signal intensity from the secondary electrons produced from the sample during the variation of the strength of the objective lens, iii) to adjust the focus of the ion beam, iv) to acquire a secondary electron image containing an image of a trace of a spot, and v) to correct the deviation of the field of view of the ion beam.

An apparatus and method for depositing a carbon layer includes an arc discharge is formed between an electron source and an evaporation material by means of a first power supply device. The negative terminal of the first power supply device is connected in an electrically conducting manner to the electron source and the positive terminal of the first power supply device is connected in an electrically conducting manner to the evaporation material. A permanent magnet system and a solenoid coil are arranged in a rotationally symmetrical manner around the evaporation material. The evaporation material is formed as a graphite rod which is surrounded by at least one heat-insulating element at least on the rod end to be evaporated of the graphite rod.

A beam control method is provided that can be implemented with any hardware system for imaging and/or cutting such as SEM/FIB/HIM or charged particle lithography which alleviates the deposited energy overlap between pixels to increase resolution and precision while reducing damage. The method includes scanning a workpiece with e-beam lithography, proton lithography, ion beam lithography, optical lithography, ion beam imaging or FIB in a reduced or sub-sampled pattern, to reduce beam overlap, which can include the step of scanning the beam ensuring that there is the largest difference in time and space between consecutive beam locations.