An ion implantation system includes an ion implanter containing an ion source unit and a dopant source gas supply system. The system includes a dopant source gas storage tank inside a gas box container located remotely to the ion implanter and a dopant source gas supply pipe configured to supply a dopant source gas from the dopant source gas storage tank to the ion source unit. The dopant source gas supply pipe includes an inner pipe, an outer pipe enclosing the inner pipe, a first pipe adaptor coupled to first end of respective inner and outer pipes, and a second pipe adaptor coupled to seconds end of respective inner and outer pipes opposite the first end. The first pipe adaptor connects the inner pipe to the dopant source gas storage tank and the second pipe adaptor connects the inner pipe to the ion source unit.

A charged particle buncher includes a series of spaced apart electrodes arranged to generate a shaped electric field. The series includes a first electrode, a last electrode and one or more intermediate electrodes. The charged particle buncher includes a waveform device attached to the electrodes and configured to apply a periodic potential waveform to each electrode independently in a manner so as to form a quasi-electrostatic time varying potential gradient between adjacent electrodes and to cause spatial distribution of charged particles that form a plurality of nodes and antinodes. The nodes have a charged particle density and the antinodes have substantially no charged particle density, and the nodes and the antinodes are formed from a charged particle beam configured to hit the target.

This invention pertains to an imaging method, the purpose of which is to reveal, over a wide range, information about a plurality of layers contained in a multilayer structure, or form an image of the revealed applicable layers. The method proposed includes: a step in which, while rotating the sample with the axis of the normal line of the sample surface as the axis of rotation, the sample is irradiated with an ion beam from a direction inclined with respect to the normal line direction, via a mask having an opening which selectively allows the passage of an ion beam and which is disposed at a position distant from the sample, thereby forming a hole with a band-shaped sloped surface that is inclined with respect to the sample surface; and a step in which a first image viewed from a direction intersecting with the sloped surface of the applicable layer is formed, on the basis of a signal obtained by irradiating, with a charged particle beam, the applicable layer contained in the band-shaped sloped surface.

This invention pertains to an imaging method, the purpose of which is to reveal, over a wide range, information about a plurality of layers contained in a multilayer structure, or form an image of the revealed applicable layers. The method proposed includes: a step in which, while rotating the sample with the axis of the normal line of the sample surface as the axis of rotation, the sample is irradiated with an ion beam from a direction inclined with respect to the normal line direction, via a mask having an opening which selectively allows the passage of an ion beam and which is disposed at a position distant from the sample, thereby forming a hole with a band-shaped sloped surface that is inclined with respect to the sample surface; and a step in which a first image viewed from a direction intersecting with the sloped surface of the applicable layer is formed, on the basis of a signal obtained by irradiating, with a charged particle beam, the applicable layer contained in the band-shaped sloped surface.

Embodiments of the disclosure generally relate to methods of forming gratings. The method includes depositing a resist material on a grating material disposed over a substrate, patterning the resist material into a resist layer, projecting a first ion beam to the first device area to form a first plurality of gratings, and projecting a second ion beam to the second device area to form a second plurality of gratings. Using a patterned resist layer allows for projecting an ion beam over a large area, which is often easier than focusing the ion beam in a specific area.

A scanning system includes a scanning chamber; a first rotary drive disposed in the scanning chamber and configured to rotate around a first axis; a second rotary drive disposed in the scanning chamber and configured to rotate around the first axis synchronously with the first rotary drive; and a bar-and-hinge system disposed in the scanning chamber and mechanically coupled to a substrate holder, the hinge system configured to translate a rotary motion of the first rotary drive and the second rotary drive to a planar motion of the substrate holder.

A method for making a semiconductor memory device comprising a plurality of memory cells for storing one or more data values, the method comprising: exposing a pattern on a wafer for creating structures for a plurality of memory cells for the semiconductor memory device, wherein the pattern is exposed by means of one or more charged particle beams; and varying an exposure dose of the one or more charged particle beams during exposure of the pattern to generate a set of one or more non-common features in one or more structures of at least one of the memory cells, so that the structures of the at least one memory cell differ from the corresponding structures of other memory cells of the semiconductor memory device.

The present disclosure provides an ion implantation method and an ion implanter for realizing the ion implantation method. The above-mentioned ion implantation method comprises: providing a spot-shaped ion beam current implanted into the wafer; controlling the wafer to move back and forth in a first direction; controlling the spot-shaped ion beam current to scan back and forth in a second direction perpendicular to the first direction; and adjusting the scanning width of the spot-shaped ion beam current in the second direction according to the width of the portion of the wafer currently scanned by the spot-shaped ion beam current in the second direction. According to the ion implantation method provided by the present disclosure, the scanning path of the ion beam current is adjusted by changing the scanning width of the ion beam current, so that the beam scanning area is attached to the wafer, which greatly reduces the waste of the ion beam current, improves the effective ion beam current and increases productivity without increasing actual ion beam current.

Systems and methods of sample preparation using dual ion beam trenching are described. In an example, an inside of a semiconductor package is non-destructively imaged to determine a region of interest (ROI). A mask is positioned over the semiconductor package, and a mask window is aligned with the ROI. A first ion beam and a second ion beam are swept, simultaneously or sequentially, along an edge of the mask window to trench the semiconductor package and to expose the ROI for analysis.

Systems and methods of sample preparation using dual ion beam trenching are described. In an example, an inside of a semiconductor package is non-destructively imaged to determine a region of interest (ROI). A mask is positioned over the semiconductor package, and a mask window is aligned with the ROI. A first ion beam and a second ion beam are swept, simultaneously or sequentially, along an edge of the mask window to trench the semiconductor package and to expose the ROI for analysis.