The disclosed embodiments relate to a charged particle source module for generating and emitting a charged particle beam, such as an electron beam, comprising: a frame including a first frame part, a second frame part, and one or more rigid support members which are arranged between said first frame part and said second frame part; a charged particle source arrangement for generating a charged particle beam, such as an electron beam, wherein said charged particle source arrangement, such as an electron source, is arranged at said second frame part; and a power connecting assembly arranged at said first frame part, wherein said charged particle source arrangement is electrically connected to said connecting assembly via electrical wiring.

A method for irradiating a target with a beam of energetic electrically charged particles, wherein the target comprises an exposure region where an exposure by said beam is to be performed, and the exposure of a desired pattern is done employing a multitude of exposure positions on the target. Each exposure position represents the location of one of a multitude of exposure spots of uniform size and shape, with each exposure spot covering at least one pattern pixel of the desired pattern. The exposure positions are located within a number of mutually separate cluster areas which are defined at respective fixed locations on the target. In each cluster area the exposure position are within a given neighboring distance to a next neighboring exposure position, while the cluster areas are separated from each other by spaces free of exposure positions, which space has a width, which is at least the double of the neighboring distance.

A charged particle beam drawing device includes: a storage unit that stores a pattern generation program for generating pattern data, the pattern generation program being a program in which an instruction for specifying a type of a figure and an instruction for specifying a regular arrangement of the figure are described; an execution unit that executes the pattern generation program stored in the storage unit; and a control unit that performs drawing control based on the pattern data generated by the executed pattern generation program.

The present invention discloses an ion beam lithography method based on an ion beam lithography system. The ion beam lithography system includes a roll-roll printer placed in a vacuum, and a medium-high-energy wide-range ion source, a medium-low-energy wide-range ion source and a low-energy ion source installed on the roll-roll printer. The ion beam lithography method includes: first coating a polyimide (PI) substrate with a dry film, etching the dry film according to a preset circuit pattern, then using the ion beam lithography system to deposit a wide-energy-range metal ion on the circuit pattern to form a film substrate, and finally stripping the dry film off the film substrate to obtain a printed circuit board (PCB).

A method for making a semiconductor memory device comprising a plurality of memory cells for storing one or more data values, the method comprising: exposing a pattern on a wafer for creating structures for a plurality of memory cells for the semiconductor memory device, wherein the pattern is exposed by means of one or more charged particle beams; and varying an exposure dose of the one or more charged particle beams during exposure of the pattern to generate a set of one or more non-common features in one or more structures of at least one of the memory cells, so that the structures of the at least one memory cell differ from the corresponding structures of other memory cells of the semiconductor memory device.

A method for making a semiconductor memory device comprising a plurality of memory cells for storing one or more data values, the method comprising; exposing a pattern on a wafer for creating structures for a plurality of memory cells for the semiconductor memory device, wherein the pattern is exposed by means of one or more charged particle beams; and varying an exposure dose of the one or more charged particle beams during exposure of the pattern to generate a set of one or more non-common features in one or more structures of at least one of the memory cells, so that the structures of the at least one memory cell differ from the corresponding structures of other memory cells of the semiconductor memory device.

A collimated electron beam is illuminated to a grounded metal mask such that patterns on the mask can be transferred to a substrate identically. In a preferred embodiment, a linear electron source can be provided for enhancing lithographic throughput. The metal mask is adjacent to the substrate, but does not contact with substrate.

Systems, devices, and methods for performing a non-contact electrical measurement (NCEM) on a NCEM-enabled cell included in a NCEM-enabled cell vehicle may be configured to perform NCEMs while the NCEM-enabled cell vehicle is moving. The movement may be due to vibrations in the system and/or movement of a movable stage on which the NCEM-enabled cell vehicle is positioned. Position information for an electron beam column producing the electron beam performing the NCEMs and/or for the moving stage may be used to align the electron beam with targets on the NCEM-enabled cell vehicle while it is moving.

A method for forming reliefs on the surface of a substrate, including a first implantation of ions in the substrate according to a first direction; a second implantation of ions in the substrate according to a second direction that is different from the first direction; at least one of the first and second implantations is carried out through at least one mask having at least one pattern; an etching of areas of the substrate having received by implantation a dose greater than or equal to a threshold, selectively to the areas of the substrate that have not received via implantation a dose greater than said threshold; the parameters of the first and second implantations being adjusted in such a way that only areas of the substrate that have been implanted both during the first implantation and during the second implantation receive a dose greater than or equal to said threshold.

Methods for fracturing or mask data preparation are disclosed in which a set of single-beam charged particle beam shots is input; a calculated image is calculated using a neural network, from the set of single-beam charged particle beam shots; and a set of multi-beam shots is generated based on the calculated image, to convert the set of single-beam charged particle beam shots to the set of multi-beam shots which will produce a surface image on the surface. Methods for training a neural network include inputting a set of single-beam charged particle beam shots; calculating a set of calculated images using the set of single-beam charged particle beam shots; and training the neural network with the set of calculated images.