A multi-beam pattern definition device for use in a particle-beam processing or inspection apparatus, which is irradiated with a beam of electrically charged particles and allows passage of the beam through a plurality of apertures to form corresponding beamlets, comprises an aperture array device in which said apertures are realized according to several sets of apertures arranged in respective aperture arrangements, and an absorber array device having a plurality of openings configured for the passage of at least a subset of beamlets that are formed by the apertures. The absorber array device comprises a plurality of openings corresponding to one of the aperture arrangements of the aperture array device, whereas it includes a charged-particle absorbing structure comprising absorbing regions surrounded by elevated regions and configured to absorb charged particles impinging thereupon at locations corresponding to apertures of the other aperture arrangements of the aperture array device, effectively confining the effects of irradiated particles and electric charge therein.

In one embodiment, a data generation method includes generating a plurality of parametric elements by dividing, at positions of an extremum and an inflection point, a parametric curve that expresses a shape of a writing pattern and is defined by a plurality of control points arranged in order in a predetermined direction, generating a polygon by extracting, for each of the parametric elements, one or some of the plurality of control points and connecting the extracted control points in order in the predetermined direction, calculating a coverage by the polygon in each of a plurality of rectangular segmented regions obtained by dividing a target to be irradiated with a charged particle beam into a predetermined size, and calculating a coverage of each segmented region in a peripheral part of the writing pattern by finding intersections of each of the plurality of parametric elements and four sides of each of the plurality of segmented regions.

Lithographic apparatuses suitable for complementary e-beam lithography (CEBL) are described. In an example, a method of forming a pattern for a semiconductor structure includes forming a pattern of parallel lines above a substrate. The method also includes aligning the substrate in an e-beam tool to provide the pattern of parallel lines parallel with a scan direction of the e-beam tool. The e-beam tool includes a column having a blanker aperture array (BAA) with a staggered pair of columns of openings along an array direction orthogonal to the scan direction. The method also includes forming a pattern of cuts or vias in or above the pattern of parallel lines to provide line breaks for the pattern of parallel lines by scanning the substrate along the scan direction. A cumulative current through the column has a non-zero and substantially uniform cumulative current value throughout the scanning.

A multi-beam charged particle inspection system and a method of operating a multi-beam charged particle inspection system for wafer inspection can provide high throughput with high resolution and high reliability. The method and the multi-beam charged particle beam inspection system can be configured to extract from a plurality of sensor data a set of control signals to control the multi-beam charged particle beam inspection system and thereby maintain the imaging specifications including a movement of a wafer stage during the wafer inspection task.

The disclosure relates to charged-particle multi-beam columns and multi-beam column arrays. In one arrangement, a sub-beam defining aperture array forms sub-beams from a beam of charged particles. A collimator array collimates the sub-beams An objective lens array projects the collimated sub-beams onto a sample. A detector detects charged particles emitted from the sample. Each collimator is directly adjacent to one of the objective lenses. The detector is provided in a plane down-beam from the sub-beam defining aperture array.

A detector substrate (or detector array) for use in a charged particle multi-beam assessment tool to detect charged particles from a sample. The detector substrate defines an array of apertures for beam paths of respective charged particle beams of a multi-beam. The detector substrate includes a sensor unit array. A sensor unit of the sensor unit array is adjacent to a corresponding aperture of the aperture array. The sensor unit is configured to capture charged particles from the sample. The detector array may include an amplification circuit associated with each sensor unit in the sensor unit array and proximate to the corresponding aperture in the aperture array. The amplification circuit may include a Trans Impedance Amplifier and/or an analogue to digital converter.

The present invention quickly calculates values of optimal excitation parameters which are set in lenses in multiple stages. A multi charged particle beam adjustment method includes forming a multi charged particle beam, calculating, for each of lenses in two or more stages disposed corresponding to object lenses in two or more stages, a first rate of change and a second rate of change in response to change in at least an excitation parameter, the first rate of change being a rate of change in a demagnification level of a beam image of the multi charged particle beam, the second rate of change being a rate of change in a rotation level of the beam image, and calculating a first amount of correction to the excitation parameter of each of the lenses based on an amount of correction to the demagnification level and the rotation level of the beam image, the first rate of change, and the second rate of change.

A method for irradiating a target with a beam of energetic electrically charged particles, wherein the target comprises an exposure region where an exposure by said beam is to be performed, and the exposure of a desired pattern is done employing a multitude of exposure positions on the target. Each exposure position represents the location of one of a multitude of exposure spots of uniform size and shape, with each exposure spot covering at least one pattern pixel of the desired pattern. The exposure positions are located within a number of mutually separate cluster areas which are defined at respective fixed locations on the target. In each cluster area the exposure position are within a given neighboring distance to a next neighboring exposure position, while the cluster areas are separated from each other by spaces free of exposure positions, which space has a width, which is at least the double of the neighboring distance.

A scanning electron microscopy (SEM) system is disclosed. The SEM system includes an electron source configured to generate an electron beam and a set of electron optics configured to scan the electron beam across the sample and focus electrons scattered by the sample onto one or more imaging planes. The SEM system includes a first detector module positioned at the one or more imaging planes, wherein the first detector module includes a multipixel solid-state sensor configured to convert scattered particles, such as electrons and/or x-rays, from the sample into a set of equivalent signal charges. The multipixel solid-state sensor is connected to two or more Application Specific Integrated Circuits (ASICs) configured to process the set of signal charges from one or more pixels of the sensor.

The disclosure relates to an electron-optical module of an electron-optical apparatus. The electron-optical module comprises a vacuum chamber, a high voltage shielding arrangement located within the vacuum chamber, and an aperture array configured to form a plurality of beamlets from an electron beam and located within the high voltage shielding arrangement. Wherein the electron-optical module can be configured to be removable from the electron-optical apparatus.