Patent classifications
H01J37/32018
Solution Glow Discharge Plasma Chamber with Ventilation
A plasma chamber for containing a solution electrode glow discharge (SEGD) apparatus, the plasma chamber comprising a hollow body and a ventilation unit. The hollow body is configured to enclose a plasma generated between a solid electrode and a solution electrode, the hollow body comprising an inlet opening, an outlet opening, and at least one viewing port for letting light generated from the plasma leave the hollow body. The ventilation unit is configured to move air from outside the hollow body into the inlet, through a portion of the hollow body located between the viewing port and a gap between the solid electrode and the solution electrode, and out of hollow body from the outlet, thereby creating an air curtain for removal from an optical path between the plasma and the viewing port of at least some vapor created by vaporization of liquid in the plasma.
Symmetric VHF source for a plasma reactor
The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.
Method and apparatus for the thermal treatment of a substrate
In an apparatus for thermal treatment of substrates, a gas discharge lamp runs in a simmer mode in standby operation. A constant power supply may be connected to the gas discharge lamp via a first switch. At least one charged capacitor may be connected to the gas discharge lamp via a second switch. A thermal treatment of the end side of a substrate with a duration of between 20 milliseconds and 500 milliseconds is provided in a manner governed by light absorption. This time window is advantageous for thermal treatment of coatings having a thickness of 2 to 200 micrometers, wherein the temperature of the rear side of the substrate can remain below that of the end side. The temperature on the end side can be significantly increased by the gas discharge lamp being connected to the capacitor via the second switch at the end of the time window.
Plasma processing apparatus and techniques
An apparatus may include a main chamber, a substrate holder, disposed in a lower region of the main chamber, and defining a substrate region, as well as an RF applicator, disposed adjacent an upper region of the main chamber, to generate an upper plasma within the upper region. The apparatus may further include a central chamber structure, disposed in a central portion of the main chamber, where the central chamber structure is disposed to shield at least a portion of the substrate position from the upper plasma. The apparatus may include a bias source, electrically coupled between the central chamber structure and the substrate holder, to generate a glow discharge plasma in the central portion of the main chamber, wherein the substrate region faces the glow discharge region.
System and method for plasma head helium measurement
An atmospheric pressure plasma system includes an atmospheric pressure plasma source that generates a glow discharge-type plasma. The atmospheric pressure plasma source comprises a plasma head and a gas sensor system. The plasma head includes a gas inlet, a gas passage surrounded by a dielectric liner, a radio frequency (RF) electrode and a ground electrode. The RF electrode and the ground electrode are arranged at opposite sides of an outer surface of a segment of the gas passage. The gas sensor system comprises a first pellistor that is exposed to a process gas entering the gas inlet and provides real-time monitoring of the presence and concentration of helium in the process gas entering the gas inlet during plasma operation.
Visualization device and related systems and methods
According to one aspect, a visualization device may include an image sensor, a lens for focusing light onto the image sensor, a first end, a second end opposite the first end, a lateral wall surface extending between the first end and the second end, and a coating on the lateral wall surface. The coating may include at least one of an electrically-insulating layer and a light-blocking layer, and may be deposited on the lateral wall surface using, for example, physical vapor deposition (PVD).
SYMMETRIC VHF SOURCE FOR A PLASMA REACTOR
The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.
Method for Preparing Transparent Sheet Materials
A method for preparing a transparent sheet material comprising an organic, polymeric substrate and inorganic layers on each side of the substrate, the method comprising the steps of: a) providing an apparatus for generating a glow discharge plasma, said apparatus comprising at least two opposing electrodes, a power supply for the electrodes and a treatment space between the electrodes; b) providing the treatment space with a gas mixture at about atmospheric pressure, the gas mixture comprising a reactive gas and a precursor; and c) moving a transparent substrate through the treatment space comprising the gas mixture at an average speed of at least 1 m/min while applying an electrical potential across the electrodes, thereby generating a glow discharge plasma in the treatment space and depositing an inorganic layer on one or both sides of the substrate; wherein the electrodes apply a discharge energy to the substrate of less than 25 J/cm.sup.2.
Symmetric VHF source for a plasma reactor
The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.
ION BEAM MATERIALS PROCESSING SYSTEM WITH GRID SHORT CLEARING SYSTEM FOR GRIDDED ION BEAM SOURCE
Embodiments relate to a grid short clearing system is provided for gridded ion beam sources used in industrial applications for materials processing systems that reduces grid damage during operation. In various embodiments, the ion source is coupled to a process chamber and a grid short clearing system includes methods for supplying a gas to the process chamber and setting the gas pressure to a predetermined gas pressure in the range between 50 to 750 Torr, applying an electrical potential difference between each adjacent pair of grids using a current-limited power supply, and detecting whether or not the grid shorts are cleared. The electrical potential difference between the grids is at least 10% lower than the DC electrical breakdown voltage between the grids with no contaminants.