A method of evaluating metal contamination by measuring the amount of metal contaminants to a silicon wafer in a rapid thermal processing apparatus includes steps of obtaining a Si single crystal grown by the Czochralski method at a pulling rate of 1.0 mm/min or lower, the crystal having oxygen concentration of 1.3×10.sup.18 atoms/cm.sup.3 or less, slicing silicon wafers from the Si single crystal except regions of 40 mm toward the central portion from the head of the single crystal and 40 mm toward the central portion from the tail, heat-treating the silicon wafer with a rapid thermal processing apparatus and transferring contaminants from members in a furnace of the rapid thermal processing apparatus to the silicon wafer, and measuring a lifetime of the silicon wafer to which contaminants are transferred.

In a method and device for separating components in a corona discharge zone an air stream containing water molecules is passed between at least one ionizing electrode and at least one non-ionizing electrode; and high voltage is applied to the electrodes to create a corona discharge zone consisting of a plasma region wherein ozone is formed and a dark region where predominantly hydrogen peroxide is formed. The air flow entering the corona discharge zone is divided into two separate air flows, a first of which passes through the corona discharge plasma region, and a second of which passes through the dark corona discharge region; and a negative pressure gradient is applied to the plasma region only so as to remove the ozone and thereby separate the ozone from the hydrogen peroxide.

A plasma generator includes an outer electrode that encloses a first inner electrode and a second inner electrode. The first inner electrode includes a plurality of protrusions that extend towards the outer electrode. A voltage signal can be applied across the outer electrode and the first inner electrode to excite gas injected into gaps between the protrusions and the outer electrode. Plasma is generated surrounding the protrusions. The second inner electrode is at a downstream location of the excited gas relative to the first inner electrode. The second inner electrode forms a second gap with the outer electrode. A voltage signal can be applied across the second inner electrode and the outer electrode, further exciting the gas to generate second plasma at the second gap. The second plasma is spread evenly across the second inner electrode and the outer electrode.

A discharge electrode E in an electrode chamber C comprises a plurality of electrode members 8, 9. The electrode members 8, 9 are disposed facing each other by having a supporting member 4 therebetween, a gap is formed between the facing portions of the electrode members 8, 9, and by having the gap as a gas passageway 15, the gas passageway is opened in the leading end of the discharge electrode. A replacement gas having been supplied from a manifold pipe 3 is supplied to the gas passageway 15 via an orifice.

A corona/plasma treatment machine includes an array of electrodes arranged in a helix along a conductive central cylinder, allowing for the efficient surface treatment of materials with greater cross-sectional heights and widths than what is conventionally possible. The corona/plasma treatment machine further includes of a high frequency, high voltage power source, a dielectric, and a contact plate. The array of electrodes is driven using a motor and rotates about its longitudinal axis and is electrically isolated from its surroundings. When power is supplied to the electrode array, electrical energy is discharged from the tips of the electrodes near the contact plate and creates a plasma corona aura formed from the ionization of the surrounding air between the electrode array and the contact plate. A conveyor is positioned below the electrode array and configured to feed material through the plasma corona aura.

Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a first lid plate seated on the chamber body. The first lid plate may define a plurality of apertures through the first lid plate. The systems may include a plurality of lid stacks equal to a number of the plurality of apertures. The systems may define a plurality of isolators. An isolator may be positioned between each lid stack and a corresponding aperture of the plurality of apertures. The systems may include a plurality of annular spacers. An annular spacer of the plurality of annular spacers may be positioned between each isolator and a corresponding lid stack of the plurality of lids stacks. The systems may include a plurality of manifolds. A manifold may be seated within an interior of each annular spacer of the plurality of annular spacers.

A deposition apparatus includes a chamber, a stage which is disposed within the chamber and on which a target substrate is seated, a deposition source disposed within the chamber and including a deposition material, a plurality of nozzles connected to the deposition source within the chamber to inject the deposition material in a direction of the stage, and an ionizer disposed between the nozzles and the stage to charge the deposition material injected from the nozzles. A first electric field is generated in each of the ionizer and the nozzles, and a second electric field having an intensity less than the first electric field is generated between the stage and the ionizer. Each of the nozzles includes a plurality of protrusion tips disposed on an inner surface of each of the nozzles to charge the deposition material.

A surface treatment device includes a body and a plasma source disposed within the body. The plasma source includes a first inlet through the body and an ionization wave generator adjacent the first inlet to receive feedstock gas via the first inlet. The ionization wave generator includes a dielectric tube that necks down to define an elongated throat. The surface treatment device also includes a second inlet through the body and an expansion nozzle disposed within the body downstream of the second inlet. The second inlet is disposed at the elongated throat to provide further feedstock gas.

A substrate processing apparatus includes a reaction chamber including an inlet through which a reaction gas is supplied and an outlet through which residue gas is exhausted; a plurality of ionizers located at a front end of the inlet and configured to ionize the reaction gas supplied through the inlet; and a heater configured to heat the reaction chamber. The plurality of ionizers include a first ionizer configured to ionize the reaction gas positively; and a second ionizer configured to ionize the reaction gas negatively.

A method of producing an induced pluripotent stem cell, comprising the step of introducing at least one kind of non-viral expression vector incorporating at least one gene that encodes a reprogramming factor into a somatic cell. In some embodiments, the gene that encodes a reprogramming factor is one or more kind of genes selected from the group consisting of an Oct family gene, a Klf family gene, a Sox family gene, a Myc family gene, a Lin family gene, and the Nanog gene.