There is a plasma processing apparatus comprising: a chamber; a substrate support configured to support a substrate and an edge ring; high-frequency power supply configured to generate first high-frequency power via the substrate and second high-frequency power via the edge ring; and bias power supply configured to generate first electric bias energy supplied to the substrate and second electric bias energy supplied to the edge ring, wherein the first electric bias energy and the second electric bias energy have a waveform repeatedly at a cycle, the cycle includes a first period in which voltage of each of the first and second electric bias energies has a positive level with respect to an average value of the voltage within the cycle, and a second period in which the voltage of each of the first and second electric bias energies has a negative level with respect to the average value.

A plasma processing apparatus includes: a first electrode on which a substrate is placed; a plasma generation source that generates plasma; a bias power supply that supplies bias power to the first electrode; a source power supply that supplies source power to the plasma generation source; and a controller. The controller performs a control such that a first state and a second state of the source power are alternately applied in synchronization with a high frequency cycle of the bias power, or a phase within one cycle of a reference electrical state indicating any one of a voltage, a current and an electromagnetic field measured in a power feed system of the bias power, and performs a control to turn OFF the source power at least at a negative side peak of the phase within one cycle of the reference electrical state.

Embodiments of the present disclosure generally relate to a system used in a semiconductor device manufacturing process. More specifically, embodiments provided herein generally include apparatus and methods for synchronizing and controlling the delivery of an RF bias voltage signal and a pulsed voltage waveform to one or more electrodes within a plasma processing chamber. Embodiments of the disclosure include a method and apparatus for synchronizing a pulsed radio frequency (RF) waveform to a pulsed voltage (PV) waveform, such that the pulsed RF waveform is on during a first stage of the PV waveform and off during a second stage. The first stage of the PV waveform includes a sheath collapse stage. The second stage of the PV waveform includes an ion current stage.

Some embodiments may include a nanosecond pulser comprising a plurality of solid state switches; a transformer having a stray inductance, L.sub.s, a stray capacitance, C.sub.s, and a turn ratio n; and a resistor with a resistance, R, in series between the transformer and the switches. In some embodiments, the resonant circuit produces a Q factor according to $Q=\frac{1}{R}\sqrt{\frac{L_s}{C_s}};$
and the nanosecond pulser produces an output voltage V.sub.out from an input voltage V.sub.in, according to V.sub.out=QnV.sub.in.

An inductively-coupled plasma (ICP) generation system may include a dielectric tube, a first inductive coil structure to enclose the dielectric tube, an RF power supply, a first main capacitor between a positive output terminal of the RF power supply and one end of the first inductive coil structure, and a second main capacitor between a negative output terminal of the RF power supply and an opposite end of the first inductive coil structure. The first inductive coil structure may include inductive coils connected in series to each other and placed at different layers, the inductive coils having at least one turn at each layer, and auxiliary capacitors, which are respectively provided between adjacent ones of the inductive coils to distribute a voltage applied to the inductive coils.

Some embodiments may include a nanosecond pulser comprising a plurality of solid state switches; a transformer having a stray inductance, L.sub.s, a stray capacitance, C.sub.s, and a turn ratio n; and a resistor with a resistance, R, in series between the transformer and the switches. In some embodiments, the resonant circuit produces a Q factor according to

[00001]$Q=\frac{1}{R}\sqrt{\frac{L_s}{C_s}},$

and the nanosecond pulser produces an output voltage V.sub.out from an input voltage V.sub.in, according to V.sub.out=QnV.sub.in.

A method for controlling reflected power in a plasma processing system is provided, including: applying RF power from a first generator to an ESC; applying RF power from a second generator to an edge electrode that surrounds the ESC and is disposed below an edge ring that surrounds the ESC, the RF power from the second generator having a voltage set based on the amount of use of the edge ring, wherein the second generator automatically introduces a phase adjustment so that a phase of the RF power from the second generator substantially matches a phase of the RF power from the first generator; and, adjusting a variable capacitor of a match circuit through which the RF power from the second generator is applied to tune the phase adjustment to a target phase adjustment setting.

An RF generating device 2, which attenuates harmonics in RF power amplified by an RF amplifier and supplied to plasma generating electrodes, includes an RF generation unit 201 that generates a composite wave by combining a fundamental wave with a compensation wave which is made by inverting a phase of a harmonic generated by inputting the fundamental wave.

Methods and apparatuses for depositing thin films using plasma-enhanced atomic layer deposition (PEALD) with ramping radio-frequency (RF) power are provided herein. Embodiments involve increasing the RF power setting of PEALD cycles after formation of initial screening layers at low RF power settings.

An inductively-coupled plasma (ICP) generation system may include a dielectric tube, a first inductive coil structure to enclose the dielectric tube, an RF power supply, a first main capacitor between a positive output terminal of the RF power supply and one end of the first inductive coil structure, and a second main capacitor between a negative output terminal of the RF power supply and an opposite end of the first inductive coil structure. The first inductive coil structure may include inductive coils connected in series to each other and placed at different layers, the inductive coils having at least one turn at each layer, and auxiliary capacitors, which are respectively provided between adjacent ones of the inductive coils to distribute a voltage applied to the inductive coils.