A substrate processing device capable of preventing deformation of a substrate during a process includes a substrate supporting unit having a contact surface that comes into contact with an edge of a substrate to be processed, wherein the substrate supporting unit includes a protruding (e.g. embossed) structure protruding from a base to support deformation from the inside of the edge of the substrate to be processed.

A substrate processing device capable of preventing deformation of a substrate during a process includes a substrate supporting unit having a contact surface that comes into contact with an edge of a substrate to be processed, wherein the substrate supporting unit includes a protruding (e.g. embossed) structure protruding from a base to support deformation from the inside of the edge of the substrate to be processed.

One plasma processing apparatus according to the invention includes: a processing chamber in which a sample is subjected to plasma processing; a first radio frequency power supply configured to supply a first radio frequency power for generating plasma via a matching unit; a sample stage on which the sample is placed; a second radio frequency power supply configured to supply a second radio frequency power to the sample stage; and a control device configured to control a matching unit so as to perform matching during a period corresponding to a mode in which a requirement for matching by the matching unit is defined when the first radio frequency power is modulated by a waveform having a plurality of amplitude values and repeating periodically. The period is each period of the waveform corresponding to any one of the plurality of amplitude values.

A plasma processing apparatus includes: a chamber; a substrate support provided in the chamber; a bias power supply that supplies an electrical bias energy to an electrode of the substrate support; a matching box including a matching circuit; a radio-frequency power supply that supplies a radio-frequency power having a variable frequency into the chamber through the matching box, and adjusts the frequency of the radio-frequency power in each of a plurality of phase periods within the cycle of the electrical bias energy; a sensor that detects an electrical signal reflecting a deviation of a load impedance of the radio-frequency power supply from a matching state; and a filter that generates a filtered signal by removing and an intermodulation distortion component of the radio-frequency power and the electrical bias energy from the electrical signal in each of the plurality of phase periods.

Embodiments disclosed herein include a high-frequency emission module. In an embodiment, the high-frequency emission module comprises a solid state high-frequency power source, an applicator for propagating high-frequency electromagnetic radiation from the power source, and a thermal break coupled between the power source and the applicator. In an embodiment, the thermal break comprises a substrate, a trace on the substrate, and a ground plane.

A plasma processing apparatus comprising: a chamber; a lower electrode provided in the chamber and included in a substrate support mounts a substrate thereon; an upper electrode provided in the chamber and disposed to face the lower electrode; a gas supply configured to supply a processing gas between the upper electrode and the lower electrode; a high-frequency power supply electrically connected to the upper electrode and configured to generate a plasma of the processing gas by applying a high-frequency voltage to the upper electrode; and a circuit portion electrically connected between the high-frequency power supply and the lower electrode and provides a potential to the lower electrode. The circuit portion provides the potential to the lower electrode by causing a current to flow from the high-frequency power supply toward the lower electrode when a potential of the high-frequency power supply is higher than a potential of the lower electrode.

There is provided a plasma processing apparatus comprising: a chamber; a mounting stage mounting a substrate and a ring assembly on a periphery of the substrate; a fixation portion fixing at least one of the substrate and the ring assembly to the mounting stage; a heat transfer gas supply supplying heat transfer gas between the mounting stage and at least one of the substrate and the ring assembly; a heat transfer gas exhauster exhausting the heat transfer gas therefrom; an RF power supply supplying an RF signal for plasma generation; and a controller controlling the heat transfer gas supply so that pressure of the heat transfer gas is lower than that at the time of plasma processing for the substrate before performing the plasma processing for the substrate when at least one of the substrate and the ring assembly is mounted on the mounting stage.

A deposition apparatus and a method are provided. A method includes placing a substrate over a platform in a chamber of a deposition system. A precursor material is introduced into the chamber. A first gas curtain is generated in front of a first electromagnetic (EM) radiation source coupled to the chamber. A plasma is generated from the precursor material in the chamber, wherein the plasma comprises dissociated components of the precursor material. The plasma is subjected to a first EM radiation from the first EM radiation source. The first EM radiation further dissociates the precursor material. A layer is deposited over the substrate. The layer includes a reaction product of the dissociated components of the precursor material.

The present disclosure relates to a multi-chamber apparatus and a semiconductor process method which includes steps of applying a first chamber and a second chamber with a process gas and a radio frequency, so as to acquire a first time difference between a plot of the first initial RF applying versus time and a plot of gas flow versus time and a second time difference between a plot of the second initial RF applying versus time and the plot of gas flow versus time in advance, then executing calibration through the first time difference and the second time difference. Accordingly, a first radio frequency generating unit, a second radio frequency generating unit and a gas source unit of the multi-chamber apparatus are turned off simultaneously, such that quality of the first substrate deposited in the first chamber and the second substrate deposited in the second chamber are relatively uniform.

A plasma processing apparatus includes a plasma processing chamber; a base disposed in the plasma processing chamber; an electrostatic chuck, disposed on the base, having a substrate support portion and an edge ring support portion on which an edge ring is disposed so as to surround a substrate; a first clamping electrode disposed in the substrate support portion; a first bias electrode disposed below the first clamping electrode in the substrate support portion; a second clamping electrode disposed in the edge ring support portion; a second bias electrode disposed below the second clamping electrode in the edge ring support portion; a first power source electrically connected to the first bias electrode; and a second power source electrically connected to the second bias electrode.