Provided is a doping method for doping by injecting a dopant into a processing target substrate. According to this doping method, a value of bias electric power supplied during a plasma doping processing is set to a predetermined value on premise of a washing processing to be performed after a plasma doping, and plasma is generated within a processing vessel using microwaves so as to perform the plasma doping processing on the processing target substrate hold on a holding pedestal in the processing vessel.

A device includes a microwave generator configured to generate a microwave having a bandwidth, an output unit, a directional coupler and a measurer. The microwave generator generates a microwave a power of which is pulse-modulated to be a High level and a Low level. A set carrier pitch is set to satisfy a preset condition. The preset condition includes a condition that a value obtained by dividing a set pulse frequency by the set carrier pitch or a value obtained by dividing the set carrier pitch by the set pulse frequency is not an integer and a condition that an ON-time of the High level is equal to or larger than 50%. The microwave generator averages a first High measurement value and a first Low measurement value in a preset moving average time longer than a sum of the ON-time of the High level at a preset sampling interval.

In order to provide a plasma processing apparatus capable of easily controlling a plasma density distribution on a processing target substrate, a plasma processing apparatus includes: a microwave generating source; a waveguide path including waveguides that transmit a microwave generated by the microwave generating source to a processing chamber; the processing chamber that includes therein a placing table for placing the processing target substrate and is connected to the waveguide path; a gas introduction unit that introduces gas into the processing chamber; and an exhaust unit that discharges the gas introduced into the processing chamber to the outside of the processing chamber, in which a portion of the waveguide path connected to the processing chamber includes a plurality of waveguides formed coaxially.

In order to enable plasma density distribution control having a high degree of freedom to solve problems of not only in-plane uniformity of an etching processing but also a reduction of a charge-up damage, a plasma processing apparatus includes: a vacuum chamber provided with a plasma processing chamber that plasma-processes a substrate inside and is able to exhaust the inside of this plasma processing chamber to a vacuum; and a microwave power supply unit that is provided with a microwave source and a circular waveguide and supplies, via the circular waveguide, a microwave power oscillated from the microwave source to the vacuum chamber, in which the microwave power supply unit is configured by arranging a plurality of waveguides, which are coaxially and concentrically arranged with the circular waveguide and have different dielectric constants inside, between the circular waveguide and the vacuum chamber.

An array antenna radiates an electromagnetic wave into a chamber of a plasma processing apparatus. The array antenna includes antennas and coupling prevention elements arranged at intervals between the antennas. Each of the coupling prevention elements includes a first member connected to a ceiling wall which is a ground surface in the chamber and a second member connected to a tip end of the first member or a vicinity of the tip end of the first member.

Methods of depositing a film using a plasma enhanced process are described. The method comprises providing continuous power from a power source connected to a microwave plasma source in a process chamber and a dummy load, the continuous power split into pulses having a first time and a second time defining a duty cycle of a pulse. The continuous power is directed to the microwave plasma source during the first time, and the continuous power is directed to the dummy load during the second time.

A plasma processing method in which a stable process region can be ensured in a wide range, from low microwave power to high microwave power. The plasma processing method includes making production of plasma easy in a region in which production of plasma by continuous discharge is difficult, and plasma-processing an object to be processed, with the generated plasma, wherein the plasma is produced by pulsed discharge in which ON and OFF are repeated, radio-frequency power for producing the pulsed discharge, during an ON period, is a power to facilitate production of plasma by continuous discharge, and a duty ratio of the pulsed discharge is controlled so that an average power of the radio-frequency power per cycle is power in the region in which production of plasma by continuous discharge is difficult.

Embodiments disclosed herein include a method of etching a 3D structure. In an embodiment, the method comprises providing the 3D structure in a microwave plasma chamber. In an embodiment, the 3D structure comprises a substrate, and alternating layers of silicon oxide and silicon nitride over the substrate. In an embodiment, the method further comprises flowing a first gas into the microwave plasma chamber, where the first gas comprises sulfur and fluorine. In an embodiment, the method comprises flowing a second gas into the microwave plasma chamber, where the second gas comprises an inert gas. In an embodiment, the method further comprises striking a plasma in the microwave plasma chamber, and etching the silicon nitride, where an etching selectivity of silicon nitride to silicon oxide is 50:1 or greater.

A controller of a plasma processing apparatus stores a frequency spectrum related to a first timing into a storage unit, controls a microwave generator to generate a microwave in correspondence to a setting frequency, setting power, and a setting bandwidth at a second timing, controls a demodulator to measure travelling wave power and reflected wave power of the microwave for each frequency, calculates the frequency spectrum related to the second timing on the basis of a measurement result from the demodulator, calculates a correction value for correcting a waveform of the travelling wave power for each frequency such that a difference for each frequency between the frequency spectrum related to the second timing and the frequency spectrum related to the first timing, stored in the storage unit, is small, and controls the microwave generator on the basis of the calculated correction value for each frequency.

A substrate processing method includes: a step of preparing a substrate in a chamber of a substrate processing apparatus; a step of correcting a set power value based on a correction value Y from Equation (1), coefficients A, B, C, and D, and a variable X indicating a processed amount of the substrates having been subjected to continuous film formation processes, referring to a storage in which the coefficients A, B, C, and D of the Equation (1) used to calculate the correction value Y for the set power value are stored; and a step of processing the prepared substrate by applying power with the corrected power value into the chamber, the Equation (1) is expressed as Y=Aexp(BX)+CX+D, where at least one of the coefficients A, C, and D is not zero, and when the coefficient A is not zero, the coefficient B is also not zero.