An artificial diamond plasma production device has a reaction chamber, a microwave emitting module, and a microwave lens. The microwave emitting module emits a circularly-polarized microwave into the reaction chamber. The microwave emitting module has a polarizing tube, a directing tube, a first waveguide, and a first linearly-polarized microwave source serially connected along a microwave traveling path. The microwave emitting module further has a second waveguide and a first matched load. The polarizing tube is configured to convert a linearly-polarized microwave into a circularly-polarized microwave or the other way round depending on traveling direction of the microwave. The directing tube has a first opening and a second opening which face toward different directions. The first waveguide is connected to the first opening. The first matched load is connected to the second opening via the second waveguide. Therefore, reflected microwave can be channeled out of the reaction chamber.

A plasma generation system includes a reference clock, a plurality of solid state generator modules, and a processing chamber. The reference clock is configured to generate a reference signal. Each solid state generator module is linked to an electronic switch and each electronic switch is linked to the reference clock. The solid state generator modules are each configured to generate an output based on the reference signal from the reference clock. The processing chamber is configured to receive the output of at least two of the solid state generator modules to combine the outputs of said solid state generator modules therein.

Methods of depositing a film using a plasma enhanced process are described. The method comprises providing continuous power from a power source connected to a microwave plasma source in a process chamber and a dummy load, the continuous power split into pulses having a first time and a second time defining a duty cycle of a pulse. The continuous power is directed to the microwave plasma source during the first time, and the continuous power is directed to the dummy load during the second time.

A method and apparatus is provided for obtaining a low average electron energy flux onto a substrate in a processing chamber. A processing chamber includes a substrate support therein for chemical processing. An energy source induced plasma, and ion propelling means, directs energetic plasma electrons toward the substrate support. A dipole ring magnet field is applied perpendicular to the direction of ion travel, to effectively prevent electrons above an acceptable maximum energy level from reaching the substrate holder. Rotation of the dipole magnetic field reduces electron non-uniformities.

An electric field sensor includes a probe, a cylindrical probe guide, an insulating member, a preload spring and a connector. The probe serves as an inner conductor of a coaxial transmission path and has a portion forming a monopole antenna at a tip end to be in constant contact with a microwave transmission window by a pressing force of a built-in spring thereof. The probe guide is disposed at an outer side of the probe and serves as an outer conductor of the coaxial transmission path. The insulating member is disposed between the probe and the probe guide. The preload spring preloads the probe guide downward and presses the probe guide so that the tip end of the probe guide comes in constant contact with the planar slot antenna. The connector is connected to the probe and the probe guide to connect coaxial signal cables for extracting signals.

A rotating microwave is established for any resonant mode TE.sub.mnl or TM.sub.mnl of a cavity, where the user is free to choose the values of the mode indices m, n and l. The fast rotation, the rotation frequency of which is equal to an operational microwave frequency, is accomplished by setting the temporal phase difference ΔØ and the azimuthal angle Δθ between two microwave input ports P and Q as functions of m, n and l. The slow rotation of frequency Ω.sub.a (typically 1-1000 Hz), is established by transforming dual field inputs α cos Ω.sub.at and ±α sin Ω.sub.at in the orthogonal input system into an oblique system defined by the angle Δθ between two microwave ports P and Q.

There is provided a plasma processing apparatus. The apparatus comprises: a chamber body; and a power supply unit configured to output power for exciting a gas supplied to an inside of the chamber body. The power supply unit supplies, as power having a center frequency, a bandwidth, and a carrier pitch respectively corresponding to a set frequency, a set bandwidth, and a set carrier pitch that are indicated by a controller, power which is pulse-modulated so as to be a pulse frequency, a duty ratio, a high level, and a low level respectively corresponding to a set pulse frequency, a set duty ratio, a high-level set power, and a low-level set power indicated by the controller, and in which a pulse on time determined by the set pulse frequency and the set duty ratio is longer than a power fluctuation cycle of the power having the bandwidth.

A method of generating power with a power generation system. Solid state generators generate a plurality of outputs. The outputs of the solid state generator modules are combined from a plurality of channels, in a combiner, using a phase optimization technique to generate an in phase combined output power.

A plasma reactor has a cylindrical microwave cavity overlying a workpiece processing chamber, a microwave source having a pair of microwave source outputs, and a pair of respective waveguides. The cavity has first and second input ports in a sidewall and space apart by an azimuthal angle. Each of the waveguides has a microwave input end coupled to a microwave source output and a microwave output end coupled to a respective one of the first and second input ports, a coupling aperture plate at the output end with a rectangular coupling aperture in the coupling aperture plate, and an iris plate between the coupling aperture plate and the microwave input end with a rectangular iris opening in the iris plate.

Provided is a focalized microwave plasma reactor. The reactor utilizes a cylindrical microwave resonant cavity of the quasi-TM.sub.011 mode to focalize microwave power and to excite focalized microwave plasma for the processes of microwave plasma enhanced chemical vapour depositions.