A plasma processing apparatus includes a microwave output unit, a wave guide tube, a tuner, a demodulation unit, and a calculation unit. The microwave output unit outputs a microwave having power corresponding to setting power while frequency-modulating the microwave in a setting frequency range. The wave guide tube guides the microwave to an antenna of a chamber main body. The tuner is provided in the wave guide tube and adjusts a position of a movable plate. The demodulation unit is provided in the wave guide tube, and acquires travelling wave power and reflected wave power for each frequency. The calculation unit calculates a frequency at which a reflection coefficient, which is calculated on the basis of the travelling wave power and the reflected wave power, for each frequency becomes a minimum point as an absorption frequency.

An inspection method is provided. The inspection method includes monitoring power of a reflected wave of a power wave supplied from a source power supply for generation of plasma in a plasma processing apparatus, and obtaining a fluctuation amount of a measured value within a period after initiation of the supply of the power wave. The fluctuation amount of the measured value is a fluctuation amount indicating a fluctuation in a peak-to-peak voltage at a lower electrode of the substrate support in the chamber or a fluctuation amount indicating a fluctuation in impedance of a load including the lower electrode.

A semiconductor manufacturing apparatus includes: a processing container that accommodates a substrate holder that holds a plurality of substrates in a shelf shape; a gas supply that supplies a processing gas into the processing container; and a microwave introducer that generates a plasma from the processing gas. The microwave introducer includes: a rectangular waveguide provided along a length direction of the processing container and including a plurality of slots that radiates microwaves; and a phase controller that is provided at an end of the rectangular waveguide and controls a phase of the microwaves propagating in the rectangular waveguide.

In order to provide a plasma processing apparatus capable of easily controlling a plasma density distribution on a processing target substrate, a plasma processing apparatus includes: a microwave generating source; a waveguide path including waveguides that transmit a microwave generated by the microwave generating source to a processing chamber; the processing chamber that includes therein a placing table for placing the processing target substrate and is connected to the waveguide path; a gas introduction unit that introduces gas into the processing chamber; and an exhaust unit that discharges the gas introduced into the processing chamber to the outside of the processing chamber, in which a portion of the waveguide path connected to the processing chamber includes a plurality of waveguides formed coaxially.

The inventive concept provides a substrate treating apparatus. In an embodiment the substrate treating apparatus includes a process chamber having a treating space therein for treating a substrate; a substrate support unit configured to support the substrate in the treating space; and a microwave application unit configured to apply a microwave to the treating space, and wherein the microwave application unit comprises a microwave power generator based on a solid state device.

A plasma generation system includes a reference clock, a plurality of solid state generator modules, and a processing chamber. The reference clock is configured to generate a reference signal. Each solid state generator module is linked to an electronic switch and each electronic switch is linked to the reference clock. The solid state generator modules are each configured to generate an output based on the reference signal from the reference clock. The processing chamber is configured to receive the output of at least two of the solid state generator modules to combine the outputs of said solid state generator modules therein.

A microwave generating system includes a modular architecture which is configurable to provide power output from under 1-kilowatt to over 100-kilowatts. The various power levels are achieved by combining the RF outputs of multiple RF power amplifiers in a corporate structure. The system can be used on any ISM band. Each system component incorporates a dedicated embedded microcontroller for high performance real-time control response. The components are connected to a high speed digital data bus, and are commanded and supervised by a control program running on a host computer.

A controller of a plasma processing apparatus stores a frequency spectrum related to a first timing into a storage unit, controls a microwave generator to generate a microwave in correspondence to a setting frequency, setting power, and a setting bandwidth at a second timing, controls a demodulator to measure travelling wave power and reflected wave power of the microwave for each frequency, calculates the frequency spectrum related to the second timing on the basis of a measurement result from the demodulator, calculates a correction value for correcting a waveform of the travelling wave power for each frequency such that a difference for each frequency between the frequency spectrum related to the second timing and the frequency spectrum related to the first timing, stored in the storage unit, is small, and controls the microwave generator on the basis of the calculated correction value for each frequency.

A microwave treatment device comprises a treatment chamber, in which an object to be treated can be arranged, and a microwave emission device, by which microwave radiation can be radiated into the treatment chamber or emitted therein. The microwave emission device comprises at least one array antenna with a plurality of individual emitters and a microwave control device which can be used to specify an emission characteristic for each individual emitter of the at least one array antenna. A phase and/or amplitude of the microwave emission can be specified for each individual emitter by the microwave control device. A phase and/or an amplitude of the microwave emission can be specified for each individual emitter by the microwave control device. Furthermore, a frequency of the microwave emission can be specified within a frequency range for each individual emitter by the microwave device.

A microwave supply apparatus includes a waveguide, a circulator, and a matcher, a first port of the circulator receives a microwave from an input end. First and second ends of the waveguide are coupled to second and third ports of the circulator, respectively. The matcher is provided between the input end and the first port of the circulator. The waveguide includes a rectangular waveguide having first and second walls facing each other, and third and fourth walls facing each other. A slot hole is formed in the first wall, and the slot hole is provided at a region deviated to the third wall side. The waveguide includes a first ridge portion provided therein. The first ridge portion faces the slot hole, is in contact with the second wall and third wall, and is separated from the first wall and fourth wall.