In a vacuum processing apparatus including: a vacuum container including a processing chamber therein; a plasma formation chamber; plate members being arranged between the processing chamber and the plasma formation chamber; and a lamp and a window member being arranged around the plate members, in order that a wafer and the plate members are heated by electromagnetic waves from the lamp, a bottom surface and a side surface of the window member is formed of a member transmitting the electromagnetic waves therethrough.

A plasma processing apparatus includes a chamber providing a space for processing a substrate, a substrate stage configured to support the substrate within the chamber and including a lower electrode, an upper electrode facing the lower electrode, a focus ring in or on an upper peripheral region of the substrate stage to surround the substrate, and a plasma adjustment assembly in at least one of a first position between the upper electrode and the lower electrode and a second position between the focus ring and the lower electrode, the plasma adjustment assembly including a photoreactive material layer and a plurality of light sources configured to irradiate light onto a local region of the photoreactive material layer. A capacitance of the local region is changed as the light is irradiated to the local region.

A broadband light source is disclosed. The broadband light source includes a rotatable gas containment structure. The broadband light source includes a rotational drive system configured to rotate the rotatable gas containment structure about the horizontal axis of rotation of the rotatable gas containment structure. The broadband light source includes a pump source configured to generate pump illumination and a reflector element configured to direct a portion of the pump illumination into the gas to sustain a plasma. The reflector is configured to collect a portion of broadband light emitted from the plasma.

A diamond and a preparation method and use. The method for preparing diamond comprises: processing a substrate material of a substrate holder to obtain a surface that is easily separated from diamond films using a plasma chemical vapor deposition method to form a diamond film layer on the surface of the substrate holder, wherein the plasma chemical vapor deposition uses a multi-energy sources coupled plasma; post-processing the diamond film layer to remove impurity material on the diamond surface and a nucleation layer and/or stress layer with inconsistent properties of a main body of the diamond film. The method has the advantages of controllable thickness, controllable quality, controllable cost, etc., and lays the foundation for diamond in the fields of cutting tools and heat sinks.

An ion extraction assembly for an ion source is provided. The ion extraction assembly may include a plurality of electrodes, wherein the plurality of electrodes comprises: a plasma-facing electrode, arranged for coupling to a plasma chamber; and a substrate-facing electrode, disposed outside of the plasma-facing electrode. The at least one electrode of the plurality of electrodes may include a grid structure, defining a plurality of holes, wherein the at least one electrode has a non-uniform thickness, wherein a first grid thickness in a middle region of the at least one electrode is different than a second grid thickness, in an outer region of the at least one electrode.

The disclosure relates to a substrate processing apparatus, comprising: a first reactor constructed and arranged to process a rack with a plurality of substrates therein; a second reactor constructed and arranged to process a substrate; and, a substrate transfer device constructed and arranged to transfer substrates to and from the first and second reactor. The second reactor may be provided with an illumination system constructed and arranged to irradiate ultraviolet radiation within a range from 100 to 500 nanometers onto a top surface of at least a substrate in the second reactor.

The invention relates to a device for pulsed laser deposition and a substrate with a substrate surface, which device includes: a substrate holder for holding the substrate; a target arranged facing the substrate surface of the substrate; a velocity filter arranged between the substrate and the target; a pulsed laser directed onto the target at a target spot for generating a plasma plume of target material; and a plasma hole plate arranged between the target and the substrate. The plasma hole plate has a plasma passage opening divided in an upstream section and a downstream section by a dividing plane. The target spot coincides with the dividing plane, and the surface area of the upstream section is larger than the surface area of the downstream section.

A plasma processing apparatus includes a chamber providing a space for processing a substrate, a substrate stage configured to support the substrate within the chamber and including a lower electrode, an upper electrode facing the lower electrode, a focus ring in or on an upper peripheral region of the substrate stage to surround the substrate, and a plasma adjustment assembly in at least one of a first position between the upper electrode and the lower electrode and a second position between the focus ring and the lower electrode, the plasma adjustment assembly including a photoreactive material layer and a plurality of light sources configured to irradiate light onto a local region of the photoreactive material layer. A capacitance of the local region is changed as the light is irradiated to the local region.

A substrate processing system includes a gas source, an RF source, and a light source. The gas source supplies a first gas to a process module of the substrate processing system. The RF source supplies RF power to the process module to generate plasma when the first gas is supplied to the process module of the substrate processing system. The light source is coupled to the process module to introduce light into the process module during the plasma generation.

The disclosure relates to a substrate processing apparatus, comprising: a first reactor constructed and arranged to process a rack with a plurality of substrates therein; a second reactor constructed and arranged to process a substrate; and, a substrate transfer device constructed and arranged to transfer substrates to and from the first and second reactor. The second reactor may be provided with an illumination system constructed and arranged to irradiate ultraviolet radiation within a range from 100 to 500 nanometers onto a top surface of at least a substrate in the second reactor.