A system may include a substrate stage, configured to support a substrate, where a main surface of the substrate defines a substrate plane. The system may include an ion source, including an extraction assembly that is oriented to direct an ion beam to the substrate along a trajectory defining a non-zero angle of incidence with respect to a perpendicular to the substrate plane. The system may include a radical source oriented to direct a radical beam to the substrate along a trajectory defining the non-zero angle of incidence with respect to a perpendicular to the substrate plane. The substrate stage may be further configured to scan the substrate along a first direction, lying with the substrate plane, while the main surface of the substrate is oriented within the substrate plane.

A method is provided. The method may include providing a substrate, the substrate comprising a substrate surface, the substrate surface having a three-dimensional shape. The method may further include directing a depositing species from a deposition source to the substrate surface, wherein a layer is deposited on a deposition region of the substrate surface. The method may include performing a substrate scan during the directing or after the directing to transport the substrate from a first position to a second position. The method may also include directing angled ions to the substrate surface, in a presence of the layer, wherein the layer is sputter-etched from a first portion of the deposition region, and wherein the layer remains in a second portion of the deposition region.

A single plasma nozzle of a plasma treatment station is used to treat the card surface prior to performing drop-on-demand printing on the card surface. The single plasma nozzle has a plasma discharge width that is less than the width of the card. The card and the plasma nozzle are moved relative to one another using a two direction control scheme during plasma treatment in order to be able to plasma treat a desired area of the card surface. The card and the plasma nozzle may also be moveable toward or away from one another to change the distance therebetween.

A system may include a substrate stage, configured to support a substrate, where a main surface of the substrate defines a substrate plane. The system may include an ion source, including an extraction assembly that is oriented to direct an ion beam to the substrate along a trajectory defining a non-zero angle of incidence with respect to a perpendicular to the substrate plane. The system may include a radical source oriented to direct a radical beam to the substrate along a trajectory defining the non-zero angle of incidence with respect to a perpendicular to the substrate plane. The substrate stage may be further configured to scan the substrate along a first direction, lying with the substrate plane, while the main surface of the substrate is oriented within the substrate plane.

A single plasma nozzle of a plasma treatment station is used to treat the card surface prior to performing drop-on-demand printing on the card surface. The single plasma nozzle has a plasma discharge width that is less than the width of the card. The card and the plasma nozzle are moved relative to one another using a two direction control scheme during plasma treatment in order to be able to plasma treat a desired area of the card surface. The card and the plasma nozzle may also be moveable toward or away from one another to change the distance therebetween.

A single plasma nozzle of a plasma treatment station is used to treat the card surface prior to performing drop-on-demand printing on the card surface. The single plasma nozzle has a plasma discharge width that is less than the width of the card. The card and the plasma nozzle are moved relative to one another using a two direction control scheme during plasma treatment in order to be able to plasma treat a desired area of the card surface. The card and the plasma nozzle may also be moveable toward or away from one another to change the distance therebetween.

The present invention relates to an electrode pair for generating a linear plasma wherein the electrodes (21, 22) are segmented. More particularly, the present invention relates to a plasma source, for instance a hollow-cathode plasma source, comprising one or more plasma-generating electrode pairs wherein the electrodes are segmented. The present invention further relates to methods for controlling the uniformity of a linear plasma and also to methods for surface treating or coating substrates in a uniform way with linear plasma sources.

A method is provided. The method may include providing a substrate, the substrate comprising a substrate surface, the substrate surface having a three-dimensional shape. The method may further include directing a depositing species from a deposition source to the substrate surface, wherein a layer is deposited on a deposition region of the substrate surface. The method may include performing a substrate scan during the directing or after the directing to transport the substrate from a first position to a second position. The method may also include directing angled ions to the substrate surface, in a presence of the layer, wherein the layer is sputter-etched from a first portion of the deposition region, and wherein the layer remains in a second portion of the deposition region.

A plasma processing method is provided. The method includes receiving a substrate in a substrate support that is configured to be movable along a linear path. The method includes providing at least one process gas into a plasma microchamber. The plasma microchamber is disposed in a processing head having a length that is at least longer than a diameter of the substrate, and said length is perpendicular to said linear path. The method includes generating a plasma in the plasma microchamber by applying power to the plasma microchamber and applying a bias power to the substrate support. The plasma microchamber has an open side process area that is oriented and directed over a surface to be processed, and the open side process area is less than an area of the surface to be processed. The method includes translating said substrate support along said linear path while said microchamber generates the plasma in the plasma microchamber for exposing said plasma over the substrate. The translating of said substrate support along the linear path while generating said plasma via said microchamber provides for exposing said plasma across the substrate. The plasma is used for either depositing or etching a material.

An atmospheric plasma treatment station is integrated in a semiconductor process tool. The atmospheric plasma treatment station directly interfaces with a deposition chamber of the semiconductor process tool without adding to the footprint or form factor of the semiconductor process tool. The atmospheric plasma treatment station includes a movable atmospheric plasma source such as a linear head for scanning across a surface of a substrate. The atmospheric plasma treatment station provides an enclosed space in a controlled environment with non-reactive gas flowing through the enclosed space. Process gases may be supplied to the linear head based on a surface condition of the substrate being treated.