H01J37/32403

DOPING METHOD, DOPING APPARATUS, AND SEMICONDUCTOR ELEMENT MANUFACTURING METHOD

Provided is a doping method for doping by injecting a dopant into a processing target substrate. According to this doping method, a value of bias electric power supplied during a plasma doping processing is set to a predetermined value on premise of a washing processing to be performed after a plasma doping, and plasma is generated within a processing vessel using microwaves so as to perform the plasma doping processing on the processing target substrate hold on a holding pedestal in the processing vessel.

Plasma etching method using faraday cage

A plasma etching method using a Faraday cage, which effectively produces a blazed grating pattern.

Rotary plasma reactor

A rotary plasma reactor system is provided. In another aspect, a plasma reactor is rotatable about a generally horizontal axis within a vacuum chamber. A further aspect employs a plasma reactor, a vacuum chamber, and an elongated electrode internally extending within a central area of the reactor. Yet another aspect employs a plasma reactor for use in activating, etching and/or coating tumbling workpiece material.

Plasma treating an implant
11495438 · 2022-11-08 · ·

A method is provided for treating an implant in a medical care center prior to using the implant in a medical procedure. The method comprises applying a plasma-generating electromagnetic (EM) field using at least one electrode so as to generate plasma in a vicinity of the implant while displacing the electrode and the implant relative to one another. A portable plasma module and a docking station configured to connect to the portable plasma module, thereby forming a plasma generating system, are also provided. A plasma generating apparatus for treating an implant prior to using the implant in a medical procedure is also provided.

Plasma processing method and plasma processing apparatus

A plasma processing method that is executed by a plasma processing apparatus including a processing container containing a target substrate, a plurality of plasma sources, and a gas supply apparatus for supplying gas includes: supplying the gas from the gas supply apparatus into the processing container; individually controlling intensity of power introduced from each of the plurality of plasma sources into the processing container; and generating plasma of the gas by the intensity of the power introduced from each of the plurality of plasma sources and depositing a desired film on a second surface of the target substrate that is an opposite surface of a first surface of the target substrate so as to apply desired film stress to a film on the first surface.

METHOD OF ION-PLASMA APPLICATION OF CORROSION-RESISTANT FILM COATINGS ON ARTICLES MADE FROM ZIRCONIUM ALLOYS

A method of ion-plasma application of corrosion-resistant film coatings on articles made from zirconium alloys includes placing articles in a planetary carousel mechanism, heating the articles, and ion-beam etching and surface activation of the articles using water-cooled unbalanced magnetrons. In addition, the surface of the articles is activated using an ion source which generates gas ions with an accelerating voltage of up to 5000 V and with feeding of a bias voltage to the articles. The coating is applied by using unbalanced and balanced magnetrons simultaneously with a residual induction of the magnetic field from 0.03 T to 0.1 T. The coating is applied to articles which are made from zirconium alloys and are placed vertically in a planetary carousel mechanism. The articles are heated in the coating application process to a temperature of 150-600° C., wherein the heaters are accommodated along the entire length of the articles. This produces corrosion-resistant film coatings of uniform thickness along the outer surface of articles made from zirconium alloys and raises productivity due to an increase in the discharge power density of magnetrons.

Method and apparatus for coating plastic bottles
11634809 · 2023-04-25 · ·

An apparatus for coating a PET container in a coating chamber includes a lance that introduces material and energy into the container while it is in the coating chamber. This results in a reaction that coats the bottle's interior with a silicon oxide. Before reaching the coating chamber, the bottle will have passed through a cooling system connected to coating chamber. The cooling system passes cooled gas through a feed, thereby cooling said bottle before it reaches the coating chamber.

ATMOSPHERIC PRESSURE REMOTE PLASMA CVD DEVICE, FILM FORMATION METHOD, AND PLASTIC BOTTLE MANUFACTURING METHOD

A plasma CVD device which comprises a substrate having a three-dimensional shape such as that of a bottle and which can form a coating on the surface of various substrates under atmospheric pressure, and a coating forming method are provided. This atmospheric pressure remote plasma CVD device is provided with a dielectric chamber which has a gas inlet, an inner space and a plasma outlet, and a plasma generation device which generates plasma in the inner space. The plasma outlet is provided with a nozzle that has an opening area smaller than the average cross-sectional area of the cross-sections perpendicular to the direction of gas flow in the inner space.

LOW TEMPERATURE SELECTIVE ETCHING OF SILICON NITRIDE USING MICROWAVE PLASMA

Embodiments disclosed herein include a method of etching a 3D structure. In an embodiment, the method comprises providing the 3D structure in a microwave plasma chamber. In an embodiment, the 3D structure comprises a substrate, and alternating layers of silicon oxide and silicon nitride over the substrate. In an embodiment, the method further comprises flowing a first gas into the microwave plasma chamber, where the first gas comprises sulfur and fluorine. In an embodiment, the method comprises flowing a second gas into the microwave plasma chamber, where the second gas comprises an inert gas. In an embodiment, the method further comprises striking a plasma in the microwave plasma chamber, and etching the silicon nitride, where an etching selectivity of silicon nitride to silicon oxide is 50:1 or greater.

COIL FILAMENT FOR PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION SOURCE

A vapor deposition source that includes a substantially vertical plate to which first and second filament posts are coupled. The vapor deposition source also includes a filament having a first end and a second end. The filament provides a substantially concentric source of electrons. The first end of the filament is connected to the first filament post and the second end of the filament is connected to the second filament post. The first end of the filament is substantially vertically aligned with the second end of the filament when the filament is connected to the first and second posts.