An apparatus to decouple RF signals from input signal conductors of a process chamber includes at least a first switch to decouple an energy storage element from an active element within a process station. In particular embodiments, while the first switch is in an opened position, a second switch located between a current generator and energy storage element is closed, thereby permitting the current generator to charge the energy storage element. In response to the energy storage element attaining a predetermined voltage, the first switch may be closed, and the second switch may be opened, thereby permitting current to be discharged from the energy storage element to the active element. In certain embodiments, the first and second switches are not permitted to simultaneously operate in a closed position, thereby preventing RF from being coupled from the process station to the current generator.

A semiconductor process system includes a process chamber with a lid. The system includes a heater positioned on the lid and a controller configured to control the heater. The controller operates the heater to provide a selected temperature distribution of the lid.

A plasma processing apparatus includes: a reaction tube provided in a processing container; a boat that holds a substrate, and is carried into and out from the reaction tube in order to form a film on the substrate; a plasma generation tube that communicates with the reaction tube, and generates plasma from a gas; a gas supply that supplies the gas to the plasma generation tube; electrode installation columns provided to sandwich the plasma generation tube therebetween, and including electrodes, respectively; an RF power supply that is connected to the electrodes, and supplies a radio frequency to the electrodes; a coil provided to be spaced apart from the electrodes in the electrode installation columns; and a DC power supply that is connected to the coil, and supplies a direct current to the coil.

A method for etching a tungsten silicide (WSix) layer during formation of a gate electrode in an integrated circuit is disclosed. The method uses an etchant gas comprising nitrogen gas (N.sub.2) and oxygen gas (O.sub.2) in a specified flow ratio. The etchant gas may also comprise chlorine gas (Cl.sub.2) and tetrafluoromethane (CF.sub.4). The selectivity of the etchant gas containing O.sub.2 for WSix versus polysilicon is much higher, which reduces overetching and provides more control in methods for producing a gate electrode. A gate electrode produced by such a method is also disclosed.

A film forming method of forming a carbon film includes: cleaning an interior of a processing container by using oxygen-containing plasma in a state in which no substrate is present inside the processing container; subsequently, extracting and removing oxygen inside the processing container by using plasma in the state in which no substrate is present inside the processing container; and subsequently, loading a substrate into the processing container and forming the carbon film on the substrate through plasma CVD using a processing gas including a carbon-containing gas, wherein the cleaning, the extracting and removing the oxygen, and the forming the carbon film are repeatedly performed.

In a vacuum processing apparatus including: a vacuum container including a processing chamber therein; a plasma formation chamber; plate members being arranged between the processing chamber and the plasma formation chamber; and a lamp and a window member being arranged around the plate members, in order that a wafer and the plate members are heated by electromagnetic waves from the lamp, a bottom surface and a side surface of the window member is formed of a member transmitting the electromagnetic waves therethrough.

An etching method includes preparing a substrate having an etching target portion formed on a silicon-containing portion, plasma-etching the etching target portion of the substrate into a predetermined pattern by plasma of a processing gas containing a CF-based gas, and removing a damage layer formed due to implantation of C and F into the silicon-containing portion exposed at a bottom of the predetermined pattern by the plasma etching. The removing of the damage layer includes forming an oxide of the damage layer by supplying oxygen-containing radicals and fluorine-containing radicals and oxidizing the damage layer with the oxygen-containing radicals while etching the damage layer with the fluorine-containing radicals, and removing the oxide by a radical treatment or a chemical treatment with a gas.

A semiconductor processing system processes semiconductor wafers in a process chamber. The process chamber includes semiconductor process equipment for performing semiconductor processes within the chamber. The process chamber includes a heat pipe integrated with one or more components of the process chamber. The heat pipe effectively transfers heat from within the chamber to an exterior of the chamber.

A method includes applying a bond layer of a first chemical composition to a first surface of a first metal body. The metal body is of a second chemical composition. The method further includes disposing a second metal body of the second chemical composition against the first metal body such that the bond layer is between the first surface of the first metal body and a second surface of the second metal body. The metal bodies are resistant to diffusion bonding. The bond layer facilitates diffusion bonding of the metal bodies. The method further includes heating the first metal body and the second metal body. The method further includes applying pressure to press the second metal body against the first metal body. The method further includes generating a diffusion bond between the metal bodies, responsive to the heating and the applying of pressure for a duration.

Exemplary semiconductor processing systems may include a remote plasma source. The remote plasma source may include a first plasma block segment defining an inlet to an internal channel of the first plasma block segment. The first plasma block segment may also define a cooling channel between the internal channel of the first plasma block segment and a first exterior surface of the first plasma block segment. The remote plasma source may include a second plasma block segment defining an outlet from an internal channel of the second plasma block segment. The second plasma block segment may also define a cooling channel between the internal channel of the second plasma block segment and a first exterior surface of the second plasma block segment. The systems may include a semiconductor processing chamber defining an inlet fluidly coupled with the outlet from the remote plasma source.