An ARC evaporator comprising: a cathode assembly comprising a cooling plate (11), a target (1) as cathode element, an electrode arranged for enabling that an arc between the electrode and the front surface (1A) of the target (1) can be established—a magnetic guidance system placed in front of the back surface (1 B) of the target (i) comprising means for generating one or more magnetic whereas: —the borders of the cathode assembly comprise a surrounding shield (15) made of ferromagnetic material, wherein the surrounding shield (15) has a total height (H) in the transversal direction, said total height (H) including a component (C) for causing a shielding effect of magnetic field lines extending in any longitudinal directions, establishing in this manner the borders of the cathode assembly as limit of the extension of the magnetic field lines in any longitudinal direction.

A plasma processing apparatus is provided. The apparatus comprises a chamber, a lower electrode, an upper electrode, a gas supply, an RF power supply and a circuit. The circuit is configured to provide a potential to the lower electrode and includes a first circuit and a second circuit. The first circuit has a rectifier, a capacitor, a first current path, and a second current path. In the first current path, the rectifier is electrically connected between the lower electrode and the capacitor, and the capacitor is electrically connected between the rectifier and the ground. In the second current path, the rectifier is electrically connected between the lower electrode and the ground. The rectifier is configured to allow a current to flow toward the capacitor in the first current path and to allow a current to flow toward the lower electrode in the second current path. The second circuit is electrically connected to the capacitor and is configured to provide a voltage generated in the capacitor.

A plasma processing system includes a plasma chamber having a substrate support, and a multi-zone gas injection upper electrode disposed opposite the substrate support. An inner plasma region is defined between the upper electrode and the substrate support. The multi-zone gas injection upper electrode has a plurality of concentric gas injection zones. A confinement structure, which surrounds the inner plasma region, has an upper horizontal wall that interfaces with the outer electrode of the upper electrode. The confinement structure has a lower horizontal wall that interfaces with the substrate support, and includes a perforated confinement ring and a vertical wall that extends from the upper horizontal wall to the lower horizontal wall. The lower surface of the upper horizontal wall, an inner surface of the vertical wall, and an upper surface of the lower horizontal wall define a boundary of an outer plasma region, which surrounds the inner plasma region.

A plasma processing, apparatus of an embodiment includes a chamber, an introducing part, a first power source, a holder, an electrode, and a second power source. The introducing pat introduces gas into the chamber. The first power source outputs a first voltage for generating ions from the gas. The holder holds a substrate. The electrode is opposite to the ions across the substrate, and has a surface not parallel to the substrate. The second power source applies a second voltage to the electrode. The second voltage has a frequency lower than the frequency of the first voltage and Introduces die ions to the substrate.

A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, and a ground electrode arranged in the vacuum container and grounded.

The present technology encompasses plasma sources including a first plate defining a first plurality of apertures arranged in a first set of rows. The first plate may include a first set of electrodes extending along a separate row of the first set of rows. The plasma sources may include a second plate defining a second plurality of apertures arranged in a second set of rows. The second plate may include a second set of electrodes extending along a separate row of the second set of rows. Each aperture of the second plurality of apertures may be axially aligned with an aperture of the first plurality of apertures. The plasma sources may include a third plate positioned between the first plate and the second plate. The third plate may define a third plurality of apertures.

A plasma processing apparatus includes a stage provided in a processing container, and an upper electrode. The upper electrode includes a dielectric plate facing the stage, and a conductor formed on a surface of the dielectric plate opposite to a surface of the dielectric plate facing the stage. The dielectric plate includes a central portion, an outer peripheral portion, and an intermediate portion between the central portion and the outer peripheral portion. The intermediate portion has a thickness larger than the thicknesses of the central portion and the outer peripheral portion.

Gas discharge tube having glass seal. In some embodiments, a gas discharge tube can include an insulator layer having first and second sides and defining an opening, and first and second electrodes that cover the opening on the first and second sides of the insulator layer, respectively. The gas discharge tube can further include a first glass layer implemented between the first electrode and the first side of the insulator layer, and a second glass layer implemented between the second electrode and the second side of the insulator layer, such that the first and second glass layers provide a seal for a chamber defined by the opening and the first and second electrodes.

There is provided a plasma processing device comprising: a chamber; an upper electrode; a showerhead provided below the upper electrode, which divides an internal space of the chamber into a first space between the upper electrode and the showerhead and a second space below the showerhead, and provides a plurality of introduction ports for introducing a gas into the second space and a plurality of openings penetrating the showerhead so that the first space and the second space are in communication with each other; a substrate support portion configured to support a substrate in the second space; an ion trap provided between the upper electrode and the showerhead, wherein the ion trap provides a plurality of through holes arranged not to align with the plurality of openings of the showerhead; a first gas supply portion configured to supply a gas to a region in the first space between the upper electrode and the ion trap; a second gas supply portion configured to supply the showerhead with a gas to be introduced from the plurality of introduction ports into the second space; a power source configured to produce a power for generating plasma, and connected to the upper electrode; and a switch configured to switchably connect the showerhead to one of a ground and the upper electrode.

A method of processing includes directing an electron beam comprising ballistic electrons from an electron source towards a peripheral region of a substrate to be processed. The peripheral region surrounds a central region of the substrate. The electron beam may be directed such that the ballistic electrons impinge on the peripheral region and not on the central region of the substrate. The ballistic electrons may stimulate chemical reactions on the substrate. The method may include placing the substrate on a substrate holder disposed within a vacuum chamber. The method may also include generating the electron beam from a plasma in the vacuum chamber. The method may further include processing the substrate with ions from the plasma.