A plasma processing apparatus includes: a reaction tube provided in a processing container; a boat that holds a substrate, and is carried into and out from the reaction tube in order to form a film on the substrate; a plasma generation tube that communicates with the reaction tube, and generates plasma from a gas; a gas supply that supplies the gas to the plasma generation tube; electrode installation columns provided to sandwich the plasma generation tube therebetween, and including electrodes, respectively; an RF power supply that is connected to the electrodes, and supplies a radio frequency to the electrodes; a coil provided to be spaced apart from the electrodes in the electrode installation columns; and a DC power supply that is connected to the coil, and supplies a direct current to the coil.

An electron cyclotron resonance (ECR) thruster includes a magnetic field source configured to generate a magnetic field, a thruster body that defines a chamber, the thruster body being disposed relative to the magnetic field source such that the magnetic field is present in the chamber and such that a magnetic nozzle is established, an antenna configured to propagate radio frequency (RF) power within the chamber, and a waveform generator coupled to the antenna to generate an RF waveform for the RF power. The waveform generator is configured such that the RF waveform includes multiple frequencies.

In a plasma processing apparatus including a processing chamber disposed in a vacuum chamber, a sample stage disposed in the processing chamber and on which a sample is placed, in the vacuum chamber, a second shower plate disposed above the sample stage, a first shower plate disposed above the second shower plate, and a dielectric window disposed above the first shower plate, first gas is supplied from a first gas supply unit to a space between the dielectric window and the first shower plate, and second gas is supplied from a second gas supply unit to a space between the first shower plate and the second shower plate.

A diamond and a preparation method and use. The method for preparing diamond comprises: processing a substrate material of a substrate holder to obtain a surface that is easily separated from diamond films using a plasma chemical vapor deposition method to form a diamond film layer on the surface of the substrate holder, wherein the plasma chemical vapor deposition uses a multi-energy sources coupled plasma; post-processing the diamond film layer to remove impurity material on the diamond surface and a nucleation layer and/or stress layer with inconsistent properties of a main body of the diamond film. The method has the advantages of controllable thickness, controllable quality, controllable cost, etc., and lays the foundation for diamond in the fields of cutting tools and heat sinks.

In order to provide a plasma processing apparatus capable of easily controlling a plasma density distribution on a processing target substrate, a plasma processing apparatus includes: a microwave generating source; a waveguide path including waveguides that transmit a microwave generated by the microwave generating source to a processing chamber; the processing chamber that includes therein a placing table for placing the processing target substrate and is connected to the waveguide path; a gas introduction unit that introduces gas into the processing chamber; and an exhaust unit that discharges the gas introduced into the processing chamber to the outside of the processing chamber, in which a portion of the waveguide path connected to the processing chamber includes a plurality of waveguides formed coaxially.

Provided is a plasma processing apparatus that controls the radical distribution on a wafer and prevents particles from flying up on an upper surface of a second shielding plate during isotropic etching. The plasma processing apparatus includes a processing chamber 106 in which a sample is subjected to plasma-processing, a radio frequency power source 113 that supplies radio frequency power for generating plasma, a sample stage 120 on which the sample is placed, and a first flat plate 115 arranged above the sample stage 120 and having a plurality of through holes 170, a second flat plate 116 arranged between the first flat plate 115 and the sample stage 120 and facing the first flat plate 115, and a gas supply port 150 arranged on a side surface of the processing chamber 106 between the first flat plate 115 and the second flat plate 116 to supply gas. The through holes 170 are arranged outside a portion separated from a center by a predetermined distance.

In order to enable plasma density distribution control having a high degree of freedom to solve problems of not only in-plane uniformity of an etching processing but also a reduction of a charge-up damage, a plasma processing apparatus includes: a vacuum chamber provided with a plasma processing chamber that plasma-processes a substrate inside and is able to exhaust the inside of this plasma processing chamber to a vacuum; and a microwave power supply unit that is provided with a microwave source and a circular waveguide and supplies, via the circular waveguide, a microwave power oscillated from the microwave source to the vacuum chamber, in which the microwave power supply unit is configured by arranging a plurality of waveguides, which are coaxially and concentrically arranged with the circular waveguide and have different dielectric constants inside, between the circular waveguide and the vacuum chamber.

In a method of manufacturing a semiconductor device, a mask pattern is formed over a target layer to be etched, and the target layer is etched by using the mask pattern as an etching mask. The etching is performed by using an electron cyclotron resonance (ECR) plasma etching apparatus, the ECR plasma etching apparatus includes one or more coils, and a plasma condition of the ECR plasma etching is changed during the etching the target layer by changing an input current to the one or more coils.

A plasma processing apparatus includes a sample stage on which a sample is placed an inside of the processing chamber; a dielectric membrane forming an upper surface portion of the sample stage; a plurality of film-shaped electrodes which is disposed in the dielectric membrane, to which a DC power from a DC power supply is supplied and in which an electrostatic force for attracting the sample is formed; and a bias electrode (ESC base metal) disposed below the dielectric membrane and supplied with radio frequency power for forming a radio frequency bias potential from a radio frequency power supply during the processing of the sample. The plurality of electrodes includes a first electrode to which a positive polarity is imparted and a second electrode to which a negative polarity is imparted, wherein the first electrode and the second electrode are electrically connected to a corresponding positive electrode terminal and a corresponding negative electrode terminal of the DC power supply through the corresponding low pass filter circuits (LPF).

In a method of manufacturing a semiconductor device, a mask pattern is formed over a target layer to be etched, and the target layer is etched by using the mask pattern as an etching mask. The etching is performed by using an electron cyclotron resonance (ECR) plasma etching apparatus, the ECR plasma etching apparatus includes one or more coils, and a plasma condition of the ECR plasma etching is changed during the etching the target layer by changing an input current to the one or more coils.