A discharge method includes discharging discharge products including a first discharge gas and solid by-products from a process chamber, in which a substrate processing process is performed in a vacuum state, into an inside of a collection device, collecting the solid by-products in the collection device, introducing a portion of a second discharge gas discharged from a load lock chamber into the collection device, and vaporizing the solid by-products in the collection device and discharging vaporized solid by-products to an outside of the collection device.

A plasma-generating nozzle and a plasma device including the plasma-generating nozzle are provided. The plasma-generating nozzle includes a plasma-generating channel, a cooling channel at least partially surrounding the plasma-generating channel, and a pair of electrodes partially disposed in the plasma-generating channel for generating plasma. The plasma device includes a housing enclosing a plasma treatment space and a component space, and the plasma-generating nozzle removable disposed in the plasma treatment space.

One or more embodiments described herein relate to abatement systems for reducing Br.sub.2 and Cl.sub.2 in semiconductor processes. In embodiments described herein, semiconductor etch processes are performed within process chambers. Thereafter, fluorinated greenhouse gases (F-GHGs), HBr, and Cl.sub.2 gases exit the process chamber and enter a plasma reactor. Reagent gases are delivered from a reagent gas delivery apparatus to the plasma reactor to mix with the process gases. Radio frequency (RF) power is applied to the plasma reactor, which adds energy and “excites” the gases within the process chamber. When HBr is energized, it forms Br.sub.2. Br.sub.2 and Cl.sub.2 are corrosive and toxic. However, the addition of H.sub.2O in the plasma reactor quenches the Br.sub.2 and Cl.sub.2 emissions, as the H atoms recombine with the Br atoms and the Cl atoms to form HBr and HCl. HBr and HCl are readily water-soluble and removed through a wet scrubber.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a process chamber provided with a reaction space and having at least one insulation member exposed to the reaction space; a substrate support member for supporting a substate at the reaction space; a gas supply member for selectively supplying a passivation gas or a process gas to the reaction space; a plasma source for exciting the passivation gas or the process gas to a plasma; and a controller for controlling the gas supply member and the plasma source, and wherein the controller controls the gas supply member and the plasma source so the passivation gas is supplied to the reaction space and a supplied passivation gas is excited to the plasma, in a state at which the substrate is not taken into the reaction space.

Proposed is a powder removing apparatus using a screw cylinder for a gas processing facility, in which the powder removing apparatus has a structure in which a scraper is coupled to the screw cylinder that allows a piston rod to be moved forward while being rotated in one direction and to be moved backward while being rotated in a reverse direction according to a supply direction of fluid, thereby allowing the powder adhered to an inner circumferential surface of a pipeline of the gas processing facility or an inner wall surface of the gas processing facility to be easily and efficiently removed. According to an embodiment of the present disclosure, the powder removing apparatus includes the screw cylinder and a scraper.

Provided is a technique including: a processing chamber that processes a substrate; a first gas supplier that supplies a metal-containing gas into the processing chamber; a second gas supplier that supplies a first oxygen-containing gas into the processing chamber; and an exhauster including a gas exhaust pipe and a trap that collects a component of the metal-containing gas contained in an exhaust gas using plasma, the exhauster discharging the exhaust gas from the processing chamber.

One or more embodiments described herein relate to abatement systems for reducing Br.sub.2 and Cl.sub.2 in semiconductor processes. In embodiments described herein, semiconductor etch processes are performed within process chambers. Thereafter, fluorinated greenhouse gases (F-GHGs), HBr, and Cl.sub.2 gases exit the process chamber and enter a plasma reactor. Reagent gases are delivered from a reagent gas delivery apparatus to the plasma reactor to mix with the process gases. Radio frequency (RF) power is applied to the plasma reactor, which adds energy and “excites” the gases within the process chamber. When HBr is energized, it forms Br.sub.2. Br.sub.2 and Cl.sub.2 are corrosive and toxic. However, the addition of H.sub.2O in the plasma reactor quenches the Br.sub.2 and Cl.sub.2 emissions, as the H atoms recombine with the Br atoms and the Cl atoms to form HBr and HCl. HBr and HCl are readily water-soluble and removed through a wet scrubber.

An apparatus is for trapping multiple reaction by-products for a semiconductor process, in which a trapping region is divided by a difference in vertical temperature distribution according to a distance spaced apart from a heater and by structures for switching flow path directions and generating multiple vortices using a trapping structure, and reaction by-product mixtures contained in a gas, which is discharged after a process of depositing multiple different thin film layers is performed in a process chamber during a semiconductor manufacturing process, is trapped by a single trapping apparatus, such that a reaction by-product, which is aggregated in the form of a thin film in a relatively high-temperature region, is trapped by a first trapping part in an upper region, and a reaction by-product, which is aggregated in the form of powder in a relatively low-temperature region, is trapped by a second trapping part in a lower region.

Methods and apparatus for passivating a target are provided herein. For example, a method includes a) supplying an oxidizing gas into an inner volume of the process chamber; b) igniting the oxidizing gas to form a plasma and oxidize at least one of a target or target material deposited on a process kit disposed in the inner volume of the process chamber; and c) performing a cycle purge comprising: c1) providing air into the process chamber to react with the at least one of the target or target material deposited on the process kit; c2) maintaining a predetermined pressure for a predetermined time within the process chamber to generate a toxic by-product caused by the air reacting with the at least one of the target or target material deposited on the process kit; and c3) exhausting the process chamber to remove the toxic by-product.

An apparatus for trapping an exhaust material from a substrate-processing process includes: a cyclone configured to provide the exhaust material with a swirling flow, wherein the exhaust material is discharged from the substrate-processing process using a reaction gas; an atomization module for providing the cyclone with a mist to convert the exhaust material into a powder through a wet oxidation reaction, and a collector configured to collect the powder.