A macroparticle filter device for cathodic arc evaporation, to be placed between at least one arc evaporation source and at least one substrate exhibiting at least a surface to be coated with material evaporated from a cathode of the arc evaporation source in a vacuum coating chamber. The macroparticle filter device includes one or more filter components that can prevent macroparticles emitted by the cathode during cathodic arc evaporation to arrive the substrate surface to be coated. The at least one component is provided as one or more flexible sheets that block the lineal way of the macroparticles from the cathode to the substrate surface to be coated. Further a method for utilizing the macroparticle filter device is presented.

A film forming apparatus has a process chamber and a processing unit provided in the process chamber and forming adhesive film. The surface of the inner walls of the process chamber is formed of a material having a large getter effect on gas or water (H.sub.2O) remaining in the process chamber.

A chamber component for a processing chamber is disclosed herein. In one embodiment, a chamber component for a processing chamber includes a component part body having unitary monolithic construction. The component part body has a textured surface. The textured surface includes a plurality of independent engineered macro features integrally formed with the component part body. The engineered macro features include a macro feature body extending from the textured surface.

This disclosure relates to a plasma generator including a porous ceramic dielectric. More specifically, this disclosure relates to a plasma generator for air purification capable of effectively generating ozone for removing bacteria, viruses, etc., and minimizing pressure loss while increasing air purification capacity by including a porous ceramic dielectric coated with an antibacterial material.

A cleaning method removes a silicon oxide film by plasma from a member that is provided in a processing container of a plasma processing apparatus and having the silicon oxide film formed on its surface. The cleaning method includes: supplying a processing gas into the processing container; generating plasma of the processing gas that is supplied into the processing container; and applying bias power that draws ions in the plasma of the processing gas to the member. A ratio of a value of the bias power to a pressure in the processing container is 1.0 W/mTorr or less.

A sputtering chamber component including a front surface, a back surface opposite the front surface, and a sputter trap formed on at least a portion of the back surface, and a coating of metallic particles formed on the sputter trap. The coating has a thickness from about 0.025 mm to about 2.54 mm (0.001 inches to about 0.1 inches) and is substantially free of impurities, and the particles of the coating are substantially diffused.

An apparatus is for trapping multiple reaction by-products for a semiconductor process, in which a trapping region is divided by a difference in vertical temperature distribution according to a distance spaced apart from a heater and by structures for switching flow path directions and generating multiple vortices using a trapping structure, and reaction by-product mixtures contained in a gas, which is discharged after a process of depositing multiple different thin film layers is performed in a process chamber during a semiconductor manufacturing process, is trapped by a single trapping apparatus, such that a reaction by-product, which is aggregated in the form of a thin film in a relatively high-temperature region, is trapped by a first trapping part in an upper region, and a reaction by-product, which is aggregated in the form of powder in a relatively low-temperature region, is trapped by a second trapping part in a lower region.

A film forming apparatus configured to form a metal oxide film or a metal nitride film through atomic layer deposition by alternately introducing metal compound gas and an OH radical or an NH radical in a reaction container. The film forming apparatus including: the reaction container; and at least one plasma generator provided outside the reaction container and configured to generate a first plasma including an oxygen radical or a nitrogen radical when oxygen or nitrogen is supplied and generate a second plasma including a hydrogen radical when hydrogen is supplied. The OH radical is generated by collision between the oxygen radical and the hydrogen radical or the NH radical is generated by collision between the nitrogen radical and the hydrogen radical in a downstream region from an outlet of the at least one plasma generator to an inner space of the reaction container.

The invention relates to a filter for filtering particles from a plasma plume. The filter includes a housing with two pass-through openings arranged in the housing wall and forming a pass-through channel for passing at least part of the plasma plume through the housing, which pass-through channel extends from one side of the housing to an opposite side of the housing, at least one primary blade arranged at a distance from and rotatable around a rotation axis, which rotation axis is parallel and spaced apart from the center line of the pass-through channel, with the path of the at least one primary blade intersecting with the pass-through channel and with the at least one primary blade having a contact surface for contact with the plasma plume, which contact surface is facing in the direction of the rotation direction, and a drain channel connecting to a drain opening arranged in the housing wall. A line extending perpendicular from both the center line of the pass-through channel and a radial line extending from the rotation axis through the center line of the pass-through channel and through the path of the at least one primary blade, extends through the drain opening.

An apparatus for forming a film on a substrate includes: a processing container in which a reaction gas is supplied to a surface of the substrate; a stage installed in the processing container, configured to place the substrate and including a heater; a lifting shaft connected to an external lifting mechanism via a through port formed in the processing container; a casing installed between the processing container and the lifting mechanism and covering the lifting shaft; a lid member disposed to surround the lifting shaft with a gap interposed between the lifting shaft and the lid member, and installed in the processing container; a purge gas supplier configured to supply a purge gas into the casing; and a guide member disposed at a position facing the gap that opens toward an interior of the processing container and including a guide surface configured to guide the purge gas.