In time-series data indicating light emission of plasma when plasma processing is carried out on a sample by generating the plasma, an analysis apparatus creates combinations of a plurality of light emission wavelengths of elements and a plurality of time intervals within a plasma processing interval and calculates, for each of the combinations of the wavelengths and the time intervals, a correlation between an average value of light emission intensity and the number of times the plasma processing is carried out on the samples for each of the combinations of the wavelengths and the time intervals that have been created. Thereafter, the data analysis apparatus selects, as a combination of the wavelength and the time interval used to observe or control the plasma processing, a combination of a wavelength of light emitting from a specific element and a specific time interval having a maximum correlation.

Provided is an inductively coupled plasma spectrometric system for measuring an emission state of plasma into which a measurement target sample is fed, the inductively coupled plasma spectrometric system including: a spectrometer configured to resolve light emitted in a measurement region set in the plasma into a plurality of wavelength components; a detection device configured to detect a spatial distribution of the resolved light; and a measuring device configured to measure the detected spatial distribution at every measurement unit time, the measurement unit time being at least shorter than time required for the sample to pass through the measurement region.

An apparatus to determine occurrence of an anomalous plasma event occurring at or near a process station of a multi-station integrated circuit fabrication chamber is disclosed. In particular embodiments, optical emissions generated responsive to the anomalous plasma event may be detected by at least one photosensor of a plurality of photosensors. A processor may cooperate with the plurality of photosensors to determine that the anomalous plasma event has occurred at or near by a particular process station of the multi-station integrated circuit fabrication chamber.

A plasma processing apparatus and method with an improved processing yield, the plasma processing apparatus including detector configured to detect an intensity of a first light of a plurality of wavelengths in a first wavelength range and an intensity of a second light of a plurality of wavelengths in a second wavelength range, the first light being obtained by receiving a light which is emitted into the processing chamber from a light source disposed outside the processing chamber and which is reflected by an upper surface of the wafer, and the second light being a light transmitted from the light source without passing through the processing chamber; and a determination unit configured to determine a remaining film thickness of the film layer by comparing the intensity of the first light corrected using a change rate of the intensity of the second light.

The present invention discloses a device for measuring gas temperature in plasma, including: a vacuum chamber, a fiber optic temperature sensor, a quartz tube, a circulator, a spectrometer, a broadband light source and a computer. One end of the quartz tube is inserted into the vacuum chamber. The fiber optic temperature sensor is located in the plasma in the vacuum chamber and fixed to the quartz tube. The fiber optic temperature sensor is connected to the circulator by means of an optical fiber passing through the quartz tube. The circulator is connected to the broadband light source and the spectrometer through optical fibers, respectively. The spectrometer is electrically connected to the computer which is configured to read and record spectra collected by the spectrometer.

In a method of controlling a plasma beam of a plasma etcher a flow rate controller of the plasma etcher is set to generate one or more flow rates of an etching gas corresponding to one or more plasma beams of the plasma etcher. The emitted light generated by plasma discharge corresponding to the one or more plasma beams of the plasma etcher is monitored. The flow rate controller is calibrated based on the one or more flow rates and a corresponding emitted light of the plasma discharge.

Plasma applications are disclosed that operate with argon or helium at atmospheric pressure, and at low temperatures, and with high concentrations of reactive species in the effluent stream. Laminar gas flow is developed prior to forming the plasma and at least one of the electrodes can be heated which enables operation at conditions where the argon or helium plasma would otherwise be unstable and either extinguish, or transition into an arc. The techniques can be employed to clean and activate a metal substrate, including removal of oxidation, thereby enhancing the bonding of at least one other material to the metal.

Proposed are non-invasive diagnostic method and apparatus for plasma processes in which plasma processes can be monitored in real time by measuring a surface wave resonance frequency generated in plasma or a sheath on the basis of a surface wave resonance principle. The diagnostic method may include a step (S10) of installing at least one probe on one side of an electrostatic chuck (ESC) or on an inner wall of a chamber, a step (S20) of emitting a high frequency onto the plasma or the sheath by the probe, and a step (S30) of detecting a frequency reflected from the plasma or the sheath by the probe. In addition, the diagnostic method may include the step (S40) of extracting a reflection spectrum, a step (S50) of extracting the surface wave resonance frequency, and a step (S60) of extracting electron density or uniformity of the plasma.

An embodiment low contamination chamber includes a gas inlet, an adjustable top electrode, and an adjustable bottom electrode. The low contamination chamber is configured to adjust a distance between the adjustable top electrode and the adjustable bottom electrode in response to a desired density of plasma and a measured density of plasma measured between the adjustable top electrode and the adjustable bottom electrode during a surface activation process. The low contamination chamber further includes an outlet.

A substrate processing method includes: providing a substrate including a silicon-containing film in a chamber; supplying a processing gas including HF gas into the chamber; etching the silicon-containing film with plasma generated from the processing gas, thereby forming a recess in the silicon-containing film; and controlling a partial pressure of the HF gas to decrease the partial pressure of the HF gas with an increase of an aspect ratio of the recess.