A plasma processing apparatus includes: a first electrode on which a substrate is placed; a plasma generation source that generates plasma; a bias power supply that supplies bias power to the first electrode; a source power supply that supplies source power to the plasma generation source; and a controller. The controller performs a control such that a first state and a second state of the source power are alternately applied in synchronization with a high frequency cycle of the bias power, or a phase within one cycle of a reference electrical state indicating any one of a voltage, a current and an electromagnetic field measured in a power feed system of the bias power, and performs a control to turn OFF the source power at least at a negative side peak of the phase within one cycle of the reference electrical state.

Processing methods and apparatus for depositing a protective layer on internal surfaces of a reaction chamber are provided. One method may include depositing, while no wafers are present in the reaction chamber having interior surfaces, a first layer of protective material onto the interior surfaces, the interior surfaces comprising a first material, processing, after the depositing the first layer, a portion of a batch of wafers within a reaction chamber, measuring an amount of the first material in the reaction chamber during processing the portion of the batch of wafers, or on one of the wafers in the portion of the batch of wafers, determining that the first amount exceeds a threshold, and depositing, in response to determining that the first amount exceeds the threshold and while no wafers are present in the reaction chamber, a second layer of protective material onto the interior surfaces of the reaction chamber.

A method of detecting and classifying anomalies during semiconductor processing includes executing a wafer recipe a semiconductor processing system to process a semiconductor wafer; monitoring sensor outputs from a sensors that monitor conditions associated with the semiconductor processing system; providing the sensor outputs to models trained to identify when the conditions associated with the semiconductor processing system indicate a fault in the semiconductor wafer; receiving an indication of a fault from at least one of the models; and generating a fault output in response to receiving the indication of the fault.

Methods and apparatus for surface profiling and texturing of chamber components for use in a process chamber, such surface-profiled or textured chamber components, and method of use of same are provided herein. In some embodiments, a method includes measuring a parameter of a reference substrate or a heated pedestal using one or more sensors and modifying a surface of a chamber component physically based on the measured parameter.

A white light illumination source can illuminate a region of a substrate to be plasma etched with an incident light beam. A camera takes successive images of the region being illuminated during a plasma etch process. Image processing techniques can be applied to the images so as to identify a location of at least one feature on the substrate and to measure a reflectivity signal at the location. The plasma etch process can be modified in response to the measured reflectivity signal at the location.

The invention provides a method and system to remotely monitor a plasma (3) comprising a magnetic field antenna (2) positioned in the near electromagnetic field of a coupled plasma source wherein the magnetic field antenna is a magnetic loop antenna placed in the near electromagnetic field and measure near field signals emitted from the plasma source. A radio system (1) is utilised to analyse the low power signal levels across a wide frequency band. Plasma paramaters such as series, or geometric, resonance plasma and electron-neutral collision frequencies are evaluated via a fitting of resonant features present on higher harmonics of the driving frequency to identify arcing, pump or matching failure events, common in fabrication plasma systems.

This disclosure describes systems, methods, and apparatuses for a power system comprising a generator connected to a solid-state match network and a synchronization module connected to the generator and the solid-state match network, wherein the synchronization module is configured to synchronize a power delivered by the generator to the match network with the opening and closing of switches in the solid-state matching network.

Provided is a generator including a power amplifier, at least one sampler, an RF output, a signal generator, a controller including a digital control portion and an analogue control portion, an analogue feedback path between the at least one sampler and the controller enabling an analogue signal representation of a signal to be provided to the controller, and a digital feedback path between the at least one sampler and the controller enabling a digital signal representation of the signal to be provided to the controller. The controller is configured to adjust the RF signal at the RF output from a first state into a second state based on the analogue signal representation and/or the digital signal representation.

A plasma processing apparatus includes a mounting table, an acquisition unit, a calculation unit, and an elevation control unit. The mounting table mounts thereon a target object as a plasma processing target. The elevation mechanism vertically moves a focus ring surrounding the target object. The acquisition unit acquires state information indicating a measured state of the target object. The calculation unit calculates a height of the focus ring at which positional relation between an upper surface of the target object and an upper surface of the focus ring satisfies a predetermined distance based on the state of the target object that is indicated by the state information acquired by the acquisition unit. The elevation control unit controls the elevation mechanism to vertically move the focus ring to the height calculated by the calculation unit.

Embodiments of this disclosure describe a feedback loop that can be used to maintain a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate. The system described herein consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.