The disclosure includes an outer electrode and an inner electrode. The outer electrode defines an inner volume and is configured to receive injected electrons through at least one aperture. The inner electrode positioned in the inner volume. The outer electrode and inner electrode are configured to confine the received electrons in orbits around the inner electrode in response to an electric potential between the outer electrode and the inner electrode. The apparatus does not include a component configured to generate an electron-confining magnetic field.

The disclosure includes an outer electrode and an inner electrode. The outer electrode defines an inner volume and is configured to receive injected electrons through at least one aperture. The inner electrode positioned in the inner volume. The outer electrode and inner electrode are configured to confine the received electrons in orbits around the inner electrode in response to an electric potential between the outer electrode and the inner electrode. The apparatus does not include a component configured to generate an electron-confining magnetic field.

A vacuum exhaust method is for decreasing a pressure in a processing chamber in which a mounting table configured to mount thereon a substrate is provided by using a gas exhaust unit. The vacuum exhaust method includes mounting a non-evaporated getter (NEG) on the mounting table, and adsorbing an active gas in the processing chamber on the NEG mounted on the mounting table. In the adsorbing the active gas, the NEG is maintained at a predetermined temperature.

A vacuum exhaust method is for decreasing a pressure in a processing chamber in which a mounting table configured to mount thereon a substrate is provided by using a gas exhaust unit. The vacuum exhaust method includes mounting a non-evaporated getter (NEG) on the mounting table, and adsorbing an active gas in the processing chamber on the NEG mounted on the mounting table. In the adsorbing the active gas, the NEG is maintained at a predetermined temperature.

A vacuum pumping system comprising: a high pressure getter pump configured to operate from an initial pressure of between 10 and 10.sup.−2 mbar to a second pressure between 10.sup.−3 mbar and 10.sup.−6 mbar and at least one high vacuum pump configured to operate at higher vacuums than the high pressure getter pump, the two pumps being mounted on a same flange, the flange being configured to mount the vacuum pumping system to a vacuum chamber.

A vacuum pumping system comprising: a high pressure getter pump configured to operate from an initial pressure of between 10 and 10.sup.−2 mbar to a second pressure between 10.sup.−3 mbar and 10.sup.−6 mbar and at least one high vacuum pump configured to operate at higher vacuums than the high pressure getter pump, the two pumps being mounted on a same flange, the flange being configured to mount the vacuum pumping system to a vacuum chamber.

A system of measuring and correcting for distortions in homodyne systems and a method for operating a data processing system to provide an estimate of distortions in homodyne systems are disclosed. The method for operating a data processing system to provide an estimate of a distortion introduced by a homodyne system when the homodyne system processes a time a multi-tone time domain input signal, x(t), to obtain a time domain output signal, y(t) includes receiving a frequency spectrum, X(f), of the multi-tone time domain input signal, x(t) and measuring an output frequency spectrum, Y(f), when the homodyne system operates on x(t). A plurality of parameters of a model that represents a linear frequency response of the homodyne system when operating on X(f) to arrive at Y(f) by fitting the model to Y(f) and X(f) is determined, and the model is applied to X(f) and Y(f) to estimate the distortions.

A system of measuring and correcting for distortions in homodyne systems and a method for operating a data processing system to provide an estimate of distortions in homodyne systems are disclosed. The method for operating a data processing system to provide an estimate of a distortion introduced by a homodyne system when the homodyne system processes a time a multi-tone time domain input signal, x(t), to obtain a time domain output signal, y(t) includes receiving a frequency spectrum, X(f), of the multi-tone time domain input signal, x(t) and measuring an output frequency spectrum, Y(f), when the homodyne system operates on x(t). A plurality of parameters of a model that represents a linear frequency response of the homodyne system when operating on X(f) to arrive at Y(f) by fitting the model to Y(f) and X(f) is determined, and the model is applied to X(f) and Y(f) to estimate the distortions.

A cold-atom cell is formed by machining a block of silicon to define sites for an atom source chamber, an atom manipulation chamber, and an ion-pump chamber. A polished silicon panel is frit-bonded to an unpolished (due to machining) chamber wall (which would be difficult and costly to polish). The polished panel can then serve as a reflector or a sight for anodic bonding. A solid-phase atom source provides for vapor phase atoms in the source chamber. The source chamber also includes carbon and gold to regulate the atom pressure by sorbing and desorbing thermal atoms. The atom manipulation chamber includes components for magneto-optical trap and an atom chip, e.g., for forming a Bose-Einstein condensate. The ion-pump chamber serves as the site for an ion pump. By integrating the ion pump into the body of the cold-atom cell, a more compact, reliable, and robust cold-atom cell is achieved. In addition to the embodiment just described, several variations and alternatives are presented and within the scope of the claims.

A cold-atom cell is formed by machining a block of silicon to define sites for an atom source chamber, an atom manipulation chamber, and an ion-pump chamber. A polished silicon panel is frit-bonded to an unpolished (due to machining) chamber wall (which would be difficult and costly to polish). The polished panel can then serve as a reflector or a sight for anodic bonding. A solid-phase atom source provides for vapor phase atoms in the source chamber. The source chamber also includes carbon and gold to regulate the atom pressure by sorbing and desorbing thermal atoms. The atom manipulation chamber includes components for magneto-optical trap and an atom chip, e.g., for forming a Bose-Einstein condensate. The ion-pump chamber serves as the site for an ion pump. By integrating the ion pump into the body of the cold-atom cell, a more compact, reliable, and robust cold-atom cell is achieved. In addition to the embodiment just described, several variations and alternatives are presented and within the scope of the claims.