A plasma light with at least one non-rotating light bulb is disclosed. The light includes a conducting cavity structure with a radiation source input port and a light bulb. The geometry of the cavity is designed to generate electrical fields with time-dependent geometrical designed orientation within parts of the light bulb, while the direction of the radiation fields from the radiation source port caused by a microwave generator to the input port fields is stationary.

A light-emitting plasma lamp bulb for solar ultraviolet simulation includes a bulb cover having a spherical shape or a rod shape through which ultraviolet rays are transmittable, discharge gas contained in the bulb cover, and a first light-emitting material and a second light-emitting material, wherein the first light-emitting material includes at least one of mercury (Hg) and mercury iodide (HgI.sub.2), and the second light-emitting material includes sulfur (S.sub.8), wherein light emitted from the bulb has a maximum optical power intensity in a range of 395 to 455 nm which is an ultraviolet-visible boundary region, wherein, when compared using a same ultraviolet dose in an ultraviolet region of 290 to 400 nm, an integrated intensity of a visible and infrared region of 400 to 850 nm is equal to or less than of an integrated intensity of a visible and infrared region of a standard solar spectrum (ASTM G173, AM 1.5G).

An envelope of an ultraviolet (UV) bulb comprises a tube of UV transmissive material configured to contain a UV emissive material and a plasma resistant coating on an inner surface of the tube wherein the coating has been deposited by atomic layer deposition (ALD) and is the only material attached to the inner surface of the tube. The tube can be an endless tube having a circular shape and the coating can be an ALD aluminum oxide coating. The UV transmissive material can comprise quartz or fused silica and the tube can have a wall thickness of about 1 to about 2 mm. The coating can have a thickness of no greater than about 200 nm such as about 120 nm to 160 nm. The circular tube can be formed into a torus shape which can have an outer diameter of about 200 mm and the tube itself can have an outer diameter of about 30 mm. The ALD aluminum oxide coating can be a pinhole free conformal coating. A UV bulb comprising the envelope can contain mercury and inert gas such as argon with pressure inside the UV bulb below 100 Torr. A method of curing a film on a semiconductor substrate, comprises supporting a semiconductor substrate in a curing chamber and exposing a layer on the semiconductor substrate to UV radiation produced by the UV bulb. Other uses include semiconductor substrate surface cleaning or sterilization of fluids and objects.

An envelope of an ultraviolet (UV) bulb comprises a tube of UV transmissive material configured to contain a UV emissive material and a plasma resistant coating on an inner surface of the tube wherein the coating has been deposited by atomic layer deposition (ALD) and is the only material attached to the inner surface of the tube. The tube can be an endless tube having a circular shape and the coating can be an ALD aluminum oxide coating. The UV transmissive material can comprise quartz or fused silica and the tube can have a wall thickness of about 1 to about 2 mm. The coating can have a thickness of no greater than about 200 nm such as about 120 nm to 160 nm. The circular tube can be formed into a torus shape which can have an outer diameter of about 200 mm and the tube itself can have an outer diameter of about 30 mm. The ALD aluminum oxide coating can be a pinhole free conformal coating. A UV bulb comprising the envelope can contain mercury and inert gas such as argon with pressure inside the UV bulb below 100 Torr. A method of curing a film on a semiconductor substrate, comprises supporting a semiconductor substrate in a curing chamber and exposing a layer on the semiconductor substrate to UV radiation produced by the UV bulb. Other uses include semiconductor substrate surface cleaning or sterilization of fluids and objects.

A plasma light with at least one non-rotating light bulb is disclosed. The light includes a conducting cavity structure with a radiation source input port and a light bulb. The geometry of the cavity is designed to generate electrical fields with time-dependent geometrical designed orientation within parts of the light bulb, while the direction of the radiation fields from the radiation source port caused by a microwave generator to the input port fields is stationary.

A light-emitting plasma lamp bulb for solar ultraviolet simulation includes a bulb cover having a spherical shape or a rod shape through which ultraviolet rays are transmittable, discharge gas contained in the bulb cover, and a first light-emitting material and a second light-emitting material, wherein the first light-emitting material includes at least one of mercury (Hg) and mercury iodide (HgI.sub.2), and the second light-emitting material includes sulfur (S.sub.8), wherein light emitted from the bulb has a maximum optical power intensity in a range of 395 to 455 nm which is an ultraviolet-visible boundary region, wherein, when compared using a same ultraviolet dose in an ultraviolet region of 290 to 400 nm, an integrated intensity of a visible and infrared region of 400 to 850 nm is equal to or less than of an integrated intensity of a visible and infrared region of a standard solar spectrum (ASTM G173, AM 1.5G).