A target for ultraviolet light generation comprises a substrate adapted to transmit ultraviolet light therethrough and a light-emitting layer, disposed on the substrate, for generating ultraviolet light in response to an electron beam. The light-emitting layer includes a powdery or granular oxide crystal containing Lu and Si doped with an activator (e.g., Pr:LPS and Pr:LSO crystals).

A target for ultraviolet light generation comprises a substrate adapted to transmit ultraviolet light therethrough and a light-emitting layer, disposed on the substrate, for generating ultraviolet light in response to an electron beam. The light-emitting layer includes a powdery or granular oxide crystal containing Lu and Si doped with an activator (e.g., Pr:LPS and Pr:LSO crystals).

The present invention generally relates to a field emission light source and specifically to a miniaturized field emission light source that is possible to manufacture in large volumes at low cost using the concept of wafer level manufacturing, i.e. a similar approach as used by IC's and MEMS. The invention also relates to a lighting arrangement comprising at least one field emission light source. The field emission light source comprises: a field emission cathode (106) comprising a plurality of nanostructures (104) formed on a substrate; an electrically conductive anode structure (108) comprising a first wavelength converting material (118) arranged to cover at least a portion of the anode structure, wherein the first wavelength converting material is configured to receive electrons emitted from the field emission cathode and to emit light of a first wavelength range, and means for forming an hermetically sealed and subsequently evacuated cavity (106) between the substrate of the field emission cathode and the anode structure, including a spacer structure (302, 110) arranged to encircle the plurality of nano structures, wherein the substrate for receiving the plurality of nanostructures is a wafer (102′).

A lighting device 1 has phosphors, a porous material (5), and emitters 4. The emitters are interposed between the phosphors and surfaces (2a) to be irradiated with light of the lighting device. The porous material has heat conductivity and is impregnated with the phosphors.

There is provided a method for manufacturing a plurality of nanostructures comprising the steps of providing a plurality of spherical Zn structures and oxidizing the spherical structures in ambient atmosphere at a temperature in the range of 350° C. to 600° C. for a time period in the range of h to 172 h, such that ZnO nanowires protruding from the spherical structures are formed. There is also provided a field emission arrangement comprising a cathode having the aforementioned ZnO nanowire structures arranged thereon.

There is provided a method for manufacturing a plurality of nanostructures comprising the steps of providing a plurality of spherical Zn structures and oxidizing the spherical structures in ambient atmosphere at a temperature in the range of 350° C. to 600° C. for a time period in the range of h to 172 h, such that ZnO nanowires protruding from the spherical structures are formed. There is also provided a field emission arrangement comprising a cathode having the aforementioned ZnO nanowire structures arranged thereon.

Provided are an organic electroluminescence device capable of enhancing reflectance of an anode, thereby resulting in improved light-emitting efficiency and a method of manufacturing the same. An anode (12), a thin film layer for hole injection (13), an insulating layer (14), an organic layer (15) including a luminescent layer (15C) and a cathode (16) including a semi-transparent electrode (16A) are laminated in order on a substrate (11). The anode (12) comprises silver which is a metal with high reflectance or an alloy including silver, and the thin film layer for hole injection (13) comprises chromium oxide or the like. Light generated in the luminescent layer (15C) is multiply reflected between the anode (12) and the semi-transparent electrode (16A) to be emitted from the cathode (16). As the reflectance of the anode (12) is enhanced, the light generated in the luminescent layer (15C) can be efficiently emitted. An alloy comprised in the anode (12) preferably includes silver, palladium and copper, and a silver content is preferably 50% by mass or over.

An ultraviolet light generation target includes a light emitting layer. The light emitting layer contains a YPO.sub.4 crystal to which at least scandium (Sc) is added, and receives an electron beam to generate ultraviolet light. Further, a method of manufacturing the ultraviolet light generation target includes a first step of preparing a mixture containing yttrium (Y) oxide, Sc oxide, phosphoric acid, and a liquid, a second step of evaporating the liquid, and a third step of firing the mixture.

An ultraviolet light generation target includes a light emitting layer. The light emitting layer contains a YPO.sub.4 crystal to which at least scandium (Sc) is added, and receives an electron beam to generate ultraviolet light. Further, a method of manufacturing the ultraviolet light generation target includes a first step of preparing a mixture containing yttrium (Y) oxide, Sc oxide, phosphoric acid, and a liquid, a second step of evaporating the liquid, and a third step of firing the mixture.

A support member is made of a material(s) that excel in both of electrical conductivity and thermal conductivity. Phosphors are applied to the surface of the support member. The phosphors include layers having a very small thickness as close as possible to a minimum quantity of phosphors that can be obtained. The phosphors are disposed on a surface of the support member in a thickness small enough to an extent that the support member is slightly glimpsed in part from between the phosphors. The support member is exposed in part out of the lighting device.