An ultraviolet emitting device according to the present disclosure includes a lamp for mounting a discharge gas and an ultraviolet emission source therein, and a plurality of yarns formed by extending and aggregating carbon nanotubes in a first direction, and includes a first electrode at least partially exposed to the discharge gas within the lamp. Accordingly, electron emission efficiency of the first electrode is improved to achieve high efficiency, and durability is also improved to provide a long-life device.

A target for ultraviolet light generation comprises a substrate adapted to transmit ultraviolet light therethrough and a light-emitting layer, disposed on the substrate, for generating ultraviolet light in response to an electron beam. The light-emitting layer includes a powdery or granular oxide crystal containing Lu and Si doped with an activator (e.g., Pr:LPS and Pr:LSO crystals).

A target for ultraviolet light generation comprises a substrate adapted to transmit ultraviolet light therethrough and a light-emitting layer, disposed on the substrate, for generating ultraviolet light in response to an electron beam. The light-emitting layer includes a powdery or granular oxide crystal containing Lu and Si doped with an activator (e.g., Pr:LPS and Pr:LSO crystals).

The present invention generally relates to a field emission light source and specifically to a miniaturized field emission light source that is possible to manufacture in large volumes at low cost using the concept of wafer level manufacturing, i.e. a similar approach as used by IC's and MEMS. The invention also relates to a lighting arrangement comprising at least one field emission light source. The field emission light source comprises: a field emission cathode (106) comprising a plurality of nanostructures (104) formed on a substrate; an electrically conductive anode structure (108) comprising a first wavelength converting material (118) arranged to cover at least a portion of the anode structure, wherein the first wavelength converting material is configured to receive electrons emitted from the field emission cathode and to emit light of a first wavelength range, and means for forming an hermetically sealed and subsequently evacuated cavity (106) between the substrate of the field emission cathode and the anode structure, including a spacer structure (302, 110) arranged to encircle the plurality of nano structures, wherein the substrate for receiving the plurality of nanostructures is a wafer (102′).

The present invention generally relates to a field emission light source and specifically to a miniaturized field emission light source that is possible to manufacture in large volumes at low cost using the concept of wafer level manufacturing, i.e. a similar approach as used by IC's and MEMS. The invention also relates to a lighting arrangement comprising at least one field emission light source. The field emission light source comprises: a field emission cathode (106) comprising a plurality of nanostructures (104) formed on a substrate; an electrically conductive anode structure (108) comprising a first wavelength converting material (118) arranged to cover at least a portion of the anode structure, wherein the first wavelength converting material is configured to receive electrons emitted from the field emission cathode and to emit light of a first wavelength range, and means for forming an hermetically sealed and subsequently evacuated cavity (106) between the substrate of the field emission cathode and the anode structure, including a spacer structure (302, 110) arranged to encircle the plurality of nano structures, wherein the substrate for receiving the plurality of nanostructures is a wafer (102′).

A lighting device 1 has phosphors, a porous material (5), and emitters 4. The emitters are interposed between the phosphors and surfaces (2a) to be irradiated with light of the lighting device. The porous material has heat conductivity and is impregnated with the phosphors.

A lighting device 1 has phosphors, a porous material (5), and emitters 4. The emitters are interposed between the phosphors and surfaces (2a) to be irradiated with light of the lighting device. The porous material has heat conductivity and is impregnated with the phosphors.

A junctionless light emitting device comprises a field emitter cathode, and a light emitting semiconductor material sandwiched between an ohmic contact (OC) that faces the injected electrons and a Schottky contact (SC). The field emitter cathode is configured to inject electrons into the ohmic contact.

A junctionless light emitting device comprises a field emitter cathode, and a light emitting semiconductor material sandwiched between an ohmic contact (OC) that faces the injected electrons and a Schottky contact (SC). The field emitter cathode is configured to inject electrons into the ohmic contact.

An array of carbon nanotube micro-tip structure includes an insulating substrate and a plurality of patterned carbon nanotube film structures. The insulating substrate includes a surface. The surface includes an edge. A plurality of patterned carbon nanotube film structures spaced from each other. Each of the plurality of patterned carbon nanotube film structures is partially arranged on the surface of the insulating substrate. Each of the plurality of patterned carbon nanotube film structures comprises two strip-shaped arms joined together forming a tip portion protruding and suspending from the edge of the surface of the insulating substrate. Each of the two strip-shaped arms comprises a plurality of carbon nanotubes parallel to the surface of the insulating substrate.