A flash discharge tube includes tungsten pins configuring a pair of discharge electrodes, and an envelope. The envelope includes a central region, serving as an alkali-free region, which is configured with an alkali-free glass except for quartz glass. The central region becomes in a high temperature state during a firing operation of the flash discharge tube. The central region is smaller than a maximum region enclosing a gas-tight space formed by hermetically sealing the pair of the discharge electrodes and is not smaller than a minimum region enclosing an arc-discharge space formed between the tungsten pins of the pair of the discharge electrodes. The alkali-free region contains either no alkali metal component or not larger than a predetermined amount of an alkali metal component. Then, a trigger electrode is disposed in the alkali-free region. This provides the flash discharge tube featuring a stable short-interval continuous-firing operation.

A method of forming a plasma processing apparatus comprises providing a chamber, the chamber including a wall defining an interior, and a viewport extending through the wall. An analysis apparatus connected to the viewport may be formed. The analysis apparatus includes an analyzer adjacent to the chamber, a probe connected to the analyzer and aligned with the viewport, and a first window aligned with the probe, the first window having a first surface, and a second surface at an opposite side relative to the first surface, the second surface being exposed to the interior of the chamber, and the second surface of the first window has a scattering surface.

A method of forming a plasma processing apparatus comprises providing a chamber, the chamber including a wall defining an interior, and a viewport extending through the wall. An analysis apparatus connected to the viewport may be formed. The analysis apparatus includes an analyzer adjacent to the chamber, a probe connected to the analyzer and aligned with the viewport, and a first window aligned with the probe, the first window having a first surface, and a second surface at an opposite side relative to the first surface, the second surface being exposed to the interior of the chamber, and the second surface of the first window has a scattering surface.

A method of forming a radio frequency (RF) strap for use in a process chamber is provided. The method includes positioning a core strap including a first material that is electrically and thermally conductive in a first electrochemical bath. The first electrochemical bath includes a first solvent and a first plating precursor. The method further includes forming a first protective coating on an outer surface of the core strap, removing the first solvent and the first plating precursor from the core strap having the first protective coating formed thereon, post-treating the core strap having the first protective coating formed thereon, positioning the core strap having the first protective coating formed thereon in a second electrochemical bath, and forming a second protective coating on an outer surface of the first protective coating. The first protective coating includes nickel, the second electrochemical bath includes a second solvent and a second plating precursor, and the second protective coating includes gold.

Embodiments of the present disclosure generally relate to a method for forming and treating a component in semiconductor manufacturing. In one embodiment, a method for treating a chamber component used in vacuum processing includes obtaining the chamber component including a recess formed in a surface of the chamber component, the surface being fabricated from a metal, and the recess has a depth ranging from about 0.5 mm to about 10 mm and a width ranging from about 1 mm to about 15 mm. The method further includes polishing the bottom surface of the recess using a laser to form a polished bottom surface having an Ra number of 1 micron or less. The laser can achieve high quality surface finishing.

A method of forming a radio frequency (RF) strap for use in a process chamber is provided. The method includes positioning a core strap including a first material that is electrically and thermally conductive in a first electrochemical bath. The first electrochemical bath includes a first solvent and a first plating precursor. The method further includes forming a first protective coating on an outer surface of the core strap, removing the first solvent and the first plating precursor from the core strap having the first protective coating formed thereon, post-treating the core strap having the first protective coating formed thereon, positioning the core strap having the first protective coating formed thereon in a second electrochemical bath, and forming a second protective coating on an outer surface of the first protective coating. The first protective coating includes nickel, the second electrochemical bath includes a second solvent and a second plating precursor, and the second protective coating includes gold.

The present invention relates to a plasma-resistant glass, chamber interior parts for a semiconductor manufacturing process, and methods for manufacturing same, and specifically, to a plasma-resistant glass and a method for manufacturing same, wherein the content of components of the plasma-resistant glass can be controlled to reduce the thermal expansion coefficient of the glass and thereby prevent the glass from being damaged due to thermal shock when used at a high-temperature.

A flash discharge tube includes tungsten pins configuring a pair of discharge electrodes, and an envelope. The envelope includes a central region, serving as an alkali-free region, which is configured with an alkali-free glass except for quartz glass. The central region becomes in a high temperature state during a firing operation of the flash discharge tube. The central region is smaller than a maximum region enclosing a gas-tight space formed by hermetically sealing the pair of the discharge electrodes and is not smaller than a minimum region enclosing an arc-discharge space formed between the tungsten pins of the pair of the discharge electrodes. The alkali-free region contains either no alkali metal component or not larger than a predetermined amount of an alkali metal component. Then, a trigger electrode is disposed in the alkali-free region. This provides the flash discharge tube featuring a stable short-interval continuous-firing operation.

A method of providing a stable connector used in a deposition apparatus is presented. The method may comprise forming a dome-shaped electrode connector inside of a ceramic material, drilling out a part of the ceramic material along with a portion of the dome-shaped electrode connector to flatten the electrode connector; and bonding a rod into a remaining part of the electrode connector. The method would provide a stable electrode connector which could hold the entire length of the rod which is bonded onto it. The length of the flattened electrode connector could be 5 mm.

A method of providing a stable connector used in a deposition apparatus is presented. The method may include forming a dome-shaped electrode connector inside of a ceramic material, drilling out a part of the ceramic material along with a portion of the dome-shaped electrode connector to flatten the electrode connector, and bonding a rod into a remaining part of the electrode connector. The method would provide a stable electrode connector which could hold the entire length of the rod which is bonded onto it. The length of the flattened electrode connector could be 5 mm.