A display manufacturing device sticks a transparent panel to a display panel, the display panel including a front surface having a periphery covered by a bezel. The display manufacturing device includes: a dispenser that makes a dam by dispensing a light curable resin to straddle the front surface of the display panel and the bezel, and be along an inner peripheral edge of the bezel to stick the transparent panel to the front surface of the display panel; and at least one light irradiation device that emits light that cures the dam. The at least one light irradiation device emits the light in a direction that forms an acute angle between the direction and the front surface of the display panel, the direction being a direction that allows the light to reach the light curable resin that has entered a gap between the front surface and the bezel.

A display manufacturing device sticks a transparent panel to a display panel, the display panel including a front surface having a periphery covered by a bezel. The display manufacturing device includes: a dispenser that makes a dam by dispensing a light curable resin to straddle the front surface of the display panel and the bezel, and be along an inner peripheral edge of the bezel to stick the transparent panel to the front surface of the display panel; and at least one light irradiation device that emits light that cures the dam. The at least one light irradiation device emits the light in a direction that forms an acute angle between the direction and the front surface of the display panel, the direction being a direction that allows the light to reach the light curable resin that has entered a gap between the front surface and the bezel.

A feedthrough for providing an electrical connection is provided. The feedthrough comprises a conductor and a quartz or a glass structure configured to surround at least a portion of the conductor and provide isolation to the conductor. The conductor and the quartz or glass structure may be coaxially arranged. The feedthrough can provide an electrical connection between an inside and outside of a vacuum chamber that contains a sample.

A feedthrough for providing an electrical connection is provided. The feedthrough comprises a conductor and a quartz or a glass structure configured to surround at least a portion of the conductor and provide isolation to the conductor. The conductor and the quartz or glass structure may be coaxially arranged. The feedthrough can provide an electrical connection between an inside and outside of a vacuum chamber that contains a sample.

A feedthrough for providing an electrical connection is provided. The feedthrough comprises a conductor and a quartz or a glass structure configured to surround at least a portion of the conductor and provide isolation to the conductor. The conductor and the quartz or glass structure may be coaxially arranged. The feedthrough can provide an electrical connection between an inside and outside of a vacuum chamber that contains a sample.

A feedthrough for providing an electrical connection is provided. The feedthrough comprises a conductor and a quartz or a glass structure configured to surround at least a portion of the conductor and provide isolation to the conductor. The conductor and the quartz or glass structure may be coaxially arranged. The feedthrough can provide an electrical connection between an inside and outside of a vacuum chamber that contains a sample.

An electrode arrangement for a discharge lamp is provided, including an electrode unit including an electrode and an electrode plate, and a conductive connection unit for coupling to an energy source. The connection unit includes a connection unit plate. The arrangement includes a cylinder composed of a nonconductive material, said cylinder arranged between the electrode plate and the connection unit plate, and at least one conduction film which is arranged on an outer side of the cylinder and extends from the connection unit plate as far as the electrode plate and connects the connection unit plate and the electrode plate to one another. The arrangement includes a cap-shaped and integrally embodied protective film arranged on the electrode plate or connection unit plate, such that the film covers a plate side facing away from the cylinder and an outer lateral surface of the electrode plate or of the connection unit plate.

An electrode arrangement for a discharge lamp is provided, including an electrode unit including an electrode and an electrode plate, and a conductive connection unit for coupling to an energy source. The connection unit includes a connection unit plate. The arrangement includes a cylinder composed of a nonconductive material, said cylinder arranged between the electrode plate and the connection unit plate, and at least one conduction film which is arranged on an outer side of the cylinder and extends from the connection unit plate as far as the electrode plate and connects the connection unit plate and the electrode plate to one another. The arrangement includes a cap-shaped and integrally embodied protective film arranged on the electrode plate or connection unit plate, such that the film covers a plate side facing away from the cylinder and an outer lateral surface of the electrode plate or of the connection unit plate.

A vertical vacuum transistor with a sharp tip structure, and associated fabrication process, is provided that is compatible with current vertical CMOS fabrication processing. The resulting vertical vacuum channel transistor advantageously provides improved operational characteristics including a higher operating frequency, a higher power output, and a higher operating temperature while at the same time providing a higher density of vertical transistor devices during the manufacturing process.

A vertical vacuum transistor with a sharp tip structure, and associated fabrication process, is provided that is compatible with current vertical CMOS fabrication processing. The resulting vertical vacuum channel transistor advantageously provides improved operational characteristics including a higher operating frequency, a higher power output, and a higher operating temperature while at the same time providing a higher density of vertical transistor devices during the manufacturing process.