Patent classifications
H01J9/30
BASE CAN FASTENING SYSTEM
A fastening system for coupling an object having object openings to a base can with a flange having base can apertures. The fastening system includes a clip with an upper arm and a lower arm each extending from a spreader that separates the upper and lower arms. The clip is configured to engage the flange such that the flange is positioned between the upper and lower arms. The clip is configured to retain a nut having a nut opening with internal threads between the lower arm and the flange such that the nut opening is aligned to one of the base can apertures. A coupling system with a threaded member is configured to couple the object to the base can by extending at least through one object opening and one base can aperture, and also extending at least partially into the nut opening to engage the nut.
Ceramic structure for plasma processing apparatus and manufacturing method thereof
A ceramic structure including a first conductive structure embedded therein and a second conductive structure embedded at a different depth from the first conductive structure is disclosed. In the ceramic structure, the first conductive structure and the second conductive structure are electrically connected to each other by an electrically conductive connection member capable of compensating for a vertical shrinkage rate of a ceramic sheet shape while being embedded therein when sintering the ceramic structure.
Ceramic structure for plasma processing apparatus and manufacturing method thereof
A ceramic structure including a first conductive structure embedded therein and a second conductive structure embedded at a different depth from the first conductive structure is disclosed. In the ceramic structure, the first conductive structure and the second conductive structure are electrically connected to each other by an electrically conductive connection member capable of compensating for a vertical shrinkage rate of a ceramic sheet shape while being embedded therein when sintering the ceramic structure.
CERAMIC STRUCTURE FOR PLASMA PROCESSING APPARATUS AND MANUFACTURING METHOD THEREOF
A ceramic structure including a first conductive structure embedded therein and a second conductive structure embedded at a different depth from the first conductive structure is disclosed. In the ceramic structure, the first conductive structure and the second conductive structure are electrically connected to each other by an electrically conductive connection member capable of compensating for a vertical shrinkage rate of a ceramic sheet shape while being embedded therein when sintering the ceramic structure
CERAMIC STRUCTURE FOR PLASMA PROCESSING APPARATUS AND MANUFACTURING METHOD THEREOF
A ceramic structure including a first conductive structure embedded therein and a second conductive structure embedded at a different depth from the first conductive structure is disclosed. In the ceramic structure, the first conductive structure and the second conductive structure are electrically connected to each other by an electrically conductive connection member capable of compensating for a vertical shrinkage rate of a ceramic sheet shape while being embedded therein when sintering the ceramic structure
SAMPLE SUPPORT
A sample support includes a substrate including a first surface, and a second surface on a side opposite to the first surface, and including a measurement region in which a porous structure for communicating the first surface and the second surface with each other is formed. A calibration portion including a surface flush with the first surface is formed in the substrate. The water absorbability of the calibration portion is lower than the water absorbability of the measurement region.
SAMPLE SUPPORT
A sample support includes a substrate including a first surface, and a second surface on a side opposite to the first surface, and including a measurement region in which a porous structure for communicating the first surface and the second surface with each other is formed. A calibration portion including a surface flush with the first surface is formed in the substrate. The water absorbability of the calibration portion is lower than the water absorbability of the measurement region.
SUSCEPTOR MANUFACTURING METHOD AND THE MANUFACTURED SUSCEPTOR USING THE SAME
A method of providing a stable connector used in a deposition apparatus is presented. The method may comprise forming a dome-shaped electrode connector inside of a ceramic material, drilling out a part of the ceramic material along with a portion of the dome-shaped electrode connector to flatten the electrode connector; and bonding a rod into a remaining part of the electrode connector. The method would provide a stable electrode connector which could hold the entire length of the rod which is bonded onto it. The length of the flattened electrode connector could be 5 mm.
SUSCEPTOR MANUFACTURING METHOD AND THE MANUFACTURED SUSCEPTOR USING THE SAME
A method of providing a stable connector used in a deposition apparatus is presented. The method may comprise forming a dome-shaped electrode connector inside of a ceramic material, drilling out a part of the ceramic material along with a portion of the dome-shaped electrode connector to flatten the electrode connector; and bonding a rod into a remaining part of the electrode connector. The method would provide a stable electrode connector which could hold the entire length of the rod which is bonded onto it. The length of the flattened electrode connector could be 5 mm.
Susceptor manufacturing method and the manufactured susceptor using the same
A method of providing a stable connector used in a deposition apparatus is presented. The method may include forming a dome-shaped electrode connector inside of a ceramic material, drilling out a part of the ceramic material along with a portion of the dome-shaped electrode connector to flatten the electrode connector, and bonding a rod into a remaining part of the electrode connector. The method would provide a stable electrode connector which could hold the entire length of the rod which is bonded onto it. The length of the flattened electrode connector could be 5 mm.