A method of designing an integrated circuit (IC) chip is discloses. The method includes designing a higher level comprising a plurality of outputs configured to be connected to inputs in a previously-designed macro level, wherein each input in the macro level includes a configurable filler cell. The method also includes calculating if each input includes an antenna violation based on the higher level and the macro level, and configuring each of the filler cells, wherein each filler cell associated with an antenna violation is configured as an antenna diode.

The disclosure relates to an integrated circuit comprising: a first voltage terminal; a second voltage terminal; and a plurality of logic cells, comprising one or more field effect transistors having a p-type channel and one or more field effect transistors having an n-type channel. The plurality of logic cells comprises a regular subset of cells and a spare subset of cells. Electrical connectors are arranged to: connect the gates of the regular subset of cells in order to provide a functional logic arrangement; connect the gates of the one or more field effect transistors having a p-type channel of the spare subset of cells to the first voltage terminal; and connect the gates of the one or more field effect transistors having an n-type channel of the spare subset of cells to the second voltage terminal.

Provided is a semiconductor integrated circuit device including a nanowire field effect transistor (FET) and having a layout configuration effective for making manufacturing the device easy. In a standard cell including nanowire FETs connected in series through an intermediate node used only for mutual connection, the nanowire FETs include first, second, and third pads, Na nanowires extending in an X direction between the first and second pads to connect the first and second pads together, and Nb nanowires extending in the X direction between the second and third pads to connect the second and third pads together.

The disclosure relates to an integrated circuit comprising: a first voltage terminal; a second voltage terminal; and a plurality of logic cells, comprising one or more field effect transistors having a p-type channel and one or more field effect transistors having an n-type channel. The plurality of logic cells comprises a regular subset of cells and a spare subset of cells. Electrical connectors are arranged to: connect the gates of the regular subset of cells in order to provide a functional logic arrangement; connect the gates of the one or more field effect transistors having a p-type channel of the spare subset of cells to the first voltage terminal; and connect the gates of the one or more field effect transistors having an n-type channel of the spare subset of cells to the second voltage terminal.

Aspects of the disclosure include an integrated circuit that includes a plurality of functional circuit cells and a plurality of inactive spare functional circuit cells. Ones of the functional circuit cells respectively includes a set of first electrically interconnected transistors that define a first logic component and a first power rail configured to carry a first supply voltage. Ones of the inactive spare functional circuit cells respectively includes a set of second electrically interconnected transistors configured to define a second logic component. The set of electrically interconnected transistors is interconnected through a second set of conductive lines formed in the first conductive layer. The set of second electrically interconnected transistors is not connected to any power rail.