A substrate processing method capable of suppressing corrosion of a conductive material on a surface of a substrate by supplying a liquid having a reduced concentration of dissolved oxygen onto the substrate. The substrate processing method includes: dissolving an inert gas in a liquid at not less than a saturation solubility to replace oxygen dissolved in the liquid with the inert gas; generating bubbles of the inert gas in the liquid by depressurizing the liquid in which the inert gas is dissolved; and processing the substrate while supplying the liquid containing the bubbles to the surface of the substrate.

The present invention provides a cleaning liquid for a semiconductor substrate that has been subjected to CMP, in which the cleaning liquid has an excellent selectivity for RuO.sub.2 removing performance; and a method for cleaning a semiconductor substrate that has been subjected to CMP. The cleaning liquid of an embodiment of the present invention is a cleaning liquid for a semiconductor substrate that has been subjected to a chemical mechanical polishing treatment, in which the cleaning liquid includes a perhalogen acid and a halogen acid.

Methods of forming a slurry and methods of performing a chemical mechanical polishing (CMP) process utilized in manufacturing semiconductor devices, as described herein, may be performed on semiconductor devices including integrated contact structures with ruthenium (Ru) plug contacts down to a semiconductor substrate. The slurry may be formed by mixing a first abrasive, a second abrasive, and a reactant with a solvent. The first abrasive may include a first particulate including titanium dioxide (TiO.sub.2) particles and the second abrasive may include a second particulate that is different from the first particulate. The slurry may be used in a CMP process for removing ruthenium (Ru) materials and dielectric materials from a surface of a workpiece resulting in better WiD loading and planarization of the surface for a flat profile.

A method of cleaning a conducting film containing tin oxide from an insulating surface of an item for use in electroplating applications, comprises the steps of immersing the item in a cleaning fluid and irradiating the immersed item with light of wavelength in the range 100 nm-450 nm.

The present invention relates to a cleaning liquid containing a component (A): a compound represented by the following formula (1), component (B): alkylamine, component (C): polycarboxylic acid, and component (D): ascorbic acid, in which a mass ratio of the component (A) to a total mass of the component (B) and the component (C) is 1 to 15, and in the formula (1), R.sup.1, R.sup.2, and R.sup.3 each have a definition same as the definition described in the description, ##STR00001##

An object of the present invention is to provide a cleaning liquid for a semiconductor substrate, which has excellent corrosion prevention performance for a metal-containing layer. In addition, another object of the present invention is to provide a method for cleaning a semiconductor substrate.

The cleaning liquid of an embodiment of the present invention is a cleaning liquid for a semiconductor substrate that has been subjected to a chemical mechanical polishing treatment, in which the cleaning liquid includes a component A having two or more onium structures in a molecule, and water, and has a pH of 7.0 to 11.8 at 25° C.

The present invention provides: a cleaning liquid for semiconductor substrates having undergone CMP, the cleaning liquid being excellent in temporal stability and cleaning performance; and a method of cleaning such semiconductor substrates. A cleaning liquid of the invention contains: a first amine compound which is represented by Formula (1) and whose conjugated acid has a first acidity constant of not less than 8.5; and a second amine compound (provided that the first amine compound is excluded). The mass ratio of the first amine compound content to the second amine compound content is 1 to 100, and the cleaning liquid has pH of 6.0-12.0 at 25° C.

##STR00001##

Provided is a means capable of sufficiently removing residues remaining on a surface of a polished object. Provided is a composition for surface treatment for use in reducing a residue on a surface of a polished object, containing a solvent and a water-soluble polymer, wherein an adsorption amount of the water-soluble polymer adsorbed to a quartz crystal microbalance electrode is 100 ng/cm.sup.2 or more and 600 ng/cm.sup.2 or less per unit area of the quartz crystal microbalance electrode.

Provided are compositions and methods useful in the post-CMP cleaning of microelectronic devices, in particular, devices which contain one or more surfaces comprising hydrophobic carbon or SiC. In general, the compositions comprise a chelating agent; a water-miscible solvent; a reducing agent; and a pH adjustor, wherein the composition has a pH of about 2 to about 13.

The present disclosure relates to cleaning compositions that can be used to clean semiconductor substrates. These cleaning compositions can be used to remove defects arising from previous processing steps on these semiconductor substrates. These cleaning compositions can remove the defects/contaminants from the semiconductor substrates and thereby make the substrates appropriate for further processing. The cleaning compositions described herein primarily contain at least one organic acid and at least one anionic polymer.