A substrate processing apparatus includes a substrate processing part that supplies a processing liquid from a processing liquid supply part to a mounted substrate to execute liquid processing, a liquid drainage part that has a recovery channel connected to a storage part that stores the processing liquid and drains the processing liquid used for the liquid processing, and a control unit executes a processing recipe for the liquid processing and a cleaning recipe for cleaning the substrate processing part and the liquid drainage part. The control unit executes a cleaning operation for supplying a cleaning liquid from a cleaning liquid supply part to clean the substrate processing part and the liquid drainage part and subsequently executes a return operation for supplying the processing liquid from the processing liquid supply part to replace the cleaning liquid attached to the substrate processing part and the liquid drainage part with the processing liquid.

A substrate processing method includes forming a high surface tension liquid film by supplying high surface tension liquid on a substrate surface, replacing the high surface tension liquid film with low surface tension liquid by supplying the low surface tension liquid to a center area of a substrate so that the low surface tension liquid impinges on the high surface tension liquid film formed on the center area of the substrate, and supplying high surface tension liquid for a predetermined period of time during the supplying the low surface tension liquid.

A carrier boat for die package flux cleaning, including: a body having at least one pair of substantially parallel sides, the body comprising one or more die package receptacles each oriented at a non-parallel angle relative to the substantially parallel sides of the body such that, when a die package is seated in a die package receptacle of the one or more die package receptacles, a first pair of opposing sides of a die of the die package are substantially perpendicular to the substantially parallel sides,

Embodiments of the present disclosure generally include apparatus and methods for removing adhesive residues from a surface of a lithography mask. In particular, the processing systems described herein provide for the delivery of a solvent to a discrete plurality of locations on the surface of the lithography mask to facilitate the removal of adhesive residue therefrom. In one embodiment, a method of processing a substrate includes positioning the substrate on a substrate support of a processing system, sealing individual ones of a plurality of cleaning units to a surface of the substrate at a corresponding plurality of locations, heating a cleaning fluid to a temperature between about 50° C. and about 150° C., flowing the cleaning fluid to, and thereafter, from, the plurality of cleaning units, and exposing the surface of the substrate to the cleaning fluid at the plurality of locations.

According to one embodiment, a method including supplying a liquid onto a substrate, solidifying the liquid on the substrate to form a solidified body, and melting the solidified body of the liquid on the substrate is provided. When solidifying the liquid, an internal pressure of the liquid on the substrate is varied.

According to various embodiments, a method for processing a semiconductor region, wherein the semiconductor region comprises at least one precipitate, may include: forming a precipitate removal layer over the semiconductor region, wherein the precipitate removal layer may define an absorption temperature at which a chemical solubility of a constituent of the at least one precipitate is greater in the precipitate removal layer than in the semiconductor region; and heating the at least one precipitate above the absorption temperature.

A spin base is caused to rotate at a number of revolutions of from 250 rpm to 350 rpm (first number of revolutions), and at the same time, a cleaning solution is supplied through a discharge head to a holding surface of a spin base while the upper end of a processing cup surrounding the spin base is placed below the holding surface. Thus, an outer upper surface of the processing cup is cleaned with the cleaning solution scattered from the holding surface. Then, the spin base is caused to rotate at a number of revolutions of from 350 rpm to 450 rpm (second number of revolutions) higher than the first number of revolutions, and at the same time, a cleaning solution is supplied through the discharge head onto the holding surface. Thus, a partition plate outside the processing cup is cleaned with the cleaning solution scattered from the rotating holding surface.

The present invention provides an UV cleaning device of a glass substrate, comprising a lamp box, an UV lamp positioned above inside the lamp box, a transparent shield positioned under the UV lamp, a humidifier positioned under the transparent shield and a power exhaust device under the transparent shield and opposite to the humidifier; in usage, the glass substrate is conveyed to be inside the lamp box, and UV light generated by the UV lamp irradiates on the glass substrate through the shield to clean the glass substrate and a humidity and an oxygen content inside the lamp box are adjusted with the humidifier to make a surface of the glass substrate adsorb one layer of water molecules. The electrons generated as the UV light cleans can be gradually conducted and led out with water molecules to effectively restrain the accumulation of the electrostatic to reduce the phenomenon of electrostatic damage, and meanwhile, the increase of the oxygen content makes the concentration of the activated oxygen atoms increases along with. Accordingly, the result of cleaning the organic objects with the UV light is promoted.

Disclosed is a liquid chemical for forming a water-repellent protecting film at least on a surface of a recessed portion of an uneven pattern at the time of cleaning a wafer having a finely uneven pattern at its surface and containing silicon at at least a part of the uneven pattern. This liquid chemical contains a silicon compound A represented by the general formula: R.sup.1.sub.aSi(H).sub.bX.sub.4-a-b and an acid A, the acid A being at least one selected from the group consisting of trimethylsilyl trifluoroactate, trimethylsilyl trifluoromethanesulfonate, dimethylsilyl trifluoroactate, dimethylsilyl trifluoromethanesulfonate, butyldimethylsilyl trifluoroactate, butyldimethylsilyl trifluoromethanesulfonate, hexyldimethylsilyl trifluoroacetate, hexyldimethylsilyl trifluoromethanesulfonate, octyldimethylsilyl trifluoroactate, octyldimethylsilyl trifluoromethanesulfonate, decyldimethylsilyl trifluoroacetate and decyldimethylsilyl trifluoromethanesulfonate.

A system and method for cleaning mesa sidewalls of a template. Curable material may be deposited in a cleaning drop pattern onto a non-yielding imprint field of one of: a device yielding substrate; and a non-yielding substrate. The template may be brought into contact with the curable material. The template has: a recessed surface; a mesa extending from the recessed surface; and wherein the mesa sidewalls connect the recessed surface to the mesa. A relative position of the template to the cleaning drop pattern may be such that the curable material spreads up the mesa sidewalls and does not contact the recessed surface. Cured material may be formed by exposing the curable material to actinic radiation after the curable material has spread up the mesa sidewalls, and before the curable material contacts the recessed surface. The template may be separated from the cured material.