A substrate processing apparatus includes: a processing container including a processing space capable of accommodating a substrate in a state where a surface of the substrate is wet by a liquid; a processing fluid supply that supplies a processing fluid in a supercritical state to the processing space toward the liquid; a first exhaust line connected to a first exhaust source; a second exhaust line connected to a second exhaust source and connected to the first exhaust line between the first exhaust source and the processing space; and a controller controlling the second exhaust pressure. The processing fluid in the supercritical state contacts the liquid to dry the substrate, and the controller makes the second exhaust pressure to be higher than the first exhaust pressure during a period in which the processing fluid supply stops supplying the processing fluid to the processing space.

A substrate processing apparatus performs increasing a pressure within a processing vessel up to a processing pressure higher than a threshold pressure of a processing fluid by supplying the processing fluid into the processing vessel in which a substrate having thereon a liquid is accommodated; and supplying the processing fluid into the processing vessel and draining the processing fluid while maintaining the pressure within the processing vessel at a level allowing the processing fluid to be maintained in a supercritical state. The increasing of the pressure includes: increasing the pressure to a first pressure; and increasing the pressure to the processing pressure from the first pressure. A temperature of the substrate is controlled to a first temperature in the increasing of the pressure to the first pressure, and is controlled to a second temperature higher than the first temperature in the increasing of the pressure to the processing pressure.

Disclosed is a method for processing a substrate, comprising a liquid processing step of performing liquid processing on the substrate by supplying a processing liquid onto the substrate in a liquid processing chamber, a transfer step of transferring the substrate from the liquid processing chamber to a drying chamber, and a drying step of drying the substrate in the drying chamber. In the drying step, the substrate is dried while an edge region of the substrate other than a central region of the substrate is supported by a support unit, and in the liquid processing step, the liquid processing is performed on the substrate such that a height of the processing liquid remaining on the edge region of the substrate is greater than a height of the processing liquid remaining on the central region of the substrate when the liquid processing is completed in the liquid processing chamber.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber providing an inner space; a fluid supply unit configured to supply a treating fluid to the inner space; and a fluid exhaust unit configured to exhaust the treating fluid from the inner space, and wherein the fluid exhaust unit includes: an exhaust line connected to the chamber; and a pressure adjusting member installed at the exhaust line and configured to maintain a pressure of the inner space to a set pressure, and wherein the fluid supply unit includes: a fluid supply source; and a supply line provided between the fluid supply source and the chamber, and wherein at the supply line or the exhaust line a flow rate measuring member configured to measure a flow rate per unit time of the treating fluid flowing at the inner space is installed.

A wafer drying apparatus is disclosed. The wafer drying apparatus may include a drying chamber housing providing a drying space, in which a wafer is disposed, a supercritical fluid supplying part configured to supply a supercritical fluid into the drying space, a wafer heating part configured to heat the wafer disposed in the drying space, and a wafer cooling part configured to cool the wafer disposed in the drying space. The wafer cooling part may include a cooling plate disposed below a place, on which the wafer is loaded, and a cooling conduit inserted in the cooling plate.

A composition for cleaning a substrate is provided. According to an embodiment, the composition for cleaning the substrate includes an organic solvent having a Hansen solubility parameter of 5 or more to 12 or less for polystyrene latex to the substrate.

Provided are a wafer cleaning apparatus based on light irradiation capable of effectively cleaning residue on a wafer without damaging the wafer, and a wafer cleaning system including the cleaning apparatus. The wafer cleaning apparatus is configured to clean residue on the wafer by light irradiation and includes: a light irradiation unit configured to irradiate light onto the wafer during the light irradiation; a wafer processing unit configured accommodate the wafer and to control a position of the wafer such that the light is irradiated onto the wafer during the light irradiation; and a cooling unit configured to cool the wafer after the light irradiation has been completed. The light irradiation unit, the wafer processing unit, and the cooling unit are sequentially arranged in a vertical structure with the light irradiation unit above the wafer processing unit and the wafer processing unit above the cooling unit.

The inventive concept provides a liquid treating apparatus. The liquid treating apparatus includes a spin chuck configured to support and rotate a substrate; and a liquid supply unit configured to supply a liquid to the substrate, and wherein the liquid supply unit includes: a first nozzle connected to a first flow path pipe and configured to discharge a first liquid to the substrate; a first valve assembly including a first cut-off valve for cutting-off a flow of the first liquid within the first flow path pipe and a first suck-back valve for sucking-back the first liquid, and installed at the first flow pipe; a second nozzle connected to a second flow path pipe and configured to discharge a second liquid to the substrate; a second valve assembly including a second cut-off valve for cutting-off a flow of the second liquid within the second flow path pipe and a second suck-back valve for sucking-back the second liquid, and installed at the second flow pipe path; a first flow velocity controller configured to adjust an air flow velocity of an air introduced into or outflowed from the first suck-back valve; and a second flow velocity controller configured to adjust an air flow velocity of an air introduced into or outflowed from the second suck-back valve, and wherein a first speed of a suck-back speed provided by the first valve assembly is slower than a second suck-back speed provided by the second valve assembly, and a surface tension of the first liquid is lower than a surface tension of the second liquid.

There is provided a method of cleaning a substrate processing apparatus in which a drying process of drying a substrate whose surface is wet with a liquid is performed by bring the substrate into contact with a supercritical fluid, the method including: diffusing a first cleaning fluid in an interior of the substrate processing apparatus, the first cleaning fluid being obtained by mixing the supercritical fluid with a solvent containing polar molecules and having a lower boiling point than a boiling point of the liquid; and discharging the first cleaning fluid from the interior of the substrate processing apparatus, that occurs after the diffusing the first cleaning fluid.

In one example, a method for wafer drying includes providing a surface of a first wafer, the surface of the first wafer including a liquid to be removed with a drying process. The method further includes replacing the liquid with a first solid film in a first processing chamber, the first solid film covering the surface of the first wafer. The method further includes transferring the first wafer from the first processing chamber to a second processing chamber. The method further includes processing the first wafer in the second processing chamber by flowing a supercritical fluid through the second processing chamber, where the supercritical fluid removes the first solid film.