There is provided resist underlayer film for lithography process with high dry etching resistance, wiggling resistance, and heat resistance. Resist underlayer film-forming composition for lithography including polymer having unit structure of Formula (1): wherein A is hydroxy group-substituted C.sub.6-40 arylene group derived from polyhydroxy aromatic compound; B is C.sub.6-40 arylene group or C.sub.4-30 heterocyclic group containing nitrogen atom, oxygen atom, sulfur atom, or combination thereof; X.sup.+ is H.sup.+, NH.sub.4.sup.+, primary ammonium ion, secondary ammonium ion, tertiary ammonium ion, or quaternary ammonium ion, T is hydrogen atom, C.sub.1-10 alkyl group or C.sub.6-40 aryl group that may be substituted with halogen group, hydroxy group, nitro group, amino group, carboxylate ester group, nitrile group, or combination thereof as substituent, or C.sub.4-30 heterocyclic group containing nitrogen atom, oxygen atom, sulfur atom, or combination thereof, B and T may form C.sub.4-40 ring together with carbon atom to which they are bonded. ##STR00001##

A multi-charged particle beam writing apparatus according to one aspect of the present invention includes a region setting unit configured to set, as an irradiation region for a beam array to be used, the region of the central portion of an irradiation region for all of multiple beams of charged particle beams implemented to be emittable by a multiple beam irradiation mechanism, and a writing mechanism, including the multiple beam irradiation mechanism, configured to write a pattern on a target object with the beam array in the region of the central portion having been set in the multiple beams implemented.

A multi-charged particle beam writing apparatus according to one aspect of the present invention includes a region setting unit configured to set, as an irradiation region for a beam array to be used, the region of the central portion of an irradiation region for all of multiple beams of charged particle beams implemented to be emittable by a multiple beam irradiation mechanism, and a writing mechanism, including the multiple beam irradiation mechanism, configured to write a pattern on a target object with the beam array in the region of the central portion having been set in the multiple beams implemented.

A resist underlayer film having an especially high dry etching rate; a composition for forming the resist underlayer film; a method for forming a resist pattern; and a method for producing a semiconductor device. The composition for forming the resist underlayer film has a solvent and a product of reaction between an epoxidized compound and a heterocyclic compound containing at least one moiety having reactivity with an epoxy group. It is preferable that the heteroring contained in the heterocyclic compound be selected from among furan, pyrrole, pyran, imidazole, pyrazole, oxazole, thiophene, thiazole, thiadiazole, imidazolidine, thiazolidine, imidazoline, dioxane, morpholine, diazine, thiazine, triazole, tetrazole, dioxolane, pyridazine, pyrimidine, pyrazine, piperidine, piperazine, indole, purine, quinoline, isoquinoline, quinuclidine, chromene, thianthrene, phenothiazine, phenoxazine, xanthene, acridine, phenazine, and carbazole.

Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. Particular embodiments are directed to implementation of an underlying absorbing and/or conducting layer for ebeam direct write (EBDW) lithography.

A template includes: a base material having a surface including a first pattern, a second pattern and a third pattern, the first pattern including a first recess, the second pattern including a second recess. The base material containing a first material having a first refractive index; a first layer disposed in the first recess and containing a second material, the second material having a second refractive index different from the first refractive index; and a second layer disposed in the second recess, containing the second material, and being thicker than the first layer.

A plasma etch resist material modified by an inorganic protective component via sequential infiltration synthesis (SIS) and methods of preparing the modified resist material. The modified resist material is characterized by an improved resistance to a plasma etching or related process relative to the unmodified resist material, thereby allowing formation of patterned features into a substrate material, which may be high-aspect ratio features. The SIS process forms the protective component within the bulk resist material through a plurality of alternating exposures to gas phase precursors which infiltrate the resist material. The plasma etch resist material may be initially patterned using photolithography, electron-beam lithography or a block copolymer self-assembly process.

Techniques related to multi-pass patterning lithography, device structures, and devices formed using such techniques are discussed. Such techniques include exposing a resist layer disposed over a grating pattern with non-reflecting radiation to generate an enhanced exposure portion within a trench of the grating pattern and developing the resist layer to form a pattern layer having a pattern structure within the trench of the grating pattern.

Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a column for an e-beam direct write lithography tool includes a first blanker aperture array (BAA) including a staggered array of openings having a pitch along an array direction. The array direction is orthogonal to a scan direction. Each opening has a first dimension in the array direction. The column also includes a second BAA including a staggered array of openings having the pitch along the array direction. Each opening has a second dimension in the array direction, the second dimension greater than the first dimension.

Disclosed is a method for lithography patterning. The method includes providing a substrate, forming a deposition enhancement layer (DEL) over the substrate, and flowing an organic gas near a surface of the DEL. During the flowing of the organic gas, the method further includes irradiating the DEL and the organic gas with a patterned radiation. Elements of the organic gas polymerize upon the patterned radiation, thereby forming a resist pattern over the DEL. The method further includes etching the DEL with the resist pattern as an etch mask, thereby forming a patterned DEL.