In this work is presented a method for fabrication of high-aspect ratio structures through spalling effect. The spalling is achieved through lithography, etching and sputtering processes, thus providing the flexibility to position the spalled structures according to the application requirements. This method has been successfully demonstrated for metal-oxides and metals. The width of the fabricated structures is dependent on the thickness of the film deposited by sputtering, where structures as small as 20 nm in width have been obtained.

A plasma etch resist material modified by an inorganic protective component via sequential infiltration synthesis (SIS) and methods of preparing the modified resist material. The modified resist material is characterized by an improved resistance to a plasma etching or related process relative to the unmodified resist material, thereby allowing formation of patterned features into a substrate material, which may be high-aspect ratio features. The SIS process forms the protective component within the bulk resist material through a plurality of alternating exposures to gas phase precursors which infiltrate the resist material. The plasma etch resist material may be initially patterned using photolithography, electron-beam lithography or a block copolymer self-assembly process.

A method for forming a device includes forming a hole pattern in a resist layer disposed over a substrate. The substrate includes contact regions disposed over a major surface of the substrate and a dielectric layer disposed over the contact regions. The resist layer is disposed over the dielectric layer and the hole pattern includes through openings in the resist layer that are aligned with the contact regions. The through openings include a first through opening having a first critical dimension and a second through opening having a second critical dimension greater than the first critical dimension. The method includes modifying the hole pattern by depositing a material including silicon within the through openings by exposing the hole pattern to a first plasma generated from a gas mixture including SiCl.sub.4 and hydrogen, and then etching holes in the dielectric layer through the modified hole pattern, exposing the contact regions.

The present invention is a material for forming an organic film, including: a compound shown by the following general formula (1); and an organic solvent, where in the general formula (1), X represents an organic group with a valency of “n” having 2 to 50 carbon atoms or an oxygen atom, “n” represents an integer of 1 to 10, and R.sub.1 independently represents any of the following general formulae (2), where in the general formulae (2), broken lines represent attachment points to X, and Q.sub.1 represents a monovalent organic group containing a carbonyl group, at least a part of which is a group shown by the following general formulae (3), where in the general formulae (3), broken lines represent attachment points, X.sub.1 represents a single bond or a divalent organic group having 1 to 20 carbon atoms optionally having a substituent when the organic group has an aromatic ring, R.sub.2 represents a hydrogen atom, a methyl group, an ethyl group, or a phenyl group, and ** represents an attachment point. An object of the present invention is to provide a material for forming an organic film for forming an organic film having dry etching resistance, and also having high filling and planarizing properties and adhesion to a substrate. ##STR00001##

In this work is presented a method for fabrication of high-aspect ratio structures through spalling effect. The spalling is achieved through lithography, etching and sputtering processes, thus providing the flexibility to position the spalled structures according to the application requirements. This method has been successfully demonstrated for metal-oxides and metals. The width of the fabricated structures is dependent on the thickness of the film deposited by sputtering, where structures as small as 20 nm in width have been obtained.

Disclosed are systems and methods for achieving sub-diffraction limit resolutions for fabrication of integrated circuits using multiphoton lithography. In one embodiment, a photolithography system is disclosed. The system includes a light source, which can generate and emit laser beams at various wavelengths; a reflector configured to receive the laser beams and focus the laser beams on a condensing lens; a scattering medium, configured to receive the laser beams and generate scattered laser beams; and a wave-front shaping module, configured to receive the scattered laser beams and generate a focused laser beam in a photoresist material deposited on a silicon wafer.

The present invention is a material for forming an organic film, including: a compound shown by the following general formula (1); and an organic solvent, where in the general formula (1), X represents an organic group with a valency of “n” having 2 to 50 carbon atoms or an oxygen atom, “n” represents an integer of 1 to 10, and R.sub.1 independently represents any of the following general formulae (2), where in the general formulae (2), broken lines represent attachment points to X, and Q.sub.1 represents a monovalent organic group containing a carbonyl group, at least a part of which is a group shown by the following general formulae (3), where in the general formulae (3), broken lines represent attachment points, X.sub.1 represents a single bond or a divalent organic group having 1 to 20 carbon atoms optionally having a substituent when the organic group has an aromatic ring, R.sub.2 represents a hydrogen atom, a methyl group, an ethyl group, or a phenyl group, and ** represents an attachment point. An object of the present invention is to provide a material for forming an organic film for forming an organic film having dry etching resistance, and also having high filling and planarizing properties and adhesion to a substrate.

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In accordance with some embodiments, a method for processing a semiconductor wafer is provided. The method includes transporting a carrier along with a reticle supported by the carrier in a lithography exposure apparatus. The method also includes regulating particles in the carrier through a magnetic field. In addition, the method includes removing the reticle from the carrier. The method further includes performing, using the reticle, a lithography exposure process to the semiconductor wafer in the lithography exposure apparatus.

In accordance with some embodiments, a method for processing a semiconductor wafer is provided. The method includes transporting a carrier along with a reticle supported by the carrier in a lithography exposure apparatus. The method also includes regulating particles in the carrier through a magnetic field. In addition, the method includes removing the reticle from the carrier. The method further includes performing, using the reticle, a lithography exposure process to the semiconductor wafer in the lithography exposure apparatus.

A method for forming a device includes forming a hole pattern in a resist layer disposed over a substrate. The substrate includes contact regions disposed over a major surface of the substrate and a dielectric layer disposed over the contact regions. The resist layer is disposed over the dielectric layer and the hole pattern includes through openings in the resist layer that are aligned with the contact regions. The through openings include a first through opening having a first critical dimension and a second through opening having a second critical dimension greater than the first critical dimension. The method includes modifying the hole pattern by depositing a material including silicon within the through openings by exposing the hole pattern to a first plasma generated from a gas mixture including SiCl.sub.4 and hydrogen, and then etching holes in the dielectric layer through the modified hole pattern, exposing the contact regions.