A method for processing semiconductor wafers includes obtaining measurement data from a surface of a semiconductor wafer processed by a front-end process tool. The method includes determining a center plane of the wafer based on the measurement data, generating raw shape profiles, and generating ideal shape profiles. The method further includes generating Gapi profiles based on the raw shape profiles and the ideal shape profiles, and calculating a Gapi value of the semiconductor wafer based on the Gapi profiles. The generated Gapi profiles and/or the calculated Gapi value may be used to tune the front-end process tool and/or sort the semiconductor wafer for polishing. Systems include at least a front-end process tool, a flatness measurement tool, and a computing device.

An integrated circuit includes first to n.sup.th metal layers vertically stacked on a substrate, and a test circuit outputting a test result signal according to a characteristic of each of the first to n.sup.th metal layers. The test circuit includes first to n.sup.th test circuits for generating a plurality of clock signals. Each clock signal of the plurality of clock signal has a frequency according to a characteristic of a corresponding metal layer among the first to n.sup.th metal layers, and n is a natural number.

The present invention provides a sensor mounted wafer, including: a lower case in which a mounting groove is formed; a circuit board on which a plurality of electronic components having different heights are mounted, and placed in the mounting groove; an upper case in which a plurality of insertion grooves having different depths are formed, and bonded together to the lower case so that the plurality of electronic components are inserted into the plurality of insertion grooves; and an adhesive layer placed between the mounting groove and the plurality of insertion grooves, in which the insertion grooves are formed to have different depths according to the heights of the plurality of the electronic components.

A method for processing semiconductor wafers includes obtaining measurement data of an edge profile of a semiconductor wafer processed by a front-end process tool. The method includes determining an edge profile center point based on the measurement data, generating a raw height profile, and generating an ideal edge profile. The method further includes generating a Gapi edge profile of the semiconductor wafer based on the raw height profile and the ideal edge profile and calculating a Gapi edge value of the semiconductor wafer based on the Gapi edge profile. The generated Gapi edge profile and/or the calculated Gapi edge value may be used to tune the front-end process tool and/or sort the semiconductor wafer for polishing. Systems include at least a front-end process tool, a flatness measurement tool, and a computing device.

A semiconductor process system includes a process chamber with a lid. The system includes a heater positioned on the lid and a controller configured to control the heater. The controller operates the heater to provide a selected temperature distribution of the lid.

Systems and methods are described for determining whether liquid remains on a wafer surface following a scanning operation. A system embodiment includes, but is not limited to, a first system configured for positioning adjacent a transfer line coupled with a scanning nozzle to dispense fluid onto a wafer surface and to recover the fluid from the wafer surface, the first system configured to detect a gas/liquid transition of the fluid and determine a volume of liquid sample dispensed; a second system configured for positioning adjacent a second line downstream from the scanning nozzle, the second system configured to detect a gas/liquid transition of fluid flowing through the second line and determine a volume of liquid sample recovered from the wafer surface; and a controller configured to generate an alert if the volume of liquid sample recovered is not within a threshold amount compared to the volume of liquid sample dispensed.

A method for manufacturing an electronic device is provided, the method includes: providing an inspection module to inspect a first area of the electronic device to obtain a first information and inspect a second area of the electronic device to obtain a second information; transmitting the first information and the second information to a processing system; comparing the first information and the second information to obtain a difference; and transmitting a correction information to a first process machine via a first interface system. When the difference is greater than or equal to -2 and less than or equal to 2, the first process machine is started to produce. An electronic device is also provided.

An electronic device is disclosed and includes a conductive layer, a first dielectric layer, and a second dielectric layer, in which the second dielectric layer is disposed on the first dielectric layer, the conductive layer is disposed between the first dielectric layer and the second dielectric layer, the first dielectric layer has a first transmittance for a light, the second dielectric layer has a second transmittance for the light, and the first transmittance is different from the second transmittance.

The embodiments of the present disclosure provide a semiconductor base plate and a test method thereof. When a first test line and a second test line in the semiconductor base plate are tested, a resistivity of the first test line can be tested by directly loading voltages to a first test pad and a second test pad after a first conductive layer is formed and before a first insulating layer is formed. After a second conductive layer is formed, a resistivity of the second test line is tested by loading voltages to a third test pad and a fourth test pad.

A semiconductor structure includes the following: a semiconductor substrate; a first metal layer, located on a surface of the semiconductor substrate; a second metal layer, located above a surface of the first metal layer; an insulating layer, located between the first metal layer and the second metal layer, and configured to isolate the first metal layer and the second metal layer; a test via, penetrating through the insulating layer and connecting the first metal layer with the second metal layer through a conductive material in the test via; and at least a pair of dummy vias, penetrating through the insulating layer and connected to any one of the first metal layer and the second metal layer.