A treatment liquid supply device and a wet treatment device with which an extremely small quantity of the treatment liquid can be accurately supplied, as a method for supplying a treatment liquid to an extremely small wafer of half inch size, including: a syringe that sucks and discharges the treatment liquid; a treatment liquid bottle that is filled with the treatment liquid; a suction hose that has one end connected to the treatment liquid bottle and the other end connected to the syringe, and sucks the treatment liquid inside the treatment liquid bottle to the syringe; a supply hose that has one end connected to an intermediate section of the suction hose and serves to supply, to the surface of the wafer, the treatment liquid discharged by the syringe; and a three-way solenoid valve that controls opening/closing of each of the suction and supply hoses.

An embodiment comprises: a guide moving in the vertical direction or the horizontal direction; a transfer arm provided on the guide and loading spaced apart wafers; a laser emission unit disposed on the guide and emitting first laser beams at the spaced apart wafers loaded on the transfer arm; and a laser detection unit disposed below the transfer arm and collecting, from among the first laser beams, second laser beams having passed through gaps between the spaced apart wafers.

In a substrate processing apparatus, a cup part is moved in an up-down direction to cause a cup exhaust port to selectively overlap a first chamber exhaust port or a second chamber exhaust port. In the state in which the cup exhaust port overlaps the first chamber exhaust port, gas in the cup part is discharged through the cup exhaust port and the first chamber exhaust port by a first exhaust mechanism. In the state in which the cup exhaust port overlaps the second chamber exhaust port, the gas in the cup part is discharged through the cup exhaust port and the second chamber exhaust port by a second exhaust mechanism. In this way, an exhaust mechanism for exhausting gas from the cup part can be easily switched between the first exhaust mechanism and the second exhaust mechanism.

Embodiments of a methods and cleaning systems for cleaning components for use in substrate processing equipment are provided herein. In some embodiments, a cleaning system includes a boiler having a heater configured to heat a fluid; a clean chamber fluidly coupled to the boiler via at least one of a gas line and a liquid line, wherein the clean chamber includes one or more fixtures in an interior volume therein for holding at least one component to be cleaned, and wherein the clean chamber includes a heater for heating the interior volume; and an expansion chamber fluidly coupled to the clean chamber via a release line for evacuating the clean chamber, wherein the release line includes a release valve to selectively open or close a flow path between the expansion chamber and the clean chamber, and wherein the expansion chamber includes a chiller and a vacuum port.

A liquid processing apparatus includes: a tank configured to store a processing liquid supplied from a processing liquid supply source; a circulation passage connected to the tank; a pump installed at the circulation passage; a plurality of liquid processors configured to perform liquid processing on a substrate; and a plurality of supply passages configured to supply the processing liquid to the plurality of liquid processors respectively, wherein the circulation passage includes a main passage portion provided with the pump, and a first branch passage portion and a second branch passage portion branching from the main passage portion, and the processing liquid flowing out from the tank passes through the main passage portion, then flows into the first branch passage portion and the second branch passage portion, and then returns to the tank through the first branch passage portion and the second branch passage portion.

The present disclosure relates to a fixture, the fixture is a fixture for a semiconductor etching machine, and the fixture includes: a support mechanism, configured to be arranged on an outer base of an electrostatic chuck of the semiconductor etching machine; a cleaning mechanism, being rotatably arranged on the support mechanism; and at least one cleaning unit, being arranged on the cleaning mechanism.

A substrate processing apparatus includes a chamber, a holding unit, a hydrophobizing agent nozzle, a first organic solvent nozzle, a second organic solvent nozzle, and an exhaust port. The chamber has a gastight space that is capable of accommodating the plurality of substrates. The holding unit lifts or lowers the plurality of substrates between a storage area where a liquid is stored in the gastight space and a drying area that is located above the storage area in the gastight space. The hydrophobizing agent nozzle supplies a vapor of a hydrophobizing agent to the drying area. The first organic solvent nozzle supplies an organic solvent from the drying area to the storage area. The second organic solvent nozzle supplies a vapor of an organic solvent to the drying area. The exhaust port discharges a gas in the gastight space.

The present disclosure provides a method of manufacturing a semiconductor structure and a semiconductor device etching equipment. The semiconductor structure manufacturing method includes: providing a semiconductor structure to be processed, putting the semiconductor structure to be processed in a processing chamber, wherein the semiconductor structure to be processed includes a substrate and target structures to be processed located on the substrate, and sidewalls of the target structures to be processed are covered with bromine-containing polymer layers; removing the bromine-containing polymer layers, and forming a semiconductor structure; and removing products resulting from a process of removing the bromine-containing polymer layers from the processing chamber.

A wafer processing apparatus is configured to process a wafer by supplying mist to a surface of the wafer. The wafer processing apparatus includes a furnace in which the wafer is disposed, a gas supplying device configured to supply gas into the furnace, a mist supplying device configured to supply the mist into the furnace, and a controller. The controller is configured to execute a processing step by controlling the gas supplying device and the mist supplying device to supply the gas and the mist into the furnace, respectively. The controller is further configured to control the mist supplying device to stop supplying the mist into the furnace while controlling the gas supplying device to keep supplying the gas into the furnace when the processing step ends.

A substrate processing apparatus includes a rotation driving device configured to rotate a rotary table holding a substrate; a processing liquid nozzle configured to supply a processing liquid onto a top surface of the substrate; an electric heater provided at a top plate and configured to heat the substrate through the top plate; an electronic component configured to perform a power feed to the electric heater and transmission/reception of a control signal for the electric heater; and a periphery cover body connected to a peripheral portion of the top plate to be rotated along with the top plate. An accommodation space in which the electronic component is accommodated is formed under the top plate. The accommodation space is surrounded by a surrounding structure including the top plate and the periphery cover body. A gap between the peripheral portion of the top plate and the periphery cover body is sealed.