An apparatus for forming a solder bump on a substrate including a supporter configured to support the substrate to be provided thereon, a housing surrounding the supporter, a cover defining a manufacturing space in combination with the housing and including an edge heating zone along a perimeter thereof, the manufacturing space surrounding the supporter, and an oxide remover supply nozzle configured to supply an oxide remover to the manufacturing space may be provided.

A plasma processing apparatus includes a stage having a placing surface on which a workpiece is accommodated; a heater provided in the stage and configured to adjust a temperature of the placing surface of the stage; and a controller. The controller is configured to control a supply power to the heater; measure the supply power in a transient state where the supply power to the heater increases and in a second steady state where the supply power to the heater is stable in an extinguished state of plasma; calculate a heat input amount and a heat resistance by performing a fitting on a calculation model that calculates the supply power in the transient state using the heat input amount from the plasma and the heat resistance between the workpiece and the heater as parameters; and calculate a temperature of the workpiece in the first steady state.

A method may include heating a substrate in a first chamber to a platen temperature, the heating comprising heating the substrate on a platen; measuring the platen temperature in the first chamber using a contact temperature measurement; transferring the substrate to a second chamber after the heating; and measuring a voltage decay after transferring the substrate to the second chamber, using an optical pyrometer to measure pyrometer voltage as a function of time.

Proposed are a part having a corrosion-resistant layer that minimizes peeling off and particle generation of a porous ceramic layer, a manufacturing process apparatus having the same, and a method of manufacturing the part.

Methods and apparatus to control zone temperatures in a solar cell production system are disclosed. An example furnace to fire photovoltaic cells includes: a plurality of zones comprising firing elements configured to fire a metallization layer of photovoltaic cells by heating the photovoltaic cells in the zones; one or more belts configured to transport photovoltaic cells through a sequence of the plurality of zones; a user interface comprising one or more input devices; and control circuitry configured to: control the firing elements for the plurality of zones; and modify a configuration of two or more of the plurality of zones based on input received via the input device.

There is provided a technique that includes a process chamber configured to process a substrate; a transfer chamber in communication with a lower portion of the process chamber, and configured to transfer the substrate to a substrate support disposed in the process chamber, and a heating chamber in communication with a lower portion of the transfer chamber, and configured to heat the substrate support and the substrate.

Provided is an apparatus for treating a substrate. The apparatus for treating the substrate includes a chamber having an inner space, a support unit configured to support the substrate in the inner space, a gas supply tube configured to supply a gas onto the substrate supported on the support unit, a gas exhaust tube configured to exhaust the gas from the inner space, and a gas block connected to the gas supply tube and the gas exhaust tube and provided above the chamber.

A multi-curing apparatus includes an actuator, a first chamber including a first energy source head, a second chamber including a second energy source head, a first driver including a first rotation transmission gear gear-engaged with the actuator, and a first driving gear gear-engaged with the first chamber. The apparatus further includes a second driver including a second rotation transmission gear gear-engaged with the actuator, and a second driving gear gear-engaged with the second chamber. The apparatus aligns a position of the first chamber with reference to a position of the second chamber while the first rotation transmission gear, the second rotation transmission gear, and the second driving gear are fixed.

A temperature correction information calculation device includes a model storage unit that stores a model for generating temperature correction information in which a temperature correction value is associated with a cumulative film thickness on an inner wall of a semiconductor manufacturing apparatus that forms a film on a processing target object by a heat treatment at a set temperature corrected according to the cumulative film thickness; a learning determination unit that determines whether or not to update the model when a film forming result by the heat treatment is obtained; a model learning unit that updates the model based on the film forming result when the learning determination unit determines to update the model; and a temperature correction information generation unit that generates the temperature correction information using the model updated by the model learning unit and corrects the set temperature by the temperature correction information.

According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including checking a leak from a process furnace before a substrate is processed. The checking includes: (a) measuring, by a partial pressure sensor provided at an exhaust pipe, an oxygen partial pressure value of a residual oxygen after the process furnace is vacuum-exhausted; (b) comparing the oxygen partial pressure value measured by the partial pressure sensor with a threshold value; and (c) when the oxygen partial pressure value is higher than the threshold value in (b), performing at least one among: purging the process furnace and evacuating the process furnace.