There is provided a processing apparatus including: a processing part including a plurality of process modules connected to each other in a first room, and a loader module provided in the first room and accommodating a carrier which receives a substrate processed by each of the plurality of process modules; and a plurality of pump units corresponding to the plurality of process modules, respectively, and arranged in a second room adjacent to the first room, wherein an installation area of the plurality of pump units is equal to or smaller than that of the processing part.

A heat treatment apparatus includes: a processing container configured to accommodate and process a plurality of substrates in multiple tiers under a reduced-pressure environment; a first heater configured to heat the plurality of substrates accommodated in the processing container; a plurality of gas supply pipes configured to supply a gas to positions having different heights in the processing container; and a second heater provided on a gas supply pipe that supplies a gas to a lowermost position among the plurality of gas supply pipes, and configured to heat the gas in the gas supply pipe.

A first ceramic member and a second ceramic member are joined together at a lower joining temperature while reducing the loss of bond strength. A method for producing a semiconductor production device component includes a step of providing a first ceramic member including an AlN-based material, a step of providing a second ceramic member including an AlN-based material, and a step of joining the first ceramic member and the second ceramic member to each other by thermally pressing the first ceramic member and the second ceramic member to each other via a joint agent including Eu.sub.2O.sub.3, Gd.sub.2O.sub.3 and Al.sub.2O.sub.3 disposed between the first ceramic member and the second ceramic member.

A thermal regulator for controlling temperature of a substantially circular stage comprising a plurality of first segments and a plurality of second segments in a radial direction and in a circumferential direction, each of the first segments and at least two adjacent second segments defining a set of segments, the thermal regulator includes heaters disposed in the first and second segments, respectively, thermal sensors disposed in the first segments, respectively, a controller configured to control the heaters in response to temperatures determined by the thermal sensors, and a segment switch to switch the second segments to be controlled in conjunction with the first segment in each set of segments.

There is provided a method for fabricating a vertically tapered spot-size converter on a substrate, comprising: growing a waveguide core on the substrate; coating the waveguide core with a photoresist layer; placing a photomask having patterns at a negative focus offset point with respect to the photoresist layer, the patterns being defined by openings in the photomask, each opening having a cross-section comprising a region of constant width and at least one region of non-constant width, the non-constant width reducing in a direction extending away from the region of constant width; transferring the patterns of the photomask to the photoresist layer; providing the waveguide core with a vertically tapered profile, the vertically tapered profile being provided by the patterns of the photomask; growing a cladding layer over the waveguide core; and patterning and etching the cladding layer and the waveguide core, thereby defining the vertically tapered spot-size converter.

This disclosure relates to a method (100) for passivating a semiconductor structure, comprising a semiconductor layer and an oxide layer on the semiconductor layer; a semiconductor structure; and a vacuum processing system. The method (100) comprises providing the semiconductor structure (110) in a vacuum chamber (310) and, while keeping the semiconductor structure in the vacuum chamber (120) throughout a refinement period with a duration of at least 25 s refining the oxide layer (130) by maintaining temperature (131) of the semiconductor structure within a refinement temperature range extending from 20° C., to 800° C., and maintaining total pressure (132) in the vacuum chamber below a maximum total pressure, of 1×10.sup.−3 mbar.

An apparatus for manufacturing a semiconductor device and a method of manufacturing the apparatus, the apparatus including a heater configured to heat a target, and a coating layer, the coating layer including a ternary material of transition metal(M)-aluminum(Al)-nitrogen(N) represented by the following Chemical Formula:

[Chemical Formula]

M.sub.xAl.sub.1−xN.sub.y,

wherein x and y satisfy the following relations: 0<x<1 and y≥1.

According to one aspect of the technique of the present disclosure, there is provided a temperature control method including: (a) controlling a current heater supply power such that a predicted temperature column calculated according to a prediction model stored in advance approaches a future target temperature column, wherein the future target temperature column is updated in accordance with a current temperature, a final target temperature and one of a temperature convergence ramp rate and a designated temperature convergence time.

In an example, a method includes depositing a first sidewall spacer layer over a substrate having a layer stack including alternating layers of a nanosheet and a sacrificial layer, and a dummy gate formed over the layer stack, the first sidewall spacer layer formed over the dummy gate. The method includes depositing a metal-containing liner over the first sidewall spacer layer; forming a first sidewall spacer along the dummy gate by anisotropically etching the metal-containing liner and the first sidewall spacer layer; performing an anisotropic etch back process to form a plurality of vertical recesses in the layer stack; laterally etching the layer stack and form a plurality of lateral recesses between adjacent nanosheets; depositing a second sidewall spacer layer to fill the plurality of lateral recesses; and etching a portion of the second sidewall spacer layer to expose tips of the nanosheet layers.

A substrate processing technology including: transferring a substrate to a process chamber and mounting the substrate on a substrate holder; heating the substrate with a heating device to perform predetermined substrate processing; determining the number of times of the predetermined substrate processing that has been performed that the predetermined substrate processing has been performed a preset number of times or more, determining whether it is necessary to adjust a mounting position at which the substrate is mounted on the substrate holder; and when it is determined that a mounting position adjustment is necessary, determining the mounting position by comparing the substrate temperature measured at the performing the predetermined substrate processing with a premeasured temperature of the substrate which corresponds to the mounting position and is stored in a memory.