Some implementations described herein include operating components in a lithography system at variable speeds to reduce, minimize, and/or prevent particle generation due to rubbing of or collision between contact parts of the components. In some implementations, a component in a path of transfer of a semiconductor substrate in the lithography system is operated at a relatively high movement speed through a first portion of an actuation operation, and is operated at a reduced movement speed (e.g., a movement speed that is less than the high movement speed) through a second portion of the actuation operation in which contact parts of the component are to interact. The reduced movement speed reduces the likelihood of particle generation and/or release from the contact parts when the contact parts interact, while the high movement speed provides a high semiconductor substrate throughput in the lithography system.

A molding device for producing a molded module. The molding device has one tool part and one further tool part, which together enclose a cavity. At least one of the tool parts has at least one dividing web arranged and configured to subdivide the cavity into at least a low-pressure sub-cavity and a high-pressure sub-cavity. The tool part has at least two feed channels, of which a low-pressure feed channel opens into the low-pressure sub-cavity and has a smaller cross-section at least over a longitudinal portion than a high-pressure feed channel opening into the high-pressure sub-cavity. The low-pressure feed channel is configured to become pressure-resistantly blocked through hardening of the molding compound once a predetermined time interval has elapsed or during the interval. The high-pressure feed channel is configured to conduct a molding pressure into the cavity for a longer time interval than the low-pressure feed channel.

A substrate processing apparatus includes: a processing container including a processing space capable of accommodating a substrate in a state where a surface of the substrate is wet by a liquid; a processing fluid supply that supplies a processing fluid in a supercritical state to the processing space toward the liquid; a first exhaust line connected to a first exhaust source; a second exhaust line connected to a second exhaust source and connected to the first exhaust line between the first exhaust source and the processing space; and a controller controlling the second exhaust pressure. The processing fluid in the supercritical state contacts the liquid to dry the substrate, and the controller makes the second exhaust pressure to be higher than the first exhaust pressure during a period in which the processing fluid supply stops supplying the processing fluid to the processing space.

An ink jet process is used to deposit a material layer to a desired thickness. Layout data is converted to per-cell grayscale values, each representing ink volume to be locally delivered. The grayscale values are used to generate a halftone pattern to deliver variable ink volume (and thickness) to the substrate. The halftoning provides for a relatively continuous layer (e.g., without unintended gaps or holes) while providing for variable volume and, thus, contributes to variable ink/material buildup to achieve desired thickness. The ink is jetted as liquid or aerosol that suspends material used to form the material layer, for example, an organic material used to form an encapsulation layer for a flat panel device. The deposited layer is then cured or otherwise finished to complete the process.

A resin molding apparatus including a release film feeder configured to feed a release film is provided. The release film feeder including a feeding roller around which the release film is wound, a gripper configured to grip an end portion of the release film fed from the feeding roller, a support table configured to support the release film fed by a horizontal movement of the gripper in an X direction, the support table configured to horizontally move at least one of in the X direction or in a Y direction perpendicular to the X direction, the X and Y directions defining a surface parallel to a surface of the support table, and a position detecting sensor on the support table and configured to detect position information of the release film may be provided.

The present disclosure provides a semiconductor structure having an air gap surrounding a lower portion of a bit line, and a manufacturing method of the semiconductor structure. The semiconductor structure includes a substrate; a bit line structure disposed over the substrate; a first dielectric layer, surrounding the bit line structure; a second dielectric layer, surrounding a lower portion of the first dielectric layer, wherein the second dielectric layer is separated from the first dielectric layer by a first air gap; and a third dielectric layer, surrounding an upper portion of the first dielectric layer and sealing the first air gap.

A substrate processing method includes: preparing a substrate having a metal film exposed on a surface of the substrate; and forming a film of an ionic self-association material on a surface of the metal film by supplying the ionic self-association material to the surface of the substrate, the ionic self-association material having fluidity with a hydrophilic group and a hydrophobic group.

A CVD reactor includes a gas-tight and evacuatable reactor housing and an inner housing arranged therein. The inner housing has means for the infeed of a process gas and means for holding a substrate for treatment in the inner housing by means of the process gases. The inner housing also has a loading opening which can be closed off by a sealing element of a closure element. In its closure position, the closure element bears with an encircling sealing zone against a counterpart sealing zone which encircles the loading opening on the outer side of the inner housing. The sealing element is fastened to a carrier as to be adjustable in terms of inclination and/or pivotally movable about at least one spatial axis (X, Y, Z) and/or so as to be elastically deflectable in the direction of one of the spatial axes (X, Y, Z).

An annealing system is provided that includes a chamber body that defines a chamber, a support to hold a workpiece and a robot to insert the workpiece into the chamber. The annealing system also includes a first gas supply to provide a hydrogen gas, a pressure source coupled to the chamber to raise a pressure in the chamber to at least 5 atmospheres, and a controller configured to cause the robot to transport a workpiece having a metal film thereon into the chamber, where the metal film contains fluorine on a surface or embedded within the metal film, to cause the first gas supply to supply the hydrogen gas to the chamber and form atomic hydrogen therein, and to cause the pressure source to raise a pressure in the chamber to at least 5 atmospheres while the workpiece is held on the support in the chamber.

A substrate processing apparatus of an embodiment includes a nozzle plate and a support configured to support a substrate at a predetermined distance from the nozzle plate with a first surface of the substrate facing the nozzle plate. A processing liquid supply unit is configured to supply a processing liquid to a second surface of the substrate that is opposite to the first surface. A first supply unit is configured to supply a first fluid from a first supply port in the nozzle plate. A second supply unit is configured to supply a second fluid from a second supply port closer to a outer edge of the nozzle plate than the first supply port.