A wafer processing method of the present invention includes mounting a wafer part on a chuck table, loading the wafer part on the chuck table, spraying, by a spray arm module, a first processing solution onto the wafer part to process the wafer part, spraying, by the spray arm module, a second processing solution onto the wafer part to process the wafer part, drying the wafer part on the chuck table, and unloading the wafer part from the chuck table.

The present disclosure relates to a semiconductor device manufacturing system. The semiconductor device manufacturing system can include a chamber and an ion source in the chamber. The ion source can include an outlet. The ion source can be configured to generate a particle beam. The semiconductor device manufacturing system can further include a grid structure proximate to the outlet of the ion source and configured to manipulate the particle beam. A first portion of the grid structure can be electrically insulated from a second portion of the grid structure.

Manufacturing equipment with which steps from processing to sealing of an organic compound film can be continuously performed is provided. The manufacturing equipment enables continuous processing of a patterning step of a light-emitting device and a light-receiving device and a step of sealing top and side surfaces of organic layers to prevent the top and side surfaces from being exposed to the air, which allows formation of the light-emitting device and the light-receiving device each of which has a minute structure, high luminous, and high reliability. This manufacturing equipment can be built in an in-line manufacturing system where apparatuses are arranged according to the order of process steps for the light-emitting device and the light-receiving device, resulting in high throughput manufacturing.

A semiconductor device manufacturing system is provided. In one embodiment, a load lock chamber of the semiconductor device manufacturing system comprises an internal cavity, a substrate carrier, configured to support and deliver a substrate and a cooling gas inlet module arranged in the internal cavity and adjacent to a first side of the internal cavity. The cooling gas inlet module is configured to discharge a gas toward a second side of the internal cavity to cool down the substrate supported and delivered by the substrate carrier, wherein the second side. The second side is opposite to the first side.

A film formation method includes (A) to (C) below. (A) Providing a substrate including, on a surface of the substrate, a first region in which a first material is exposed and a second region in which a second material different from the first material is exposed. (B) Supplying, to the surface of the substrate, vapor of a solution that contains a raw material of a self-assembled monolayer and a solvent by which the raw material is dissolved, and selectively forming a self-assembled monolayer in the first region. (C) Forming a desired target film in the second region by using the self-assembled monolayer formed in the first region.

According to one aspect of the present disclosure, a transfer device has a first holding part configured to contact an edge part of a substrate when holding the substrate, and a second holding part formed with an elastic member and configured to contact only a back surface of the substrate when holding the substrate.

Methods for making thin-films on semiconductor substrates, may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.

With respect to an accommodation container that accommodates a substrate-shaped sensor, the accommodation container includes a container body that has an opening, a support that is disposed inside the container body and configured to support the substrate-shaped sensor, a contact pin that is disposed inside the container body and configured to come into contact with a terminal portion of the substrate-shaped sensor, a driving mechanism that is disposed inside the container body and configured to drive the contact pin, a rotation shaft member that drives the driving mechanism from an outside of the container body, a jack that is disposed outside the container body and electrically connected to the contact pin, and a lid that is configured to close the opening of the container body.

Systems and methods may be used to produce coated components. Exemplary semiconductor chamber components may include an aluminum alloy comprising nickel and may be characterized by a surface. The surface may include a corrosion resistant coating. The corrosion resistant coating may include a conformal layer and a non-metal layer. The conformal layer may extend about the semiconductor chamber component. The non-metal oxide layer may extend over a surface of the conformal layer. The non-metal oxide layer may be characterized by an amorphous microstructure having a hardness of from about 300 HV to about 10,000 HV. The non-metal oxide layer may also be characterized by an sp.sup.2 to sp.sup.3 hybridization ratio of from about 0.01 to about 0.5 and a hydrogen content of from about 1 wt. % to about 35 wt. %.

A film formation method includes: preparing a substrate including, on its surface, a first region in which a first material is exposed and a second region in which a second material different from the first material is exposed; selectively forming a self-assembled monolayer in the first region, among the first region and the second region; and forming a desired target film in the second region, among the first region and the second region, by using the self-assembled monolayer formed in the first region, wherein the selectively forming the self-assembled monolayer includes: selectively forming the self-assembled monolayer in the first region by using a first processing liquid including a first raw material of the self-assembled monolayer; and modifying the self-assembled monolayer, by using a second processing liquid including a second raw material of the self-assembled monolayer at a concentration different from a concentration of the first processing liquid.