A system includes a robot configured to transfer either one of a substrate and an edge ring within a substrate processing system, a substrate aligner configured to adjust a rotational position of either one of the substrate or the edge ring relative to an end effector of the robot, and a carrier plate configured to support the edge ring. The robot is configured to retrieve the carrier plate with the end effector, retrieve the edge ring using the carrier plate supported on the end effector, and transfer the carrier plate and the edge ring to the substrate aligner.

A semiconductor process system includes a process chamber with a lid. The system includes a heater positioned on the lid and a controller configured to control the heater. The controller operates the heater to provide a selected temperature distribution of the lid.

Manufacturing equipment with which steps from processing to sealing of an organic compound film can be continuously performed is provided. The manufacturing equipment enables continuous processing of a patterning step of a light-emitting device and a light-receiving device and a step of sealing top and side surfaces of organic layers to prevent the top and side surfaces from being exposed to the air, which allows formation of the light-emitting device and the light-receiving device each of which has a minute structure, high luminous, and high reliability. This manufacturing equipment can be built in an in-line manufacturing system where apparatuses are arranged according to the order of process steps for the light-emitting device and the light-receiving device, resulting in high throughput manufacturing.

A substrate rotating apparatus may include a spin chuck supporting a substrate and a stage rotating the spin chuck about an axis parallel to a first direction. The spin chuck may include a first magnetic element and a substrate supporting member thereon. The stage may include a stage housing, a rotating part rotating about the axis, an inner control unit controlling rotation of the rotating part, a power supplying part supplying a power to the rotating part, and a wireless communication part receiving a control signal from an outside and transmitting the control signal to the inner control unit. The rotating part may include a second magnetic element spaced apart from the first magnetic element and a rotation driver rotating the second magnetic element. The rotating part, the inner control unit, the power supplying part, and the wireless communication part may be placed in the stage housing.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber providing a treating space; and a fluid supply unit supplying a treating fluid to the chamber, and wherein the fluid supply unit includes: a supply tank storing the treating fluid; a supply line connecting the supply tank and the chamber; and a plurality of valves installed at the supply line, and wherein any one valve among the plurality of valves is provided as a safety valve, and wherein the safety valve is opened after confirming that the chamber has been switched to a closed state when supplying the treating fluid from a tank to the chamber.

Apparatus and methods for lifting loads are described. The load lift includes a support frame and a lift assembly with main cylinder and at least one standby cylinder connecting a rotatable cross beam with a clamp plate. A rotary actuator assembly is connected to the lift beam to move the lift assembly out of the way while not in use by rotating the lift assembly from a lift position to a standby position.

There is provided a processing apparatus including: a processing part including a plurality of process modules connected to each other in a first room, and a loader module provided in the first room and accommodating a carrier which receives a substrate processed by each of the plurality of process modules; and a plurality of pump units corresponding to the plurality of process modules, respectively, and arranged in a second room adjacent to the first room, wherein an installation area of the plurality of pump units is equal to or smaller than that of the processing part.

An etching method is provided. In the etching method, a protective film-forming gas including an amine gas is supplied to a substrate having a surface on which a first film and a second film are formed, the first film and the second film having respective properties of being etched by an etching gas, and a protective film is formed to cover the first film such that the first film is selectively protected between the first film and the second film when the etching gas is supplied. Further, the second film is selectively etched by supplying the etching gas to the substrate after the protective film is formed.

A film formation method includes (A) to (C) below. (A) Providing a substrate including, on a surface of the substrate, a first region in which a first material is exposed and a second region in which a second material different from the first material is exposed. (B) Supplying, to the surface of the substrate, vapor of a solution that contains a raw material of a self-assembled monolayer and a solvent by which the raw material is dissolved, and selectively forming a self-assembled monolayer in the first region. (C) Forming a desired target film in the second region by using the self-assembled monolayer formed in the first region.

A semiconductor apparatus and a method for collecting residues of curable material are provided. The semiconductor apparatus includes a chamber containing a wafer cassette, and a collecting module disposed in the chamber for collecting residues of curable material in the chamber. The collecting module includes a flow-directing structure disposed below a ceiling of the chamber, a baffle structure disposed below the flow-directing structure, and a tray disposed on the wafer cassette. The flow-directing structure includes a first hollow region, the baffle structure includes a second hollow region, and the tray is moved together with the wafer cassette to pass through the second hollow region of the baffle structure and is positioned to cover the first hollow region of the flow-directing structure.