A dispensing system includes a dispense material supply that contains a dispense material and a dispensing pump connected downstream from the dispense material supply. The dispensing pump includes a body made of a first electrically conductive material, one or more first electrical contacts that are disposed on the body of the dispensing pump, and one or more first connection wires that are coupled between each one of the one or more first electrical contacts and ground. The dispensing system also includes a dispensing nozzle connected downstream from the dispensing pump and includes a tube made of a second electrically conductive material, one or more second electrical contacts that are disposed on an outer surface of the tube, and one or more second connection wires that are coupled between each one of the one or more second electrical contacts and the ground.

Some implementations described herein include operating components in a lithography system at variable speeds to reduce, minimize, and/or prevent particle generation due to rubbing of or collision between contact parts of the components. In some implementations, a component in a path of transfer of a semiconductor substrate in the lithography system is operated at a relatively high movement speed through a first portion of an actuation operation, and is operated at a reduced movement speed (e.g., a movement speed that is less than the high movement speed) through a second portion of the actuation operation in which contact parts of the component are to interact. The reduced movement speed reduces the likelihood of particle generation and/or release from the contact parts when the contact parts interact, while the high movement speed provides a high semiconductor substrate throughput in the lithography system.

Manufacturing equipment with which steps from processing to sealing of an organic compound film can be continuously performed is provided. The manufacturing equipment enables continuous processing of a patterning step of a light-emitting device and a light-receiving device and a step of sealing top and side surfaces of organic layers to prevent the top and side surfaces from being exposed to the air, which allows formation of the light-emitting device and the light-receiving device each of which has a minute structure, high luminous, and high reliability. This manufacturing equipment can be built in an in-line manufacturing system where apparatuses are arranged according to the order of process steps for the light-emitting device and the light-receiving device, resulting in high throughput manufacturing.

A method of operating an apparatus for laser annealing, includes reducing temporal or spatial coherency of a plurality of laser beams by beam superimposing; and reducing an electric field inner product magnitude of beams having the reduced temporal or spatial coherency by a fly eye lens array to reduce coherency, and/or by modifying a polarization state between the beams by beam superimposing.

Methods for making thin-films on semiconductor substrates, may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.

Provided is an apparatus for treating a substrate. The apparatus for treating a substrate may include: a liquid treating chamber configured to liquid-treat a substrate; and a controller configured to control the liquid treating chamber, and the liquid treating chamber may include a treating container having a treating space therein; a support unit configured to support and rotate the substrate in the treating space; a liquid supply unit configured to supply a liquid onto the substrate; and an elevation unit configured to adjust a relative height between the treating container and the support unit, and the controller may control the elevation unit so as to adjust the relative height between the treating container and the support unit according to a warpage state of the substrate supported on the support unit when conducting substrate treating by supplying the liquid onto the substrate while rotating the substrate.

Exemplary substrate support assemblies may include a chuck body defining a substrate support surface. The substrate support surface may define a plurality of protrusions that extend upward from the substrate support surface. The substrate support surface may define an annular groove and/or ridge. A subset of the plurality of protrusions may be disposed within the annular groove and/or ridge. The substrate support assemblies may include a support stem coupled with the chuck body.

A film forming method includes: preparing a substrate that includes a base substrate and a first conductive film that is formed on the base substrate; forming, on the first conductive film, a composite layer that includes layers of graphene and includes, as dopant atoms, a transition metal from 4th period to 6th period in a periodic table, excluding lanthanoids, between the layers of graphene; and forming, on the composite layer, a second conductive film which is electrically connected to the first conductive film via the composite layer.

A photolithography apparatus includes a cleaning unit which cleans a target substrate, a drying unit which dries the target substrate provided from the cleaning unit, and a coating unit which forms a photoresist layer by coating a photoresist on the target substrate provided from the drying unit. The drying unit includes a first vacuum unit which performs a vacuum treatment on the target substrate.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing defining a treating space; a chuck supporting a substrate at the treating space and providing a bottom electrode for generating a plasma at the treating space; a top electrode; and an ion blocker positioned between the top electrode and the treating space.