Patent classifications
H01L21/67288
PROCESSING DEVICE AND METHOD
A processing device and method for safely processing a wafer having bumps formed on a surface thereof. A processing device is provided with: a chuck capable of holding a bump region of a wafer; a support ring having a support surface for supporting a bend region which extends from the bump region to an outer peripheral region and in which a film is bent, the support ring capable of supporting the outer peripheral region of the wafer; and a chuck table in which the chuck is housed substantially centrally and the support ring is housed around the chuck.
Single Cell In-Die Metrology Targets and Measurement Methods
Metrology targets and methods are provided, which comprise at least two overlapping structures configured to be measurable in a mutually exclusive manner at least at two different corresponding optical conditions. The targets may be single cell targets which are measured at different optical conditions which enable independent measurements of the different layers of the target. Accordingly, the targets may be designed to be very small, and be located in-die for providing accurate metrology measured of complex devices.
METHODS AND APPARATUS FOR ADJUSTING SURFACE TOPOGRAPHY OF A SUBSTRATE SUPPORT APPARATUS
Systems, method and related apparatuses for adjusting support elements of a support apparatus to approximate a surface profile of a wafer. The support apparatus may include a group of mutually lateral adjacent support elements, each mutually lateral adjacent support element is configured to independently move at least vertically and comprising an upper surface. The support apparatus may further include a thermal energy transfer device operably coupled to each of the mutually lateral support elements, and an actuator system operably coupled to each of the support elements to selectively move one or more of the mutually lateral support elements vertically.
Method for inspecting a container and inspection system
The present disclosure relates to a method for inspecting a container body adapted and configured to hold substrates, comprising the steps of directing light from a light source onto a reflector element positioned within an interior space of the container body, such that the light is reflected to illuminate at least one interior surface of the container body, wherein the light is reflected by the reflector element in a diffuse manner and generating at least one image of the at least one interior surface by means of at least one camera, and evaluating the state of the container body on the basis of the at least one image.
System and method for monitoring chemical mechanical polishing
An apparatus for chemical mechanical polishing of a wafer includes a process chamber and a rotatable platen disposed inside the process chamber. A polishing pad is disposed on the platen and a wafer carrier is disposed on the platen. A slurry supply port is configured to supply slurry on the platen. A process controller is configured to control operation of the apparatus. A set of microphones is disposed inside the process chamber. The set of microphones is arranged to detect sound in the process chamber during operation of the apparatus and transmit an electrical signal corresponding to the detected sound. A signal processor is configured to receive the electrical signal from the set of microphones, process the electrical signal to enable detection of an event during operation of the apparatus, and in response to detecting the event, transmit a feedback signal to the process controller. The process controller is further configured to receive the feedback signal and initiate an action based on the received feedback signal.
Substrate processing apparatus and method of opening/closing lid of substrate accommodating vessel
A substrate processing apparatus includes: a substrate processing part including a load port configured to place thereon a substrate accommodating vessel in which at least one substrate is accommodated, and configured to take out the at least one substrate from the substrate accommodating vessel and to perform a series of processes on the at least one substrate; and a controller configured to control an opening and closing of a lid of the substrate accommodating vessel, wherein the controller performs control to open the lid after the substrate accommodating vessel is placed on the load port, and the controller performs control to close the lid when an abnormality occurs in the substrate processing part and when none of the at least one substrate removed from the substrate accommodating vessel can be recovered to the substrate accommodating vessel after a predetermined period of time from the occurrence of the abnormality.
Wafer cassette packing apparatus
The present invention provides an apparatus for packing wafer cassettes, the apparatus including: a loading part to which a wafer cassette is loaded; an accessory inspecting part configured to check a recipe attached to the wafer cassette and inspect accessories of the wafer cassette; a first label attaching part configured to attach a first label to the wafer cassette on which the accessory inspection has been completed; a primary film packing part configured to receive a primary film according to the recipe and pack the wafer cassette using the primary film; a secondary film packing part configured to receive a secondary film according to the recipe and secondarily pack the wafer cassette using the secondary film; a second label attaching part configured to attach a second label to the secondary film with which the wafer cassette has been packed; and an unloading part configured to discharge the wafer cassette which has been completely packaged.
Wafer backside engineering for wafer stress control
A semiconductor structure and a method for managing semiconductor wafer stress are disclosed. The semiconductor structure includes a semiconductor wafer, a first stress layer disposed on and in contact with a backside of the semiconductor wafer, and a second stress layer on and in contact with the first stress layer. The first stress layer exerts a first stress on the semiconductor wafer and the second layer exerts a second stress on the semiconductor wafer that is opposite the first backside stress. The method includes forming a first stress layer on and in contact with a backside of a semiconductor wafer, and further forming a second stress layer on and in contact with the first stress layer. The first stress layer exerts a first stress on the semiconductor wafer and the second stress layer exerts a second stress on the semiconductor wafer that is opposite to the first stress.
Differential height measurement using interstitial mirror plate
An apparatus and method are provided. The apparatus includes an imaging device; a stage movable relative to the imaging device; an isolation plate provided between the imaging device and the stage, including a horizontal glass plate; and a plurality of interferometers in electronic communication with a processor. The plurality of interferometers include three interferometers disposed on the imaging device, configured to direct a first beam set in a first direction toward the horizontal glass plate; and three interferometers disposed on the stage, configured to direct a second beam set in a second direction toward the horizontal glass plate, the second direction being opposite to the first direction. The processor is configured to measure distances between the imaging device and the isolation plate and distances between the stage and the isolation plate based on the first beam set and the second beam set reflected from the horizontal glass plate.
REFINING DEFECT DETECTION USING PROCESS WINDOW
An optical inspection is performed to detect potential defects within integrated circuit devices and a first electron-based inspection of less than all of the potential defects is performed to identify primary actual defects. A process window of manufacturing parameter settings used to manufacture the integrated circuit devices is identified and the integrated circuit devices manufactured using the manufacturing parameter settings inside the process window have less than a threshold number of the primary actual defects. To identify additional actual defects a second electron-based inspection is performed that is limited to selected ones of the potential defects in the integrated circuit devices that were manufactured using the manufacturing parameter settings inside the process window but were uninspected in the first electron-based inspection.