A semiconductor apparatus and a method for collecting residues of curable material are provided. The semiconductor apparatus includes a chamber containing a wafer cassette, and a collecting module disposed in the chamber for collecting residues of curable material in the chamber. The collecting module includes a flow-directing structure disposed below a ceiling of the chamber, a baffle structure disposed below the flow-directing structure, and a tray disposed on the wafer cassette. The flow-directing structure includes a first hollow region, the baffle structure includes a second hollow region, and the tray is moved together with the wafer cassette to pass through the second hollow region of the baffle structure and is positioned to cover the first hollow region of the flow-directing structure.

The present disclosure relates to a method for inspecting a container body adapted and configured to hold substrates, comprising the steps of directing light from a light source onto a reflector element positioned within an interior space of the container body, such that the light is reflected to illuminate at least one interior surface of the container body, wherein the light is reflected by the reflector element in a diffuse manner and generating at least one image of the at least one interior surface by means of at least one camera, and evaluating the state of the container body on the basis of the at least one image.

A tray elevator of a test handler includes a tray mounter on which a test tray is seated and having a support part and a through hole vertically penetrating the support part, a shaft vertically extending through the through hole of the tray mounter and configured to provide a path for elevating or lowering the tray mounter, a guide bushing including an outer surface and a groove at the outer surface, inserted into the through hole of the tray mounter, and configured to move along the shaft, and a ring inserted into the groove of the guide bushing.

The present application relates to a base frame of a substrate carrier, including a first vertical rod and a second vertical rod; a plurality of cross rods, being arranged along the lengthwise direction of the first vertical rod and the second vertical rod, and being connected between the first vertical rod and the second vertical rod; a first vertical rod extension, being connected to an end of the first vertical rod from which a substrate enters; and a second vertical rod extension, being connected to an end of the second vertical rod from which the substrate enters; and the first vertical rod extension and the second vertical rod extension are configured to accommodate at least one set of rollers for conveying the substrate therebetween.

The present disclosure provides a technique that includes: loading a substrate into a process chamber in which the substrate is processed; and processing the substrate by supplying a first inert gas to a peripheral portion of the substrate and simultaneously supplying a mixed gas of a second inert gas different from the first inert gas and a process gas to a surface of the substrate.

Provided is processing of a substrate including: forming film on substrate by performing cycle, multiple times, including non-simultaneously performing: (a) supplying precursor gas and inert gas to the substrate; and (b) supplying reaction gas to the substrate. In (a), at least one of the precursor and inert gas stored in first tank is supplied to the substrate, and at least one of the precursor and inert gas stored in second tank is supplied to the substrate. A concentration of the precursor gas in the first tank differs from that in the second tank. Further, in (a), the at least one of the precursor and inert gas is supplied from the first tank to the substrate, and the at least one of the precursor and inert gas is supplied from the second tank to the substrate to suppress multiple adsorption of molecules constituting the precursor gas on the substrate's surface.

A plasma processing apparatus includes: a processing container having a cylindrical shape; a pair of plasma electrodes arranged along the longitudinal direction of the processing container while facing each other; and a radio-frequency power supply configured to supply a radio-frequency power to the pair of plasma electrodes. In the pair of plasma electrodes, an inter-electrode distance at a position distant from a power feed position to which the radio-frequency power is supplied is longer than an inter-electrode distance at the power feed position.

A semiconductor processing apparatus includes an outer tube, an inner tube in the outer tube and providing a process space, and a nozzle between the outer tube and the inner tube. The nozzle provides an internal passage. The inner tube provides a slit. The nozzle provides a plurality of holes. The plurality of holes are vertically spaced apart from each other. The slit vertically extends to expose at least two of the plurality of holes. The internal passage is connected to the process space through the slit and the plurality of holes.

Provided is a technique including: a processing chamber that processes a substrate; a first gas supplier that supplies a metal-containing gas into the processing chamber; a second gas supplier that supplies a first oxygen-containing gas into the processing chamber; and an exhauster including a gas exhaust pipe and a trap that collects a component of the metal-containing gas contained in an exhaust gas using plasma, the exhauster discharging the exhaust gas from the processing chamber.

Provided is a silica glass disc in which the deformation amount thereof in heat treatment is minimized, and the surface area of a silica glass surface can be increased. There is provided a silica glass disc, including a dimple forming area in which a large number of dimples are formed on at least one of a front surface or a back surface of a silica glass body, and the dimples in the dimple forming area are regularly formed. It is preferred that the dimples be formed by a laser.