A wafer processing method of the present invention includes mounting a wafer part on a chuck table, loading a ring cover unit on the chuck table to restrain the wafer part to the chuck table, spraying, by a spray suction arm module, a processing solution onto the wafer part and suctioning, by the spray suction arm module, foreign materials from the processing solution, unloading the ring cover unit from the chuck table, and spraying, by a spray arm module, a cleaning solution onto the wafer part to clean the wafer part.

A substrate debonding apparatus includes a chuck attached to a second surface opposite to the first surface of the semiconductor substrate via a second adhesive layer. The chuck is configured to support a lower portion of a base film having a cross-sectional area in a horizontal direction greater than a cross-sectional area of the semiconductor substrate in the horizontal direction. The semiconductor debonding apparatus further includes a fixing ring arranged above the chuck and configured to fix in position an edge portion of the base film, and a cover ring arranged above the fixing ring and configured to adjust a diameter of an opening exposing the carrier substrate. The cover ring includes a guide frame arranged above the fixing ring, and a plurality of cover blades configured to move in a horizontal direction determined by the guide frame.

According to one aspect of the present disclosure, a transfer device has a first holding part configured to contact an edge part of a substrate when holding the substrate, and a second holding part formed with an elastic member and configured to contact only a back surface of the substrate when holding the substrate.

An exclusion ring for semiconductor wafer processing includes an outer circumferential segment having a first thickness and an inner circumferential segment having a second thickness, with the first thickness being greater than the second thickness. The top surface of an inner circumferential segment and the top surface of the outer circumferential segment define a common top surface for the exclusion ring. A plurality of flow paths is formed within the outer circumferential segment, with each of the flow paths extending radially through the plurality of flow paths provides for exhaust of a wafer edge gas from the pocket where a wafer has an edge thereof disposed below part of the inner circumferential portion. The exhausting of the wafer edge gas from the pocket prevents up-and-down movement of the exclusion ring when bowed wafers are processed.

A conveying device, a conveying method, and an evaporation apparatus are provided. The conveying device comprises a carrying mechanism for carrying a substrate; and a fastening mechanism for fastening the substrate on the carrying mechanism in a mechanical manner. In the conveying device, the substrate is fastened on the carrying mechanism in a mechanical manner by the fastening mechanism. As compared with electrostatic fastening and adhesive fastening, this reduces damage to the substrate, increases the reliability for fastening the substrate, and makes it easy to receive and detach the substrate. (FIG. 1)

Embodiments of substrate carriers and method of making the same are provided herein. In some embodiments, a substrate carrier includes a substantially planar body; and a plurality of holding elements arranged on a surface of the substantially planar body, wherein the plurality of holding elements are configured to hold a plurality of substrates on the surface of the substantially planar body, and wherein the plurality of holding elements includes at least three holding elements disposed around a corresponding position of each of the plurality of substrates.

Carrier rings with radially-varied plasma impedance are provided herein. In some embodiments, a carrier ring may include an outer ring that holds a removable inner ring. The outer ring may be formed of a dielectric material such as ceramic. The inner ring may be formed of a metal such as aluminum to provide a desired impedance. In some other embodiments, a carrier ring is formed from a single piece with radially-varying impedances.

The present disclosure relates to heating a substrate in a rapid thermal processing (RTP) chamber. The chamber may contain a rotatable assembly configured to accommodate and rotate the substrate while a heat source inside the RTP chamber applies heat to the substrate. The rotatable assembly is partially disposed outside the RTP chamber. A seal may formed around the rotatable assembly and maintain a vacuum inside the RTP chamber while the rotatable assembly rotates. The rotatable assembly may configured to accommodate various-sized substrates.

An apparatus includes a substrate holder, a first actuator to rotate the substrate holder, a second actuator to move the substrate holder linearly, a first sensor to generate one or more first measurements or images of the substrate, a second sensor to generate one or more second measurements of target positions on the substrate, and a processing device. The processing device estimates a position of the substrate on the substrate holder and causes the first actuator to rotate the substrate holder about a first axis. The rotation causes an offset between a field of view of the second sensor and a target position on the substrate due to the substrate not being centered on the substrate holder. The processing device causes the second actuator to move the substrate holder linearly along a second axis to correct the offset. The processing device determines a profile across a surface of the substrate based on the one or more second measurements of the target positions.

A system for assembling fields from a source substrate onto a second substrate. The source substrate includes fields. The system further includes a transfer chuck that is used to pick at least four of the fields from the source substrate in parallel to be transferred to the second substrate, where the relative positions of the at least four of the fields is predetermined.