Methods for etching a semiconductor structure and for conditioning a processing reactor in which a single semiconductor structure is treated are disclosed. An engineered polycrystalline silicon surface layer is deposited on a susceptor which supports the semiconductor structure. The polycrystalline silicon surface layer may be engineered by controlling the temperature at which the layer is deposited, by grooving the polycrystalline silicon surface layer or by controlling the thickness of the polycrystalline silicon surface layer.

The present invention relates to a component for manufacturing a semiconductor manufactured by using a CVD method. A SiC structure formed by the CVD method according to one aspect of the present invention is used such that the SiC structure is exposed to plasma inside a chamber, wherein the SiC structure comprises a crystal grain structure in which the length in a first direction is longer than the length in a second direction when defining a direction perpendicular to the surface most exposed to the plasma as the first direction and a direction horizontal to the surface most exposed to the plasma as the second direction.

A baseplate of a substrate support assembly for supporting a semiconductor substrate in a processing chamber comprises a first component made of a first material including a metal and a nonmetal. The first material has a first coefficient of thermal expansion. A layer coating the first component is made of a second material. The second material has a second coefficient of thermal expansion. The first and second coefficients of thermal expansion are different.

A ceramic joined body (1) includes: a pair of ceramic plates (2,3) that include a conductive material; a conductive layer (4) and an insulating layer (5) that are interposed between the pair of ceramic plates (2, 3); and a pair of intermediate layers (6, 7) that are interposed between the pair of ceramic plates (2, 3) and the conductive layer (4) and are in contact with the pair of ceramic plates (2, 3) and the conductive layer (4).

Susceptor assemblies comprising a susceptor base and a plurality of pie-shaped skins thereon are described. A pie anchor can be positioned in the center of the susceptor base to hold the pie-shaped skins in place during processing.

Chucks for supporting semiconductor wafers during certain processing operations are disclosed. The chucks may include a recessed region near the outer perimeter of the wafer that has one or more surfaces that face towards the wafer but are recessed therefrom so as to not contact the wafer around the perimeter of the wafer. The use of such a recessed region prevents direct thermally conductive contact between the chuck and the wafer, thereby allowing the wafer to achieve a more uniform temperature distribution in certain process conditions. This has the further effect of causing certain processing operations to be more uniform with respect to edge-center deposition (or etch) layer thickness.

A carrier substrate includes a base layer having a first surface, and having a second surface that is parallel to and opposite of the first surface. The carrier substrate further includes a glass layer bonded to the first surface of the base layer. The carrier substrate has a Young's modulus greater than or equal to 150 GPa. A carrier substrate includes a polycrystalline ceramic and has a Young's modulus greater than or equal to 150 GPa. The carrier substrate has a coefficient of thermal expansion of greater than or equal to 20×10.sup.−7/° C. to less than or equal to 120×10.sup.−7/° C. over a range from 25° C. to 500° C.

Disclosed herein are glass-based articles having a first surface having an edge, wherein a maximum optical retardation of the first surface is at the edge and the maximum optical retardation is less than or equal to about 40 nm and wherein the optical retardation decreases from the edge toward a central region of the first surface, the central region having a boundary defined by a distance from the edge toward a center point of the first surface, wherein the distance is ½ of the shortest distance from the edge to the center point.

Embodiments of substrate carriers and method of making the same are provided herein. In some embodiments, a substrate carrier includes a substantially planar body; and a plurality of holding elements arranged on a surface of the substantially planar body, wherein the plurality of holding elements are configured to hold a plurality of substrates on the surface of the substantially planar body, and wherein the plurality of holding elements includes at least three holding elements disposed around a corresponding position of each of the plurality of substrates.

Substrate tables and methods of manufacturing substrate supports for substrate tables. In one arrangement, a plurality of holes are formed through a base member. A burl formation member is joined to the base member. A plurality of burl structures are formed in the burl formation member. Each burl structure includes a distal surface that contacts, in use, a substrate being supported. Each burl structure has an opening to at least one of the holes formed through the base member.