A semiconductor substrate processing apparatus is provided with a reaction chamber; a heater to heat the reaction chamber; and a substrate support assembly. The substrate support assembly comprising: a substrate support defining an outer support surface for supporting a substrate or substrate carrier in the reaction chamber; and a base assembly including a door for sealing the reaction chamber of the apparatus. The substrate support being connected to the base assembly through a bearing that facilitates rotation of the substrate support. The substrate support assembly is provided with a temperature sensor to measure the temperature of the bearing.

A substrate processing apparatus includes a holder configured to hold a substrate; a driving unit configured to rotate the holder; an inner cup body provided in the holder to surround the substrate held by the holder; a mist guard, surrounding the holder and the inner cup body, configured to be moved up and down; a cleaning liquid supply configured to supply a cleaning liquid; and a controller. The controller is configured to perform: supplying a processing liquid to the substrate from a processing liquid supply, in a state that the substrate is held by the holder and the mist guard is raised; and dispersing, after the supplying of the processing liquid, the cleaning liquid supplied from the cleaning liquid supply to an entire inner peripheral surface of the mist guard, in a state that the substrate is carried out from the holder and the mist guard is raised.

A substrate positioning apparatus includes a holder and a rotating device. The holder is configured to hold a substrate. The rotating device is configured to rotate the holder. The rotating device includes a rotation shaft, a bearing member, a base member, a driving unit and a damping device. The rotation shaft is fixed to the holder. The bearing member is configured to support the rotation shaft in a non-contact state. The bearing member is fixed on the base member. The driving unit is configured to rotate the rotation shaft. The damping device includes a rail connected to the base member and a slider connected to the rotation shaft, and is configured to produce a damping force against a relative operation between the rotation shaft and the base member by a resistance generated between the rail and the slider.

The present invention relates to a susceptor including a substrate including a carbon material and having one main surface on which a silicon water is to be placed, and another main surface facing the one main surface, in which an entire surface of the substrate is covered with a thin film including silicon carbide, the one main surface has an emissivity variation of 3% or less, and a ratio of an average emissivity between the one main surface and the another main surface facing the one main surface is from 1:1 to 1:0.8.

The present disclosure provides a shielding mechanism and a thin-film-deposition equipment using the same, wherein the shielding mechanism includes two shield members and a driver. The driver includes a motor and a shaft seal. The motor interconnects the two shield members via the shaft seal, and such that to drive the two shield members to sway in opposite directions and to switch between an open state and a shielding state. Furthermore, each of the two shield members is formed with at least one cavity, for reducing weights thereof and loading of the motor and the driver.

A substrate processing apparatus is disclosed. An exemplary substrate processing apparatus includes a reaction chamber; a susceptor plate positioned within the reaction chamber, constructed and arranged to support a substrate, and provided with one or more holes; a substrate lift mechanism comprising: a plurality of lift pins to support the substrate; and a lift pin support member to move the lift pins; in a vertical direction through the one or more holes; a substrate transfer robot provided with one or more robotic arms to transfer the substrate to a position above the lift pins; and a gas supply unit constructed and arranged to face the susceptor plate; wherein the gas supply unit is constructed and arranged to move in the vertical direction thereby positioning the gas supply unit in a processing position in the reaction chamber.

Embodiments of gas distribution modules for use with rapid thermal processing (RTP) systems and methods of use thereof are provided herein. In some embodiments, a gas distribution module for use with a RTP chamber includes: a first carrier gas line and a first liquid line fluidly coupled to a mixer, the mixer having one or more control valves configured to mix a carrier gas from the first carrier gas line and a liquid from the first liquid line in a desired ratio to form a first mixture; a vaporizer coupled to the mixer and configured to receive the first mixture in a hollow internal volume, the vaporizer having a heater configured to vaporize the first mixture; and a first gas delivery line disposed between the vaporizer and the RTP chamber to deliver the vaporized first mixture to the RTP chamber.

A gas heating apparatus includes a heating element having a flat plate shape, a heat-resistant enclosure in which a space having a flat plate shape is provided, the heating element being disposed in the space with a gap provided between the heating element and the heat-resistant enclosure, a gas inlet joint connected to the heat-resistant enclosure to allow gas to flow into the space, a gas outlet joint connected to the heat-resistant enclosure to allow the gas that has passed through the space to flow out, and an induction coil disposed in parallel with the heating element on a lower surface of the heat-resistant enclosure, the induction coil inductively heating the heating element on the basis of electric power supplied.

A method and apparatus for aligning components within a processing module are described herein. The components include a substrate transfer device, a plurality of support chuck assemblies, and adjustable bushings disposed in the processing module. The substrate transfer device includes support arms with heads configured to passively correct the location of a substrate therein. The orientation of each of the support arms of the substrate transfer device is adjusted to align with each of the support chuck assemblies. The location of a process station is then adjusted to align with one of the support chuck assemblies by calibrating the adjustable bushings which correspond to each process station.

A substrate processing device according to an embodiment of the present invention includes a disk part disposed in a chamber in which a heating means is provided, and a pocket part installed on one surface of the disk part and on which a substrate is seated. A heat hole through which heat generated by the heating means passes may be formed on an installation surface of the disk part on which the pocket part is installed, or a gear hole through which the heat of the heating means passes may be formed in a pocket gear facing the disk part.