A substrate bonding apparatus includes a substrate susceptor to support a first substrate, a substrate holder over the substrate susceptor to hold a second substrate, the substrate holder including a plurality of independently moveable holding fingers, and a chamber housing to accommodate the substrate susceptor and the substrate holder.

The present disclosure relates to a support ring for a thermal processing chamber. The support ring has a polysilicon coating. The polysilicon coating is formed using a plasma spray deposition process.

A substrate bonding apparatus includes a substrate susceptor to support a first substrate, a substrate holder over the substrate susceptor to hold a second substrate, the substrate holder including a plurality of independently moveable holding fingers, and a chamber housing to accommodate the substrate susceptor and the substrate holder.

A support ring for semiconductor processing is provided. The support ring includes a ring shaped body defined by an inner edge and an outer edge. The inner edge and outer edge are concentric about a central axis. The ring shaped body further includes a first side, a second side, and a raised annular shoulder extending from the first side of the ring shaped body at the inner edge. The support ring also includes a coating on the first side. The coating has an inner region of reduced thickness region abutting the raised annular shoulder.

The present disclosure relates to a support ring for a thermal processing chamber. The support ring has a polysilicon coating. The polysilicon coating is formed using a plasma spray deposition process.

A plasma processing system. The system may include a vacuum chamber including an electron emission region and a processing region, in which plasma is produced and a substrate is loaded, the electron emission region having a first pressure and the processing region being maintained to a pressure higher than the first pressure, a thermal electron emission unit provided in the electron emission region and used to emit a thermal electron, a grid electrode grounded and used to selectively provide an electron emitted from the thermal electron emission unit to the processing region, a substrate holder provided in a lower region of the vacuum chamber and in the processing region, the substrate holder being used to load the substrate thereon, and an RF power source configured to apply an RF power to the substrate holder and to produce the plasma.

Embodiments of the present disclosure include a semiconductor device and methods of forming a semiconductor device. An embodiment is a method of forming a semiconductor device, the method including bonding a die to a top surface of a first substrate, the die being electrically coupled to the first substrate, and forming a support structure on the top surface of the first substrate, the support structure being physically separated from the die with a top surface of the support structure being coplanar with a top surface of the die. The method further includes performing a sawing process on the first substrate, the sawing process sawing through the support structure.

Embodiments of the present disclosure include a semiconductor device and methods of forming a semiconductor device. An embodiment is a method of forming a semiconductor device, the method including bonding a die to a top surface of a first substrate, the die being electrically coupled to the first substrate, and forming a support structure on the top surface of the first substrate, the support structure being physically separated from the die with a top surface of the support structure being coplanar with a top surface of the die. The method further includes performing a sawing process on the first substrate, the sawing process sawing through the support structure.

Provided is a wafer container including a frame having a first sidewall and a second sidewall extending along a YZ plane; a plurality of first support structures disposed on the first sidewall and arranged along a Z direction; and a plurality of second support structures disposed on the second sidewall and arranged along the Z direction. One of the plurality of first support structures is horizontally aligned with a corresponding second support structure to constitute a wafer holder. The wafer holder includes a plurality of island structures to hold a wafer in a XY plane, and the plurality of island structures are separated to each other along a X direction. A method for holding at least one wafer is also provided.

A substrate support for control of a temperature of a semiconductor substrate supported thereon during plasma processing of the semiconductor substrate includes a temperature-controlled base having a top surface, a metal plate, and a film heater. The film heater is a thin and flexible polyimide heater film with a plurality of independently controlled resistive heating elements thermally coupled to an underside of the metal plate. The film heater is electrically insulated from the metal plate. A first layer of adhesive bonds the metal plate and the film heater to the top surface of the temperature-controlled base. A layer of dielectric material is bonded to a top surface of the metal plate with a second layer of adhesive. The layer of dielectric material forms an electrostatic clamping mechanism for supporting the semiconductor substrate.