An electrical component including a substrate, a first dielectric layer on the substrate, a redistribution layer pad on the first dielectric layer, and a component interconnection element on the redistribution layer pad so that the component interconnection element fills an opening in the second dielectric layer. The opening includes at least one protrusion between the component interconnection element solder ball metallization and the redistribution layer pad.

A semiconductor structure includes: a substrate, a conductive pattern layer, a support layer and a re-distribution layer. The conductive pattern layer is arranged on the substrate. The support layer covers the conductive pattern layer and is provided with a via hole. The re-distribution layer is arranged on the support, and the re-distribution layer includes a test pad at least located in the via hole. The test pad includes a plurality of test contact portions and a plurality of recesses that are arranged alternately and connected mutually, and the recess is in corresponding contact with a portion of the conductive pattern layer in the via hole.

A distribution layer structure and a manufacturing method thereof, and a bond pad structure are provided. The distribution layer structure includes a dielectric layer and a wire layer embedded in the dielectric layer. The wire layer includes a frame and a connection line, the frame has at least two openings and is divided into a plurality of segments by the at least two openings. The connection line is located in the frame and has a plurality of connecting ends connected to the frame. The connection line divides an interior of the frame into a plurality of areas, with each segment connected to one of the connecting ends, and each area connected to one of the openings. This structure provides improved binding force between the wire layer and the dielectric layer without increasing a resistance of a wire connecting with a top bond pad.

Semiconductor devices having metallization structures including crack-inhibiting structures, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor device includes a metallization structure formed over a semiconductor substrate. The metallization structure can include a bond pad electrically coupled to the semiconductor substrate via one or more layers of conductive material, and an insulating material—such as a low-κ dielectric material—at least partially around the conductive material. The metallization structure can further include a crack-inhibiting structure positioned beneath the bond pad between the bond pad and the semiconductor substrate. The crack-inhibiting structure can include (a) a metal lattice extending laterally between the bond pad and the semiconductor substrate and (b) barrier members extending vertically between the metal lattice and the bond pad.

Semiconductor devices having metallization structures including crack-inhibiting structures, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor device includes a metallization structure formed over a semiconductor substrate. The metallization structure can include a bond pad electrically coupled to the semiconductor substrate via one or more layers of conductive material, and an insulating material—such as a low-κ dielectric material—at least partially around the conductive material. The metallization structure can further include a crack-inhibiting structure positioned beneath the bond pad between the bond pad and the semiconductor substrate. The crack-inhibiting structure can include a barrier member extending vertically from the bond pad toward the semiconductor substrate and configured to inhibit crack propagation through the insulating material.

The present disclosure provides a redistribution layer (RDL) structure, a semiconductor device and manufacturing method thereof. The semiconductor device comprising an RDL structure that may include a substrate, a first conductive layer, a reinforcement layer and, and a second conductive layer. The first conductive layer may be formed on the substrate and has a first bond pad area. The reinforcement layer may be formed on a surface of the first conductive layer facing away from the substrate and located in the first bond pad area. The second conductive layer may be formed on the reinforcement layer and an area of the first conductive layer not covered by the reinforcement layer. The reinforcement layer has a material strength greater than those of the first conductive layer and the second conductive layer.

A semiconductor device and method of manufacturing is provided, whereby a support structure is utilized to provide additional support for a conductive element in order to eliminate or reduce the formation of a defective surface such that the conductive element may be formed to have a thinner structure without suffering deleterious structures.

Provided is a semiconductor device including a substrate, a pad, a protective layer, a plurality of convex patterns, a redistribution layer (RDL), and a bump. The pad is disposed on the substrate. The protective layer is disposed on the substrate. The protective layer has a first opening exposing a portion of a surface of the pad. The convex patterns are disposed on the protective layer. The RDL is disposed on the convex patterns. The RDL extends from the pad to the convex patterns. The bump is disposed on the convex patterns.

A method of manufacturing a package structure is provided. The method of manufacturing a package structure comprises receiving a first semiconductor structure and a second semiconductor structure; forming an isolation layer on each semiconductor structure; forming at least one supporting structure and at least one pad trench in the isolation layer; filling the pad trench with electrically conductive material; plariarizing the isolation layer and the electrically conductive material to form bonding pads in a bonding layer on each semiconductor structure; and bonding the semiconductor structures.

A chip package includes a first substrate; a first insulation layer disposed over the first substrate; a conductive structure disposed within the first insulation layer; a buffering member embedded into the first insulation layer; a redistribution layer (RDL) electrically connected with the conductive structure and disposed over the conductive structure and the buffering member; and a second insulation layer disposed over the RDL, wherein a portion of the RDL is exposed from the second insulation layer and disposed over the buffering member.